Page 1106 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD50R500CEATMA1
Infineon Technologies

MOSFET N-CH 500V 7.6A PG-TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,496
IRL5602SPBF
Infineon Technologies

MOSFET P-CH 20V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,660
PMZB300XN,315
Nexperia USA Inc.

MOSFET N-CH 20V 1A 3DFN

Package: 3-XFDFN

Stock3,536
NTD70N03RT4G
ON Semiconductor

MOSFET N-CH 25V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock204,468
IRL540L
Vishay Siliconix

MOSFET N-CH 100V 28A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,936
IRF9Z24STRL
Vishay Siliconix

MOSFET P-CH 60V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,696
AUIRF6215
Infineon Technologies

MOSFET P-CH 150V 13A TO220AB

Package: TO-220-3

Stock10,068
IRLR3717PBF
Infineon Technologies

MOSFET N-CH 20V 120A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,096
IXTK150N15P
IXYS

MOSFET N-CH 150V 150A TO-264

Package: TO-264-3, TO-264AA

Stock2,208
PCFQ5P10W
Fairchild/Micross Components

DIE MOSFET P-CH 100V

Package: Die

Stock5,888
DMT3008LFDF-13
Diodes Incorporated

MOSFET N-CH 30V 12A

Package: 6-UDFN Exposed Pad

Stock5,888
TSM240N03CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-236-3, SC-59, SOT-23-3

Stock4,656
IPI024N06N3GXKSA1
Infineon Technologies

MOSFET N-CH 60V 120A

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock10,128
NDB6060L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 48A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,972
IRF9640SPBF
Vishay Siliconix

MOSFET P-CH 200V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,836
AOD2N60A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,872
2N7002-G
Microchip Technology

MOSFET N-CH 60V 0.115A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock360,000
AUIRFS8409-7P
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock12,522
RZF030P01TL
Rohm Semiconductor

