Page 1100 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL3714STRL
Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,720
NTLUS3A90PZCTBG
ON Semiconductor

MOSFET P-CH 20V 4A UDFN6

Package: 6-PowerUFDFN

Stock2,368
SI4646DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock63,000
FDA62N28
Fairchild/ON Semiconductor

MOSFET N-CH 280V 62A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,144
FQI4N20LTU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.8A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,136
STS30N3LLH6
STMicroelectronics

MOSFET N-CH 30V 30A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,624
SFT1452-TL-W
ON Semiconductor

MOSFET N-CH 250V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,096
DMG1012TQ-7
Diodes Incorporated

MOSFET NCH 20V 630MA SOT523

Package: SOT-523

Stock6,560
IRL3803VSPBF
Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,568
STD3NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 2.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock639,432
STF11NM50N
STMicroelectronics

MOSFET N-CH 500V 8.5A TO-220FP

Package: TO-220-3 Full Pack

Stock482,364
CSD17313Q2T
Texas Instruments

MOSFET N-CH 30V 5A

Package: 6-WDFN Exposed Pad

Stock4,928
STP27N3LH5
STMicroelectronics

MOSFET N-CH 30V 27A TO220

Package: TO-220-3

Stock120,720
FCH104N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 37A TO247

Package: TO-247-3

Stock104,304
FDMC86520DC
Fairchild/ON Semiconductor

MOSFET N CH 60V 17A POWER33

Package: 8-PowerTDFN

Stock7,104
FDMS0306AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 26A PT8

Package: 8-PowerTDFN

Stock88,752
AOK2500L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: TO-247-3

