Page 1122 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6668TR1
Infineon Technologies

MOSFET N-CH 80V 55A DIRECTFET-MZ

Package: DirectFET? Isometric MZ

Stock4,240
BSC072N025S G
Infineon Technologies

MOSFET N-CH 25V 40A TDSON-8

Package: 8-PowerTDFN

Stock4,016
IXFD24N50Q-72
IXYS

MOSFET N-CH

Package: -

Stock6,704
APT5022BNG
Microsemi Corporation

MOSFET N-CH 500V 27A TO247AD

Package: TO-247-3

Stock7,280
PMXB56EN
Nexperia USA Inc.

MOSFET N-CH 30V 3.2A 3DFN

Package: 3-XDFN Exposed Pad

Stock58,080
NTGS4111PT1
ON Semiconductor

MOSFET P-CH 30V 2.6A 6-TSOP

Package: SOT-23-6

Stock7,744
HUFA76413P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 23A TO-220AB

Package: TO-220-3

Stock2,848
FDP2570
Fairchild/ON Semiconductor

MOSFET N-CH 150V 22A TO-220AB

Package: TO-220-3

Stock103,464
IPW65R065C7XKSA1
Infineon Technologies

MOSFET N-CH 650V TO-247-3

Package: TO-247-3

Stock3,552
IPC90R340C3X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock2,336
IRF3717PBF
Infineon Technologies

MOSFET N-CH 20V 20A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,368
SIHP25N40D-E3
Vishay Siliconix