MOSFET P-CH 12V 3A TUMT3

Package: 3-SMD, Flat Leads

Stock457,776
IXTX40P50P
IXYS

MOSFET P-CH 500V 40A PLUS247

Package: TO-247-3

Stock6,312

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD50R500CEATMA1	Infineon Technologies	MOSFET N-CH 500V 7.6A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,496	MOSFET (Metal Oxide)	500V	7.6A (Tc)	13V	3.5V @ 200µA	18.7nC @ 10V	433pF @ 100V	±20V	-	57W (Tc)	500 mOhm @ 2.3A, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL5602SPBF	Infineon Technologies	MOSFET P-CH 20V 24A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,660	MOSFET (Metal Oxide)	20V	24A (Tc)	2.5V, 4.5V	1V @ 250µA	44nC @ 4.5V	1460pF @ 15V	±8V	-	75W (Tc)	42 mOhm @ 12A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMZB300XN,315	Nexperia USA Inc.	MOSFET N-CH 20V 1A 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.94nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 20V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006B (0.6x1) Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock3,536	MOSFET (Metal Oxide)	20V	1A (Ta)	2.5V, 4.5V	1.5V @ 250µA	0.94nC @ 4.5V	51pF @ 20V	±12V	-	360mW (Ta), 2.7W (Tc)	380 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006B (0.6x1)	3-XFDFN
NTD70N03RT4G	ON Semiconductor	MOSFET N-CH 25V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock204,468	MOSFET (Metal Oxide)	25V	10A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	13.2nC @ 5V	1333pF @ 20V	±20V	-	1.36W (Ta), 62.5W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IRL540L	Vishay Siliconix	MOSFET N-CH 100V 28A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,936	MOSFET (Metal Oxide)	100V	28A (Tc)	4V, 5V	-	64nC @ 5V	2200pF @ 25V	±10V	-	-	77 mOhm @ 17A, 5V	-	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF9Z24STRL	Vishay Siliconix	MOSFET P-CH 60V 11A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,696	MOSFET (Metal Oxide)	60V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	280 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF6215	Infineon Technologies	MOSFET P-CH 150V 13A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock10,068	MOSFET (Metal Oxide)	150V	13A (Tc)	10V	4V @ 250µA	66nC @ 10V	860pF @ 25V	±20V	-	110W (Tc)	290 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLR3717PBF	Infineon Technologies	MOSFET N-CH 20V 120A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,096	MOSFET (Metal Oxide)	20V	120A (Tc)	4.5V, 10V	2.45V @ 250µA	31nC @ 4.5V	2830pF @ 10V	±20V	-	89W (Tc)	4 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTK150N15P	IXYS	MOSFET N-CH 150V 150A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,208	MOSFET (Metal Oxide)	150V	150A (Tc)	10V	5V @ 250µA	190nC @ 10V	5800pF @ 25V	±20V	-	714W (Tc)	13 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
PCFQ5P10W	Fairchild/Micross Components	DIE MOSFET P-CH 100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock5,888	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	Die	Die
DMT3008LFDF-13	Diodes Incorporated	MOSFET N-CH 30V 12A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,888	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	3V @ 250µA	14nC @ 10V	886pF @ 15V	±20V	-	800mW (Ta)	10 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
TSM240N03CX RFG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,656	MOSFET (Metal Oxide)	30V	6.5A (Tc)	4.5V, 10V	2.5V @ 250µA	4.1nC @ 4.5V	345pF @ 25V	±20V	-	1.56W (Tc)	24 mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPI024N06N3GXKSA1	Infineon Technologies	MOSFET N-CH 60V 120A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 196µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock10,128	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 196µA	275nC @ 10V	23000pF @ 30V	±20V	-	250W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
NDB6060L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 48A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 24A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,972	MOSFET (Metal Oxide)	60V	48A (Tc)	5V, 10V	2V @ 250µA	60nC @ 5V	2000pF @ 25V	±16V	-	100W (Tc)	20 mOhm @ 24A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9640SPBF	Vishay Siliconix	MOSFET P-CH 200V 11A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,836	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	44nC @ 10V	1200pF @ 25V	±20V	-	3W (Ta), 125W (Tc)	500 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOD2N60A	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 2A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,872	MOSFET (Metal Oxide)	600V	2A (Tc)	10V	4.5V @ 250µA	11nC @ 10V	295pF @ 25V	±30V	-	57W (Tc)	4.7 Ohm @ 1A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
2N7002-G	Microchip Technology	MOSFET N-CH 60V 0.115A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 (TO-236AB) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock360,000	MOSFET (Metal Oxide)	60V	115mA (Tj)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±30V	-	360mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23 (TO-236AB)	TO-236-3, SC-59, SOT-23-3
AUIRFS8409-7P	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13975pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock12,522	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	3.9V @ 250µA	460nC @ 10V	13975pF @ 25V	±20V	-	375W (Tc)	0.75 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
RZF030P01TL	Rohm Semiconductor	MOSFET P-CH 12V 3A TUMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock457,776	MOSFET (Metal Oxide)	12V	3A (Ta)	1.5V, 4.5V	1V @ 1mA	18nC @ 4.5V	1860pF @ 6V	±10V	-	800mW (Ta)	39 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
IXTX40P50P	IXYS	MOSFET P-CH 500V 40A PLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,312	MOSFET (Metal Oxide)	500V	40A (Tc)	10V	4V @ 1mA	205nC @ 10V	11500pF @ 25V	±20V	-	890W (Tc)	230 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
BUK9Y29-40E,115	Nexperia USA Inc.	MOSFET N-CH 40V 25A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 664pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock336,486	MOSFET (Metal Oxide)	40V	25A (Tc)	5V	2.1V @ 1mA	5nC @ 5V	664pF @ 25V	±10V	-	37W (Tc)	25 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IAUC60N04S6N044ATMA1	Infineon Technologies	IAUC60N04S6N044ATMA1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 4.52mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: -	Stock42,411	MOSFET (Metal Oxide)	40 V	60A (Tc)	7V, 10V	3V @ 14µA	18 nC @ 10 V	1042 pF @ 25 V	±20V	-	42W (Tc)	4.52mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPP096N03LGHKSA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	15 nC @ 10 V	1600 pF @ 15 V	±20V	-	42W (Tc)	9.6mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPB023N04NF2SATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 122A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 81µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,283	MOSFET (Metal Oxide)	40 V	30A (Ta), 122A (Tc)	6V, 10V	3.4V @ 81µA	102 nC @ 10 V	4800 pF @ 20 V	±20V	-	3.8W (Ta), 150W (Tc)	2.35mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRLML2402TRPBF-1-ML	MOSLEADER	N 20V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DI045N10PQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	45A (Tc)	4.5V, 10V	2.5V @ 250µA	56 nC @ 10 V	2551 pF @ 50 V	±20V	-	50W (Tc)	13mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-QFN (5x6)	8-PowerTDFN
IRFZ20PBF-BE3	Vishay Siliconix	MOSFET N-CH 50V 15A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock1,950	MOSFET (Metal Oxide)	50 V	15A (Tc)	-	4V @ 250µA	17 nC @ 10 V	860 pF @ 25 V	±20V	-	40W (Tc)	100mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHFR9220-GE3	Vishay Siliconix	MOSFET P-CHANNEL 200V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock11,661	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	4V @ 250µA	20 nC @ 10 V	340 pF @ 25 V	±20V	-	2.5W (Ta), 42W (Tc)	1.5Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63