Page 1109 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSC029N025S G
Infineon Technologies

MOSFET N-CH 25V 100A TDSON-8

Package: 8-PowerTDFN

Stock3,728
SPP16N50C3HKSA1
Infineon Technologies

MOSFET N-CH 560V 16A TO-220AB

Package: TO-220-3

Stock3,872
IXFR32N50
IXYS

MOSFET N-CH ISOPLUS247

Package: -

Stock6,608
GP2M005A050FG
Global Power Technologies Group

MOSFET N-CH 500V 4.5A TO220F

Package: TO-220-3 Full Pack

Stock3,024
IXTC130N15T
IXYS

MOSFET N-CH 150V ISOPLUS220

Package: ISOPLUS220?

Stock5,968
FDU8780_F071
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,848
FDPF3860TYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock57,600
FDMS8690
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A POWER56

Package: 8-PowerWDFN

Stock487,404
IRFBE20S
Vishay Siliconix

MOSFET N-CH 800V 1.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,984
STF5NK52ZD
STMicroelectronics

MOSFET N-CH 520V 4.4A TO-220FP

Package: TO-220-3 Full Pack

Stock7,856
IRF3007SPBF
Infineon Technologies

MOSFET N-CH 75V 62A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,928
IXTY48P05T
IXYS

MOSFET P-CH 50V 48A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,168
IRFS7434TRL7PP
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock5,200
BSO203SP H
Infineon Technologies

MOSFET P-CH 20V 7A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,584
IRFI4110GPBF
Infineon Technologies

MOSFET N-CH 100V 72A TO220AB

Package: TO-220-3 Full Pack

Stock17,118
IRLR8721TRPBF
Infineon Technologies

MOSFET N-CH 30V 65A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock23,046
NTD4809NT4G
ON Semiconductor

MOSFET N-CH 30V 9.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock559,428
DMN10H170SVT-7
Diodes Incorporated

MOSFET N-CH 100V 2.6A TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock29,604
PSMN2R0-30YL,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock295,206
GSFB0206
Good-Ark Semiconductor