MOSFET N-CH 400V 25A TO-220AB

Package: TO-220-3

Stock2,336
CSD19531Q5A
Texas Instruments

MOSFET N-CH 100V 100A 8SON

Package: 8-PowerTDFN

Stock16,440
IPP65R225C7XKSA1
Infineon Technologies

MOSFET N-CH 650V 11A TO-220-3

Package: TO-220-3

Stock10,908
DMP6250SE-13
Diodes Incorporated

MOSFET P-CH 60V 2.1A SOT223

Package: TO-261-4, TO-261AA

Stock4,320
SI8806DB-T2-E1
Vishay Siliconix

MOSFET N-CH 12V MICROFOOT

Package: 4-XFBGA

Stock7,648
STF38N65M5
STMicroelectronics

MOSFET N-CH 650V 30A TO-220FP

Package: TO-220-3 Full Pack

Stock7,524
IPW65R070C6
Infineon Technologies

MOSFET N-CH 650V 53.5A TO247

Package: TO-247-3

Stock149,484
STP5N80K5
STMicroelectronics

N-CHANNEL 800 V, 1.50 OHM TYP.,

Package: TO-220-3

Stock18,036
IPP530N15N3 G
Infineon Technologies

MOSFET N-CH 150V 21A TO220-3

Package: TO-220-3

Stock14,700

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6668TR1	Infineon Technologies	MOSFET N-CH 80V 55A DIRECTFET-MZ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock4,240	MOSFET (Metal Oxide)	80V	55A (Tc)	10V	4.9V @ 100µA	31nC @ 10V	1320pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	15 mOhm @ 12A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
BSC072N025S G	Infineon Technologies	MOSFET N-CH 25V 40A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,016	MOSFET (Metal Oxide)	25V	15A (Ta), 40A (Tc)	4.5V, 10V	2V @ 30µA	18nC @ 5V	2230pF @ 15V	±20V	-	2.8W (Ta), 60W (Tc)	7.2 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IXFD24N50Q-72	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,704	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT5022BNG	Microsemi Corporation	MOSFET N-CH 500V 27A TO247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock7,280	MOSFET (Metal Oxide)	500V	27A (Tc)	10V	4V @ 1mA	210nC @ 10V	3500pF @ 25V	±30V	-	360W (Tc)	220 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
PMXB56EN	Nexperia USA Inc.	MOSFET N-CH 30V 3.2A 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 209pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	Package: 3-XDFN Exposed Pad	Stock58,080	MOSFET (Metal Oxide)	30V	3.2A (Ta)	4.5V, 10V	2V @ 250µA	6.3nC @ 10V	209pF @ 15V	±20V	-	400mW (Ta), 8.33W (Tc)	55 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
NTGS4111PT1	ON Semiconductor	MOSFET P-CH 30V 2.6A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock7,744	MOSFET (Metal Oxide)	30V	2.6A (Ta)	4.5V, 10V	3V @ 250µA	32nC @ 10V	750pF @ 15V	±20V	-	630mW (Ta)	60 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
HUFA76413P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 23A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,848	MOSFET (Metal Oxide)	60V	23A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 10V	645pF @ 25V	±16V	-	60W (Tc)	49 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDP2570	Fairchild/ON Semiconductor	MOSFET N-CH 150V 22A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1911pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 11A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	150V	22A (Ta)	6V, 10V	4V @ 250µA	56nC @ 10V	1911pF @ 75V	±20V	-	93W (Tc)	80 mOhm @ 11A, 10V	-65°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPW65R065C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO-247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 171W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,552	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	4V @ 850µA	64nC @ 10V	3020pF @ 400V	±20V	-	171W (Tc)	65 mOhm @ 17.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPC90R340C3X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,336	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF3717PBF	Infineon Technologies	MOSFET N-CH 20V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,368	MOSFET (Metal Oxide)	20V	20A (Ta)	4.5V, 10V	2.45V @ 250µA	33nC @ 4.5V	2890pF @ 10V	±20V	-	2.5W (Ta)	4.4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SIHP25N40D-E3	Vishay Siliconix	MOSFET N-CH 400V 25A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,336	MOSFET (Metal Oxide)	400V	25A (Tc)	10V	5V @ 250µA	88nC @ 10V	1707pF @ 100V	±30V	-	278W (Tc)	170 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
CSD19531Q5A	Texas Instruments	MOSFET N-CH 100V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3870pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock16,440	MOSFET (Metal Oxide)	100V	100A (Tc)	6V, 10V	3.3V @ 250µA	48nC @ 10V	3870pF @ 50V	±20V	-	3.3W (Ta), 125W (Tc)	6.4 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
IPP65R225C7XKSA1	Infineon Technologies	MOSFET N-CH 650V 11A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 225 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock10,908	MOSFET (Metal Oxide)	650V	11A (Tc)	10V	4V @ 240µA	20nC @ 10V	996pF @ 400V	±20V	-	63W (Tc)	225 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
DMP6250SE-13	Diodes Incorporated	MOSFET P-CH 60V 2.1A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 551pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 14W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,320	MOSFET (Metal Oxide)	60V	2.1A (Ta)	4.5V, 10V	3V @ 250µA	9.7nC @ 10V	551pF @ 30V	±20V	-	1.8W (Ta), 14W (Tc)	250 mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SI8806DB-T2-E1	Vishay Siliconix	MOSFET N-CH 12V MICROFOOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 43 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA	Package: 4-XFBGA	Stock7,648	MOSFET (Metal Oxide)	12V	-	1.8V, 4.5V	1V @ 250µA	17nC @ 8V	-	±8V	-	500mW (Ta)	43 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA
STF38N65M5	STMicroelectronics	MOSFET N-CH 650V 30A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,524	MOSFET (Metal Oxide)	650V	30A (Tc)	10V	5V @ 250µA	71nC @ 10V	3000pF @ 100V	±25V	-	35W (Tc)	95 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPW65R070C6	Infineon Technologies	MOSFET N-CH 650V 53.5A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.76mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 391W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 17.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock149,484	MOSFET (Metal Oxide)	650V	53.5A (Tc)	10V	3.5V @ 1.76mA	170nC @ 10V	3900pF @ 100V	±20V	-	391W (Tc)	70 mOhm @ 17.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
STP5N80K5	STMicroelectronics	N-CHANNEL 800 V, 1.50 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock18,036	MOSFET (Metal Oxide)	800V	4A (Tc)	10V	5V @ 100µA	5nC @ 10V	177pF @ 100V	±30V	-	60W (Tc)	1.75 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IPP530N15N3 G	Infineon Technologies	MOSFET N-CH 150V 21A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock14,700	MOSFET (Metal Oxide)	150V	21A (Tc)	8V, 10V	4V @ 35µA	12nC @ 10V	887pF @ 75V	±20V	-	68W (Tc)	53 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
BSC050N04LSGATMA1	Infineon Technologies	MOSFET N-CH 40V 85A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock212,814	MOSFET (Metal Oxide)	40V	18A (Ta), 85A (Tc)	4.5V, 10V	2V @ 27µA	47nC @ 10V	3700pF @ 20V	±20V	-	2.5W (Ta), 57W (Tc)	5 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
SI4423DY-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 600µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock705,420	MOSFET (Metal Oxide)	20V	10A (Ta)	1.8V, 4.5V	900mV @ 600µA	175nC @ 5V	-	±8V	-	1.5W (Ta)	7.5 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RF1K49157	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6.3A (Ta)	4.5V, 10V	3V @ 250µA	88 nC @ 20 V	1575 pF @ 25 V	±20V	-	2W (Ta)	30mOhm @ 6.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
DI330N04D7	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12850 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	330A (Tc)	10V	4V @ 250µA	157 nC @ 10 V	12850 pF @ 20 V	±20V	-	375W (Tc)	0.75mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
2N7002KT7G	onsemi	MOSFET N-CH 60V 320MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock252,108	MOSFET (Metal Oxide)	60 V	320mA (Ta)	4.5V, 10V	2.3V @ 250µA	0.7 nC @ 4.5 V	24.5 pF @ 20 V	±20V	-	300mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
G18N50T	Goford Semiconductor	MOSFET N-CH 500V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 189.3W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock150	MOSFET (Metal Oxide)	500 V	18A (Tc)	10V	5V @ 250µA	50 nC @ 10 V	3000 pF @ 250 V	±30V	-	189.3W (Tc)	350mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SCT070W120G3-4AG	STMicroelectronics	TO247-4 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V Vgs (Max): +18V, -5V FET Feature: - Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	30A (Tc)	15V, 18V	4.2V @ 1mA	41 nC @ 18 V	900 pF @ 850 V	+18V, -5V	-	236W (Tc)	87mOhm @ 15A, 18V	-55°C ~ 200°C (TJ)	Through Hole	TO-247-4	TO-247-4
FQD12N20LTM-F085	onsemi	MOSFET N-CH 200V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock30,000	MOSFET (Metal Oxide)	200 V	9A (Tc)	5V, 10V	2V @ 250µA	21 nC @ 5 V	1080 pF @ 25 V	±20V	-	2.5W (Ta), 55W (Tc)	280mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63