Page 1119 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF8721GPBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,288
IRF7811
Infineon Technologies

MOSFET N-CH 28V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock25,800
SFT1452-H
ON Semiconductor

MOSFET P-CH

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,960
CPC3730C
IXYS Integrated Circuits Division

MOSFET N-CH 350V SOT89

Package: TO-243AA

Stock6,832
NTD5865NT4G
ON Semiconductor

MOSFET N-CH 60V 43A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock714,432
HUFA75637S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,008
HUFA76409D3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 18A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,488
IRFD9014
Vishay Siliconix

MOSFET P-CH 60V 1.1A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock4,480
NTMFS4833NAT1G
ON Semiconductor

MOSFET N-CH 30V 191A SO8FL

Package: 8-PowerTDFN

Stock3,568
SQM40010EL_GE3
Vishay Siliconix

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,672
FDME910PZT
Fairchild/ON Semiconductor

MOSFET P CH 20V 8A MICROFET

Package: 6-PowerUFDFN

Stock87,312
FDP51N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 51A TO-220

Package: TO-220-3

Stock401,592
BSC028N06LS3GATMA1
Infineon Technologies

MOSFET N-CH 60V 100A TDSON-8

Package: 8-PowerTDFN

Stock98,790
IXFN36N100
IXYS

MOSFET N-CH 1KV 36A SOT-227B

Package: SOT-227-4, miniBLOC

Stock8,340
STP24NF10
STMicroelectronics

MOSFET N-CH 100V 26A TO-220

Package: TO-220-3

Stock984,492
NDT456P
Fairchild/ON Semiconductor

MOSFET P-CH 30V 7.5A SOT-223-4

Package: TO-261-4, TO-261AA

Stock773,748
DMT35M4LPSW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI506

Package: -

Request a Quote
DMN3029LFG-13
Diodes Incorporated

MOSFET N-CH 30V 5.3A PWRDI333-8

Package: -

Request a Quote
FK10KM-12-A8-B00
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
FK4B01120L
Nuvoton Technology Corporation