Stock6,528
IRFP048NPBF
Infineon Technologies

MOSFET N-CH 55V 64A TO-247AC

Package: TO-247-3

Stock71,244
NVMFS040N10MCLT1G
onsemi

PTNG 100V LL SO8FL

Package: -

Stock12,114
G160P03KI
Goford Semiconductor

P-30V,-30A,RD(MAX)<16M@-10V,VTH-

Package: -

Stock14,100

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3714STRL	Infineon Technologies	MOSFET N-CH 20V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,720	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	3V @ 250µA	9.7nC @ 4.5V	670pF @ 10V	±20V	-	47W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTLUS3A90PZCTBG	ON Semiconductor	MOSFET P-CH 20V 4A UDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock2,368	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.5V, 4.5V	1V @ 250µA	12.3nC @ 4.5V	950pF @ 10V	±8V	-	600mW (Ta)	62 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
SI4646DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 12A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock63,000	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.5V @ 1mA	45nC @ 10V	1790pF @ 15V	±20V	-	3W (Ta), 6.25W (Tc)	11.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDA62N28	Fairchild/ON Semiconductor	MOSFET N-CH 280V 62A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 280V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,144	MOSFET (Metal Oxide)	280V	62A (Tc)	10V	5V @ 250µA	100nC @ 10V	4630pF @ 25V	±30V	-	500W (Tc)	51 mOhm @ 31A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
FQI4N20LTU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.8A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,136	MOSFET (Metal Oxide)	200V	3.8A (Tc)	5V, 10V	2V @ 250µA	5.2nC @ 5V	310pF @ 25V	±20V	-	3.13W (Ta), 45W (Tc)	1.35 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STS30N3LLH6	STMicroelectronics	MOSFET N-CH 30V 30A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,624	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	1V @ 250µA	40nC @ 4.5V	4040pF @ 25V	±20V	-	2.7W (Tc)	2.4 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SFT1452-TL-W	ON Semiconductor	MOSFET N-CH 250V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK/TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,096	MOSFET (Metal Oxide)	250V	3A (Ta)	10V	4.5V @ 1mA	4.2nC @ 10V	210pF @ 20V	±30V	-	1W (Ta), 26W (Tc)	2.4 Ohm @ 1.5A, 10V	150°C (TJ)	Surface Mount	DPAK/TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
DMG1012TQ-7	Diodes Incorporated	MOSFET NCH 20V 630MA SOT523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 280mW (Ta) Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: SOT-523	Stock6,560	MOSFET (Metal Oxide)	20V	630mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.74nC @ 4.5V	60.67pF @ 16V	±6V	-	280mW (Ta)	400 mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
IRL3803VSPBF	Infineon Technologies	MOSFET N-CH 30V 140A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	1V @ 250µA	76nC @ 4.5V	3720pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	5.5 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD3NK50ZT4	STMicroelectronics	MOSFET N-CH 500V 2.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock639,432	MOSFET (Metal Oxide)	500V	2.3A (Tc)	10V	4.5V @ 50µA	15nC @ 10V	280pF @ 25V	±30V	-	45W (Tc)	3.3 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STF11NM50N	STMicroelectronics	MOSFET N-CH 500V 8.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 470 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock482,364	MOSFET (Metal Oxide)	500V	8.5A (Tc)	10V	4V @ 250µA	19nC @ 10V	547pF @ 50V	±25V	-	25W (Tc)	470 mOhm @ 4.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
CSD17313Q2T	Texas Instruments	MOSFET N-CH 30V 5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 17W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WSON (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock4,928	MOSFET (Metal Oxide)	30V	5A (Ta)	3V, 8V	1.8V @ 250µA	2.7nC @ 4.5V	340pF @ 15V	+10V, -8V	-	2.4W (Ta), 17W (Tc)	30 mOhm @ 4A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad
STP27N3LH5	STMicroelectronics	MOSFET N-CH 30V 27A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock120,720	MOSFET (Metal Oxide)	30V	27A (Tc)	4.5V, 10V	2.5V @ 250µA	4.6nC @ 5V	475pF @ 25V	±22V	-	45W (Tc)	20 mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FCH104N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 37A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4165pF @ 380V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock104,304	MOSFET (Metal Oxide)	600V	37A (Tc)	10V	3.5V @ 250µA	82nC @ 10V	4165pF @ 380V	±20V	-	357W (Tc)	104 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FDMC86520DC	Fairchild/ON Semiconductor	MOSFET N CH 60V 17A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2790pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool ? 33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,104	MOSFET (Metal Oxide)	60V	17A (Ta), 40A (Tc)	8V, 10V	4.5V @ 250µA	40nC @ 10V	2790pF @ 30V	±20V	-	3W (Ta), 73W (Tc)	6.3 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Dual Cool ? 33	8-PowerTDFN
FDMS0306AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 26A PT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 59W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock88,752	MOSFET (Metal Oxide)	30V	26A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	57nC @ 10V	3550pF @ 15V	±20V	-	2.5W (Ta), 59W (Tc)	2.4 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
AOK2500L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 500W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,528	MOSFET (Metal Oxide)	150V	14A (Ta), 180A (Tc)	6V, 10V	3.5V @ 250µA	136nC @ 10V	6460pF @ 75V	±20V	-	3.1W (Ta), 500W (Tc)	6.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IRFP048NPBF	Infineon Technologies	MOSFET N-CH 55V 64A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock71,244	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 250µA	89nC @ 10V	1900pF @ 25V	±20V	-	140W (Tc)	16 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
NVMFS040N10MCLT1G	onsemi	PTNG 100V LL SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock12,114	MOSFET (Metal Oxide)	100 V	6.5A (Ta), 21A (Tc)	4.5V, 10V	3V @ 26µA	8.3 nC @ 10 V	500 pF @ 50 V	±20V	-	3.5W (Ta), 36W (Tc)	38mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
G160P03KI	Goford Semiconductor	P-30V,-30A,RD(MAX)<16M@-10V,VTH- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1811 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,100	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	31.2 nC @ 10 V	1811 pF @ 15 V	±20V	-	60W (Tc)	16mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJMF280N65E1_T0_00001	Panjit International Inc.	650V SUPER JUNCITON MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35.7W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock5,994	MOSFET (Metal Oxide)	650 V	13.8A (Tc)	10V	4V @ 250µA	30 nC @ 10 V	1040 pF @ 400 V	±30V	-	35.7W (Tc)	280mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
PMV100EPAR	Nexperia USA Inc.	MOSFET P-CH 60V 2.2A TO236AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 616 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 710mW (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock45,297	MOSFET (Metal Oxide)	60 V	2.2A (Ta)	4.5V, 10V	3.2V @ 250µA	17 nC @ 10 V	616 pF @ 30 V	±20V	-	710mW (Ta), 8.3W (Tc)	130mOhm @ 2.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
IXFA14N60P-TRL	IXYS	MOSFET N-CH 600V 14A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	14A (Tc)	10V	5.5V @ 2.5mA	36 nC @ 10 V	2500 pF @ 25 V	±30V	-	300W (Tc)	550mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVMFS5C466NWFT1G	onsemi	MOSFET N-CH 40V 15A/49A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	15A (Ta), 49A (Tc)	10V	3.5V @ 250µA	10 nC @ 10 V	625 pF @ 25 V	±20V	-	3.5W (Ta), 37W (Tc)	8.1mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IPB034N06N3GATMA2	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4V @ 93µA	130 nC @ 10 V	11000 pF @ 30 V	±20V	-	167W (Tc)	3.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
NP32N055HLE-AZ	NEC Corporation	32A, 55V, 0.033OHM, N-CHANNEL , FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 66W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-251 (MP-3) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	32A (Ta)	4.5V, 10V	2.5V @ 250µA	41 nC @ 10 V	2000 pF @ 25 V	±20V	-	1.2W (Ta), 66W (Tc)	24mOhm @ 16A, 10V	175°C	Through Hole	TO-251 (MP-3)	TO-251-3 Short Leads, IPak, TO-251AA
SICW280N120A-BP	Micro Commercial Co	SCHOTTKY DIODES FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 16V, 20V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 1000 V Vgs (Max): +22V, -5V FET Feature: - Power Dissipation (Max): 97W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	10A (Tc)	16V, 20V	3V @ 1mA	26 nC @ 18 V	357 pF @ 1000 V	+22V, -5V	-	97W (Tc)	330mOhm @ 5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AB	TO-247-3
PJF4NA65A_T0_00001	Panjit International Inc.	650V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	4A (Ta)	10V	4V @ 250µA	18 nC @ 10 V	555 pF @ 25 V	±30V	-	33W (Tc)	2.7Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB	TO-220-3 Full Pack