MOSFET, N-CH, 5.2A, 20V, D

Package: -

Stock18,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSC029N025S G	Infineon Technologies	MOSFET N-CH 25V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,728	MOSFET (Metal Oxide)	25V	24A (Ta), 100A (Tc)	4.5V, 10V	2V @ 80µA	41nC @ 5V	5090pF @ 15V	±20V	-	2.8W (Ta), 78W (Tc)	2.9 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
SPP16N50C3HKSA1	Infineon Technologies	MOSFET N-CH 560V 16A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,872	MOSFET (Metal Oxide)	560V	16A (Tc)	10V	3.9V @ 675µA	66nC @ 10V	1600pF @ 25V	±20V	-	160W (Tc)	280 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IXFR32N50	IXYS	MOSFET N-CH ISOPLUS247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,608	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GP2M005A050FG	Global Power Technologies Group	MOSFET N-CH 500V 4.5A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 32.9W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,024	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	5V @ 250µA	15nC @ 10V	645pF @ 25V	±30V	-	32.9W (Tc)	1.5 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IXTC130N15T	IXYS	MOSFET N-CH 150V ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,968	MOSFET (Metal Oxide)	150V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS220?	ISOPLUS220?
FDU8780_F071	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,848	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	29nC @ 10V	1440pF @ 13V	±20V	-	50W (Tc)	8.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
FDPF3860TYDTU	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 38.2 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock57,600	MOSFET (Metal Oxide)	100V	20A (Tc)	10V	4.5V @ 250µA	35nC @ 10V	1800pF @ 25V	±20V	-	33.8W (Tc)	38.2 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
FDMS8690	Fairchild/ON Semiconductor	MOSFET N-CH 30V 14A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37.8W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock487,404	MOSFET (Metal Oxide)	30V	14A (Ta), 27A (Tc)	4.5V, 10V	3V @ 250µA	27nC @ 10V	1680pF @ 15V	±20V	-	2.5W (Ta), 37.8W (Tc)	9 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerWDFN
IRFBE20S	Vishay Siliconix	MOSFET N-CH 800V 1.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,984	MOSFET (Metal Oxide)	800V	1.8A (Tc)	10V	4V @ 250µA	38nC @ 10V	530pF @ 25V	±20V	-	-	6.5 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF5NK52ZD	STMicroelectronics	MOSFET N-CH 520V 4.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 520V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 16.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,856	MOSFET (Metal Oxide)	520V	4.4A (Tc)	10V	4.5V @ 50µA	16.9nC @ 10V	529pF @ 25V	±30V	-	25W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IRF3007SPBF	Infineon Technologies	MOSFET N-CH 75V 62A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 48A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,928	MOSFET (Metal Oxide)	75V	62A (Tc)	10V	4V @ 250µA	130nC @ 10V	3270pF @ 25V	±20V	-	120W (Tc)	12.6 mOhm @ 48A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTY48P05T	IXYS	MOSFET P-CH 50V 48A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,168	MOSFET (Metal Oxide)	50V	48A (Tc)	10V	4.5V @ 250µA	53nC @ 10V	3660pF @ 25V	±15V	-	150W (Tc)	30 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS7434TRL7PP	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 315nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock5,200	MOSFET (Metal Oxide)	40V	240A (Tc)	6V, 10V	3.9V @ 250µA	315nC @ 10V	10250pF @ 25V	±20V	-	245W (Tc)	1 mOhm @ 100A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-7, D2Pak (6 Leads + Tab)
BSO203SP H	Infineon Technologies	MOSFET P-CH 20V 7A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,584	MOSFET (Metal Oxide)	20V	7A (Ta)	2.5V, 4.5V	1.2V @ 100µA	39nC @ 4.5V	3750pF @ 15V	±12V	-	1.6W (Ta)	21 mOhm @ 8.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	P-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRFI4110GPBF	Infineon Technologies	MOSFET N-CH 100V 72A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock17,118	MOSFET (Metal Oxide)	100V	72A (Tc)	10V	4V @ 250µA	290nC @ 10V	9540pF @ 50V	±20V	-	61W (Tc)	4.5 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
IRLR8721TRPBF	Infineon Technologies	MOSFET N-CH 30V 65A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock23,046	MOSFET (Metal Oxide)	30V	65A (Tc)	4.5V, 10V	2.35V @ 25µA	13nC @ 4.5V	1030pF @ 15V	±20V	-	65W (Tc)	8.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4809NT4G	ON Semiconductor	MOSFET N-CH 30V 9.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock559,428	MOSFET (Metal Oxide)	30V	9.6A (Ta), 58A (Tc)	4.5V, 11.5V	2.5V @ 250µA	25nC @ 11.5V	1456pF @ 12V	±20V	-	1.4W (Ta), 52W (Tc)	9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN10H170SVT-7	Diodes Incorporated	MOSFET N-CH 100V 2.6A TSOT26 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock29,604	MOSFET (Metal Oxide)	100V	2.6A (Ta)	4.5V, 10V	3V @ 250µA	9.7nC @ 10V	1167pF @ 25V	±20V	-	1.2W (Ta)	160 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
PSMN2R0-30YL,115	Nexperia USA Inc.	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 97W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock295,206	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	2.15V @ 1mA	64nC @ 10V	3980pF @ 12V	±20V	-	97W (Tc)	2 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
GSFB0206	Good-Ark Semiconductor	MOSFET, N-CH, 5.2A, 20V, D FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock18,000	MOSFET (Metal Oxide)	20 V	5A (Tc)	1.8V, 4.5V	1V @ 250µA	9 nC @ 4.5 V	460 pF @ 15 V	±10V	-	1.56W (Tc)	40mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDB86360_SN00307	onsemi	MOSFET N-CH 80V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	110A (Tc)	10V	4.5V @ 250µA	253 nC @ 10 V	14600 pF @ 25 V	±20V	-	333W (Tc)	1.8mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AON6582	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 5X6 DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP2110U-7-ML	MOSLEADER	P 20V 3.5A SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMT3009UFVW-13	Diodes Incorporated	MOSFET N-CH 30V 10.6A/30A PWRDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10.6A (Ta), 30A (Tc)	4.5V, 10V	1.8V @ 250µA	7.4 nC @ 10 V	894 pF @ 15 V	±12V	-	1.2W (Ta), 2.6W (Tc)	11mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
CWDM305P-TR13-PBFREE	Central Semiconductor Corp	MOSFET P-CH 30V 5.3A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V Vgs (Max): 16V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.3A (Ta)	5V, 10V	3V @ 250µA	7 nC @ 5 V	590 pF @ 10 V	16V	-	2W (Ta)	72mOhm @ 2.7A, 10V	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NVB190N65S3F	onsemi	MOSFET N-CH 650V 20A D2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,256	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	5V @ 430µA	34 nC @ 10 V	1605 pF @ 400 V	±30V	-	162W (Tc)	190mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G25N06K	Goford Semiconductor	N60V, 25A,RD<27M@10V,VTH1.0V~2.5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,940	MOSFET (Metal Oxide)	60 V	25A (Tc)	10V	2.5V @ 250µA	25 nC @ 10 V	970 pF @ 30 V	±20V	-	45W (Tc)	27mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
STWA48N60DM2	STMicroelectronics	MOSFET N-CH 600V 40A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Long Leads Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	5V @ 250µA	70 nC @ 10 V	3250 pF @ 100 V	±25V	-	300W (Tc)	79mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3