SINGLE NCH MOSFET, 12V, 3.9A 17M

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF8721GPBF	Infineon Technologies	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,288	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1040pF @ 15V	±20V	-	2.5W (Ta)	8.5 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7811	Infineon Technologies	MOSFET N-CH 28V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock25,800	MOSFET (Metal Oxide)	28V	14A (Ta)	4.5V	1V @ 250µA	23nC @ 5V	1800pF @ 16V	±12V	-	3.5W (Ta)	11 mOhm @ 15A, 4.5V	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SFT1452-H	ON Semiconductor	MOSFET P-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK/TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,960	MOSFET (Metal Oxide)	250V	3A (Ta)	10V	4.5V @ 1mA	4.2nC @ 10V	210pF @ 20V	±30V	-	1W (Ta), 26W (Tc)	2.4 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	IPAK/TP	TO-251-3 Short Leads, IPak, TO-251AA
CPC3730C	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 35 Ohm @ 140mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: TO-243AA	Stock6,832	MOSFET (Metal Oxide)	350V	-	0V	-	-	200pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	35 Ohm @ 140mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
NTD5865NT4G	ON Semiconductor	MOSFET N-CH 60V 43A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1261pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock714,432	MOSFET (Metal Oxide)	60V	43A (Tc)	10V	4V @ 250µA	23nC @ 10V	1261pF @ 25V	±20V	-	71W (Tc)	18 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA75637S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 44A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,008	MOSFET (Metal Oxide)	100V	44A (Tc)	10V	4V @ 250µA	108nC @ 20V	1700pF @ 25V	±20V	-	155W (Tc)	30 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76409D3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 18A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,488	MOSFET (Metal Oxide)	60V	18A (Tc)	4.5V, 10V	3V @ 250µA	15nC @ 10V	485pF @ 25V	±16V	-	49W (Tc)	63 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFD9014	Vishay Siliconix	MOSFET P-CH 60V 1.1A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 500 mOhm @ 660mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock4,480	MOSFET (Metal Oxide)	60V	1.1A (Ta)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	1.3W (Ta)	500 mOhm @ 660mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
NTMFS4833NAT1G	ON Semiconductor	MOSFET N-CH 30V 191A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 191A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,568	MOSFET (Metal Oxide)	30V	16A (Ta), 191A (Tc)	-	2.5V @ 250µA	150nC @ 11.5V	7500pF @ 12V	-	-	-	1.9 mOhm @ 30A, 10V	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SQM40010EL_GE3	Vishay Siliconix	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 17100pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,672	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	230nC @ 10V	17100pF @ 20V	±20V	-	375W (Tc)	1.6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDME910PZT	Fairchild/ON Semiconductor	MOSFET P CH 20V 8A MICROFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MicroFet 1.6x1.6 Thin Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock87,312	MOSFET (Metal Oxide)	20V	8A (Ta)	1.8V, 4.5V	1.5V @ 250µA	21nC @ 4.5V	2110pF @ 10V	±8V	-	2.1W (Ta)	24 mOhm @ 8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MicroFet 1.6x1.6 Thin	6-PowerUFDFN
FDP51N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 51A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock401,592	MOSFET (Metal Oxide)	250V	51A (Tc)	10V	5V @ 250µA	70nC @ 10V	3410pF @ 25V	±30V	-	320W (Tc)	60 mOhm @ 25.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BSC028N06LS3GATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock98,790	MOSFET (Metal Oxide)	60V	23A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 93µA	175nC @ 10V	13000pF @ 30V	±20V	-	2.5W (Ta), 139W (Tc)	2.8 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IXFN36N100	IXYS	MOSFET N-CH 1KV 36A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 36A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock8,340	MOSFET (Metal Oxide)	1000V	36A	10V	5V @ 8mA	380nC @ 10V	9200pF @ 25V	±20V	-	700W (Tc)	240 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
STP24NF10	STMicroelectronics	MOSFET N-CH 100V 26A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock984,492	MOSFET (Metal Oxide)	100V	26A (Tc)	10V	4V @ 250µA	41nC @ 10V	870pF @ 25V	±20V	-	85W (Tc)	60 mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NDT456P	Fairchild/ON Semiconductor	MOSFET P-CH 30V 7.5A SOT-223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock773,748	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1440pF @ 15V	±20V	-	3W (Ta)	30 mOhm @ 7.5A, 10V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
DMT35M4LPSW-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	18.9A (Ta), 71.1A (Tc)	4.5V, 10V	2.5V @ 250µA	16 nC @ 10 V	1029 pF @ 15 V	±20V	-	1.5W (Ta)	5.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
DMN3029LFG-13	Diodes Incorporated	MOSFET N-CH 30V 5.3A PWRDI333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.3A (Ta)	4.5V, 10V	1.8V @ 250µA	11.3 nC @ 10 V	580 pF @ 15 V	±25V	-	1W (Ta)	18.6mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
FK10KM-12-A8-B00	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FK4B01120L	Nuvoton Technology Corporation	SINGLE NCH MOSFET, 12V, 3.9A 17M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 394µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 1.5A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 4-CSP (1x1) Package / Case: 4-XFLGA, CSP	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	3.9A (Ta)	1.5V, 4.5V	1V @ 394µA	7 nC @ 4.5 V	490 pF @ 10 V	±8V	-	370mW (Ta)	24mOhm @ 1.5A, 4.5V	150°C	Surface Mount	4-CSP (1x1)	4-XFLGA, CSP
STO67N60M6	STMicroelectronics	MOSFET N-CH 600V 34A TOLL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL (HV) Package / Case: 8-PowerSFN	Package: -	Stock5,400	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	4.75V @ 250µA	72.5 nC @ 10 V	3400 pF @ 100 V	±25V	-	150W (Tc)	54mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TOLL (HV)	8-PowerSFN
FDB3632_SB82115	onsemi	MOSFET N-CH 100V 12A/80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	12A (Ta), 80A (Tc)	6V, 10V	4V @ 250µA	110 nC @ 10 V	6000 pF @ 25 V	±20V	-	310W (Tc)	9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
2SK1470-TD-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCH060N80-F155	onsemi	MOSFET N-CH 800V 56A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 5.8mA Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14685 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock2,592	MOSFET (Metal Oxide)	800 V	56A (Tc)	10V	4.5V @ 5.8mA	350 nC @ 10 V	14685 pF @ 100 V	±20V	-	500W (Tc)	60mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IQD016N08NM5CGATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 159µA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	31A (Ta), 323A (Tc)	6V, 10V	3.8V @ 159µA	133 nC @ 10 V	9200 pF @ 40 V	±20V	-	3W (Ta), 333W (Tc)	1.57mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
PJD16P06A-AU_L2_000A1	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock441	MOSFET (Metal Oxide)	60 V	5A (Ta), 16A (Tc)	4.5V, 10V	2.5V @ 250µA	22 nC @ 10 V	1256 pF @ 30 V	±20V	-	2W (Ta), 25W (Tc)	48mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IQE022N06LM5SCATMA1	Infineon Technologies	OPTIMOS 5 POWER-TRANSISTOR 60V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WHSON-8 Package / Case: 8-PowerWDFN	Package: -	Stock17,985	MOSFET (Metal Oxide)	60 V	24A (Ta), 151A (Tc)	4.5V, 10V	2.3V @ 48µA	53 nC @ 10 V	4420 pF @ 30 V	±20V	-	2.5W (Ta), 100W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WHSON-8	8-PowerWDFN
SIR106DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 100V 16.1A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock20,412	MOSFET (Metal Oxide)	100 V	16.1A (Ta), 65.8A (Tc)	7.5V, 10V	3.4V @ 250µA	64 nC @ 10 V	3610 pF @ 50 V	±20V	-	3.2W (Ta), 83.3W (Tc)	8mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8