Page 1120 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD30N03S2L-10
Infineon Technologies

MOSFET N-CH 30V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock187,428
IRLU2703
Infineon Technologies

MOSFET N-CH 30V 23A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock74,412
SCH1433-S-TL-H
ON Semiconductor

MOSFET N-CH 20V 3.5A SCH6

Package: SOT-563, SOT-666

Stock293,280
PHM12NQ20T,518
NXP

MOSFET N-CH 200V 14.4A 8HVSON

Package: 8-VDFN Exposed Pad

Stock7,952
FQI5N15TU
Fairchild/ON Semiconductor

MOSFET N-CH 150V 5.4A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,424
FDD6632
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock90,120
IXTA3N60P
IXYS

MOSFET N-CH 600V 3A D2-PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,400
RSH100N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 10A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock49,440
NTMFS4C06NAT1G
ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

Package: -

Stock2,368
STH185N10F3-2
STMicroelectronics

MOSFET N-CH 100V 180A H2PAK-2

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock2,544
RSJ550N10TL
Rohm Semiconductor

MOSFET N-CH 100V 55A LPTS

Package: SC-83

Stock6,192
STD10PF06-1
STMicroelectronics

MOSFET P-CH 60V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock60,888
STI34N65M5
STMicroelectronics

MOSFET N-CH 650V 28A I2PAK

Package: TO-262-3 Full Pack, I2Pak

Stock21,276
FDMS0309AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 21A PT8

Package: 8-PowerTDFN

Stock389,064
IPD50R3K0CEBTMA1
Infineon Technologies

MOSFET N-CH 500V 1.7A PG-TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock26,328
2N7000_D26Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock235,572
SIR426DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 30A PPAK SO-8

