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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 66W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock10,332 |
|
MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 3.5V @ 230µA | 23.4nC @ 10V | 512pF @ 100V | ±20V | - | 66W (Tc) | 520 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? ST
- Package / Case: DirectFET? Isometric ST
|
Package: DirectFET? Isometric ST |
Stock58,980 |
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MOSFET (Metal Oxide) | 20V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17nC @ 4.5V | 1360pF @ 10V | ±20V | - | 1.4W (Ta), 42W (Tc) | 5.7 mOhm @ 15A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? ST | DirectFET? Isometric ST |
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Global Power Technologies Group |
MOSFET N-CH 700V 9A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1944pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock3,376 |
|
MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 1944pF @ 25V | ±30V | - | 52W (Tc) | 1.05 Ohm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Renesas Electronics America |
MOSFET N-CH 500V 14A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 465 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock3,232 |
|
MOSFET (Metal Oxide) | 500V | 14A (Ta) | 10V | - | 38nC @ 10V | 1450pF @ 25V | ±30V | - | 30W (Tc) | 465 mOhm @ 7A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 12A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,592 |
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MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 2290pF @ 25V | ±30V | - | 3.13W (Ta), 225W (Tc) | 650 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 55A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,784 |
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MOSFET (Metal Oxide) | 30V | 12.6A (Ta), 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 33nC @ 10V | 1260pF @ 15V | ±20V | - | 55W (Tc) | 11.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,016 |
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MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4V @ 60µA | 81nC @ 10V | 6500pF @ 25V | ±20V | - | 107W (Tc) | 5.1 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Microsemi Corporation |
MOSFET N-CH 600V 49A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 730W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3 Variant
|
Package: TO-247-3 Variant |
Stock3,152 |
|
MOSFET (Metal Oxide) | 600V | 49A (Tc) | 12V | 4V @ 2.5mA | - | 9000pF @ 25V | ±30V | - | 730W (Tc) | 125 mOhm @ 24.5A, 12V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock498,828 |
|
MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Nexperia USA Inc. |
PMPB215ENEA/SOT1220/SOT1220
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock4,688 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
MOSFET N-CH 120V 8MLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 60V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock6,688 |
|
MOSFET (Metal Oxide) | 120V | 13.5A (Ta) | 6V, 10V | 4V @ 250µA | 64nC @ 10V | 4250pF @ 60V | ±20V | - | 2.7W (Ta), 156W (Tc) | 7.2 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Nexperia USA Inc. |
MOSFET N-CH 100V 37A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1624pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Rds On (Max) @ Id, Vgs: 26.8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock16,428 |
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MOSFET (Metal Oxide) | 100V | 37A (Tc) | 10V | 4V @ 1mA | 30nC @ 10V | 1624pF @ 50V | ±20V | - | 103W (Tc) | 26.8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 16A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,096 |
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MOSFET (Metal Oxide) | 800V | 16A (Tc) | 10V | 5V @ 100µA | 33nC @ 10V | 1000pF @ 100V | ±30V | - | 190W (Tc) | 280 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 40V 75A 8HSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 138W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 37.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
|
Package: 8-SMD, Flat Lead Exposed Pad |
Stock6,800 |
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MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 116nC @ 10V | 6450pF @ 25V | ±20V | - | 1W (Ta), 138W (Tc) | 4.8 mOhm @ 37.5A, 10V | 175°C (TJ) | Surface Mount | 8-HSON | 8-SMD, Flat Lead Exposed Pad |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V,SO-8,T&R,2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,952 |
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MOSFET (Metal Oxide) | 60V | 9.8A (Ta) | 4.5V, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | ±16V | - | 1.25W (Ta) | 12 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 20V 0.25A SOT-323
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 250mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
|
Package: SC-70, SOT-323 |
Stock3,082,032 |
|
MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 2.5V, 4.5V | 2V @ 1mA | - | 50pF @ 10V | ±12V | - | 200mW (Ta) | 1.5 Ohm @ 250mA, 4.5V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Nexperia USA Inc. |
MOSFET N-CH 75V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 6760pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock38,076 |
|
MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 1mA | - | 6760pF @ 25V | ±20V | - | 230W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3P(N)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock9,384 |
|
MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 3.7V @ 1.9mA | 135nC @ 10V | 4100pF @ 300V | ±30V | Super Junction | 270W (Tc) | 65 mOhm @ 19.4A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Stock5,607 |
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MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | - | 4V @ 250µA | 14 nC @ 10 V | 229 pF @ 25 V | ±30V | - | 36W (Tc) | 7Ohm @ 840mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V PWRDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.98W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 18A (Ta), 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48.7 nC @ 10 V | 3150 pF @ 30 V | ±20V | - | 1.98W (Ta), 62.5W (Tc) | 4.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
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Central Semiconductor Corp |
MOSFET P-CH 20V 650MA SOT523
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
- Vgs (Max): 8V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
Stock64,008 |
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MOSFET (Metal Oxide) | 20 V | 650mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 1.2 nC @ 4.5 V | 100 pF @ 16 V | 8V | - | 300mW (Ta) | 360mOhm @ 350mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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IXYS |
MOSFET N-CH 19A SOT-227B
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V TO252 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,500 |
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MOSFET (Metal Oxide) | 40 V | 6.7A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 33.7 nC @ 10 V | 1643 pF @ 20 V | ±20V | - | 1.7W (Ta) | 25mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Microchip Technology |
MOSFET SIC 1200 V 40 MOHM TO-268
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.6V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- Vgs (Max): +23V, -10V
- FET Feature: -
- Power Dissipation (Max): 303W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock1,191 |
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SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 2.6V @ 2mA | 137 nC @ 20 V | 1990 pF @ 1000 V | +23V, -10V | - | 303W (Tc) | 50mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
MOSFET N-CH 650V 68A TO247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 450W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 68A (Tc) | 10V | 4.75V @ 250µA | 125 nC @ 10 V | 4900 pF @ 100 V | ±25V | - | 450W (Tc) | 40mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 1000V 3A TO263HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1000 V | 3A (Tj) | 0V | 4.5V @ 250µA | 37.5 nC @ 5 V | 1020 pF @ 25 V | ±20V | Depletion Mode | 125W (Tc) | 6Ohm @ 1.5A, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263HV | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 3A UFM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Lead
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Package: - |
Stock30,759 |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 103mOhm @ 1A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Lead |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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