Package: PowerPAK? SO-8

Stock65,976
BSC0802LSATMA1
Infineon Technologies

MOSFET N-CH 100V 20A/100A TDSON

Package: -

Stock18,060
SI3401AHE3-TP
Micro Commercial Co

P-CHANNEL MOSFET,SOT-23

Package: -

Stock5,250
RTQ035P02HZGTR
Rohm Semiconductor

MOSFET P-CH 20V 3.5A TSMT6

Package: -

Stock7,773

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD30N03S2L-10	Infineon Technologies	MOSFET N-CH 30V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock187,428	MOSFET (Metal Oxide)	30V	30A (Tc)	4.5V, 10V	2V @ 50µA	41.8nC @ 10V	1550pF @ 25V	±20V	-	100W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLU2703	Infineon Technologies	MOSFET N-CH 30V 23A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock74,412	MOSFET (Metal Oxide)	30V	23A (Tc)	4.5V, 10V	1V @ 250µA	15nC @ 4.5V	450pF @ 25V	±16V	-	45W (Tc)	45 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SCH1433-S-TL-H	ON Semiconductor	MOSFET N-CH 20V 3.5A SCH6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock293,280	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	6-SCH	SOT-563, SOT-666
PHM12NQ20T,518	NXP	MOSFET N-CH 200V 14.4A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock7,952	MOSFET (Metal Oxide)	200V	14.4A (Tc)	5V, 10V	4V @ 1mA	26nC @ 10V	1230pF @ 25V	±20V	-	62.5W (Tc)	130 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
FQI5N15TU	Fairchild/ON Semiconductor	MOSFET N-CH 150V 5.4A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,424	MOSFET (Metal Oxide)	150V	5.4A (Tc)	10V	4V @ 250µA	7nC @ 10V	230pF @ 25V	±25V	-	3.75W (Ta), 54W (Tc)	800 mOhm @ 2.7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FDD6632	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock90,120	MOSFET (Metal Oxide)	30V	9A (Tc)	4.5V, 10V	3V @ 250µA	4nC @ 5V	255pF @ 15V	±20V	-	15W (Tc)	70 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTA3N60P	IXYS	MOSFET N-CH 600V 3A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,400	MOSFET (Metal Oxide)	600V	3A (Tc)	10V	5.5V @ 50µA	9.8nC @ 10V	411pF @ 25V	±30V	-	70W (Tc)	2.9 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RSH100N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 10A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock49,440	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	20nC @ 5V	1070pF @ 10V	±20V	-	2W (Ta)	13.3 mOhm @ 10A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
NTMFS4C06NAT1G	ON Semiconductor	MOSFET N-CH 30V 11A SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,368	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STH185N10F3-2	STMicroelectronics	MOSFET N-CH 100V 180A H2PAK-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6665pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: H2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock2,544	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4V @ 250µA	114.6nC @ 10V	6665pF @ 25V	±20V	-	315W (Tc)	4.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	H2PAK	TO-263-3, D2Pak (2 Leads + Tab) Variant
RSJ550N10TL	Rohm Semiconductor	MOSFET N-CH 100V 55A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 16.8 mOhm @ 27.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: SC-83	Package: SC-83	Stock6,192	MOSFET (Metal Oxide)	100V	55A (Ta)	4V, 10V	2.5V @ 1mA	143nC @ 10V	6150pF @ 25V	±20V	-	100W (Tc)	16.8 mOhm @ 27.5A, 10V	150°C (TJ)	Surface Mount	LPTS	SC-83
STD10PF06-1	STMicroelectronics	MOSFET P-CH 60V 10A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock60,888	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	21nC @ 10V	850pF @ 25V	±20V	-	40W (Tc)	200 mOhm @ 5A, 10V	175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STI34N65M5	STMicroelectronics	MOSFET N-CH 650V 28A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock21,276	MOSFET (Metal Oxide)	650V	28A (Tc)	10V	5V @ 250µA	62.5nC @ 10V	2700pF @ 100V	±25V	-	190W (Tc)	110 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
FDMS0309AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 21A PT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock389,064	MOSFET (Metal Oxide)	30V	21A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	47nC @ 10V	3000pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	3.5 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
IPD50R3K0CEBTMA1	Infineon Technologies	MOSFET N-CH 500V 1.7A PG-TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 18W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 400mA, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock26,328	MOSFET (Metal Oxide)	500V	1.7A (Tc)	13V	3.5V @ 30µA	4.3nC @ 10V	84pF @ 100V	±20V	-	18W (Tc)	3 Ohm @ 400mA, 13V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
2N7000_D26Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock235,572	MOSFET (Metal Oxide)	60V	200mA (Ta)	4.5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SIR426DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock65,976	MOSFET (Metal Oxide)	40V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	31nC @ 10V	1160pF @ 20V	±20V	-	4.8W (Ta), 41.7W (Tc)	10.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
BSC0802LSATMA1	Infineon Technologies	MOSFET N-CH 100V 20A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	Package: -	Stock18,060	MOSFET (Metal Oxide)	100 V	20A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 115µA	46 nC @ 4.5 V	6500 pF @ 50 V	±20V	-	156W (Tc)	3.4mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
SI3401AHE3-TP	Micro Commercial Co	P-CHANNEL MOSFET,SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.4A Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.2W Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock5,250	MOSFET (Metal Oxide)	30 V	4.4A	2.5V, 10V	1.3V @ 250µA	-	1050 pF @ 15 V	±12V	-	1.2W	60mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RTQ035P02HZGTR	Rohm Semiconductor	MOSFET P-CH 20V 3.5A TSMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT6 (SC-95) Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock7,773	MOSFET (Metal Oxide)	20 V	3.5A (Ta)	2.5V, 4.5V	2V @ 1mA	10.5 nC @ 4.5 V	1200 pF @ 10 V	±12V	-	950mW (Ta)	65mOhm @ 3.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT6 (SC-95)	SOT-23-6 Thin, TSOT-23-6
ISP650P06NMXTSA1	Infineon Technologies	MOSFET P-CH 60V 3.7A SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.037mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: -	Stock4,455	MOSFET (Metal Oxide)	60 V	3.7A (Ta)	10V	4V @ 1.037mA	39 nC @ 10 V	1600 pF @ 30 V	±20V	-	1.8W (Ta), 4.2W (Tc)	65mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IXTU4N70X2	IXYS	MOSFET N-CH 700V 4A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Stub Leads, IPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	4.5V @ 250µA	11.8 nC @ 10 V	386 pF @ 25 V	±30V	-	80W (Tc)	850mOhm @ 2A, 10V	150°C (TJ)	Through Hole	TO-251-3	TO-251-3 Stub Leads, IPAK
IXFP44N25X3	IXYS	MOSFET N-CH 250V 44A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	44A (Tc)	10V	4.5V @ 1mA	33 nC @ 10 V	2200 pF @ 25 V	±20V	-	240W (Tc)	40mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
R6524ENZC8	Rohm Semiconductor	MOSFET N-CH 650V 24A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	4V @ 750µA	70 nC @ 10 V	1650 pF @ 25 V	±20V	-	74W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
GT025N06AD5	Goford Semiconductor	N60V, 170A, RD<2.2M@10V,VTH1.2V~ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5044 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (4.9x5.75) Package / Case: 8-PowerTDFN	Package: -	Stock13,923	MOSFET (Metal Oxide)	60 V	170A (Tc)	4.5V, 10V	2.5V @ 250µA	81 nC @ 10 V	5044 pF @ 30 V	±20V	-	104W (Tc)	2.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
EPC2219	EPC	TRANS GAN 65V AECQ101 3.3OHM DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock23,847	GaNFET (Gallium Nitride)	65 V	500mA (Ta)	5V	2.5V @ 100µA	0.064 nC @ 5 V	10 pF @ 32.5 V	-	-	-	3.3Ohm @ 59mA, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
MCU50N03-TP	Micro Commercial Co	MOSFET N-CH ENH FET 30VDS 50A 20 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	10V	3V @ 250µA	23 nC @ 10 V	2000 pF @ 15 V	±20V	-	60W	6.5mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
G3R60MT07D	GeneSiC Semiconductor	750V 60M TO-247-3 G3R SIC MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock8,604	SiCFET (Silicon Carbide)	750 V	-	-	-	-	-	+20V, -10V	-	-	-	-	Through Hole	TO-247-3	TO-247-3