Page 114 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AOTF10N60_006
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO220F

Package: TO-220-3 Full Pack

Stock2,384
AOI2606
Alpha & Omega Semiconductor Inc.

MOSFET NCH 60V 46A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock7,152
2N7236U
Microsemi Corporation

MOSFET P-CH 100V SMD1

Package: TO-267AB

Stock7,984
JANTXV2N7224
Microsemi Corporation

MOSFET N-CH 100V 34A

Package: TO-254-3, TO-254AA (Straight Leads)

Stock3,168
HUFA76419D3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 20A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,392
IRL520L
Vishay Siliconix

MOSFET N-CH 100V 9.2A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,920
IRFR1N60ATRR
Vishay Siliconix

MOSFET N-CH 600V 1.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,504
IPI600N25N3GAKSA1
Infineon Technologies

MOSFET N-CH 250V 25A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,272
IPB240N03S4LR9ATMA1
Infineon Technologies

MOSFET N-CH TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock4,960
IRLR8729TRLPBF
Infineon Technologies

MOSFET N-CH 30V 58A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,000
IXTP4N80P
IXYS

MOSFET N-CH 800V 3.5A TO-220

Package: TO-220-3

Stock7,664
NTMFS4852NT3G
ON Semiconductor

MOSFET N-CH 30V 16A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,224
NVMFS5826NLT1G
ON Semiconductor

MOSFET N-CH 60V 26A SO8FL

Package: 8-PowerTDFN

Stock2,464
STD9N80K5
STMicroelectronics

MOSFET N-CH 800V 7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,104
STF5N65M6
STMicroelectronics

MOSFET N-CH 650V 4A TO-220FP

Package: -

Stock4,944
SI2333CDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 7.1A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock1,263,060
SPP08N80C3
Infineon Technologies

MOSFET N-CH 800V 8A TO-220AB

Package: TO-220-3

Stock432,324
FDD6670A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 15A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock433,200
STF27N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 20A TO-220FP

Package: TO-220-3 Full Pack

Stock22,260
IPP320N20N3 G
Infineon Technologies

MOSFET N-CH 200V 34A TO220-3

Package: TO-220-3

Stock450,468

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOTF10N60_006	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,384	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	40nC @ 10V	1600pF @ 25V	±30V	-	50W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
AOI2606	Alpha & Omega Semiconductor Inc.	MOSFET NCH 60V 46A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,152	MOSFET (Metal Oxide)	60V	14A (Ta), 46A (Tc)	10V	3.5V @ 250µA	75nC @ 10V	4050pF @ 30V	±20V	-	2.5W (Ta), 150W (Tc)	6.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
2N7236U	Microsemi Corporation	MOSFET P-CH 100V SMD1 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-267AB Package / Case: TO-267AB	Package: TO-267AB	Stock7,984	MOSFET (Metal Oxide)	100V	18A (Tc)	10V	4V @ 250µA	60nC @ 10V	-	±20V	-	4W (Ta), 125W (Tc)	200 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-267AB	TO-267AB
JANTXV2N7224	Microsemi Corporation	MOSFET N-CH 100V 34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock3,168	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	81 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
HUFA76419D3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 20A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,392	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	3V @ 250µA	27.5nC @ 10V	900pF @ 25V	±16V	-	75W (Tc)	37 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRL520L	Vishay Siliconix	MOSFET N-CH 100V 9.2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,920	MOSFET (Metal Oxide)	100V	9.2A (Tc)	4V, 5V	2V @ 250µA	12nC @ 5V	490pF @ 25V	±10V	-	60W (Tc)	270 mOhm @ 5.5A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR1N60ATRR	Vishay Siliconix	MOSFET N-CH 600V 1.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,504	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	229pF @ 25V	±30V	-	36W (Tc)	7 Ohm @ 840mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPI600N25N3GAKSA1	Infineon Technologies	MOSFET N-CH 250V 25A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,272	MOSFET (Metal Oxide)	250V	25A (Tc)	10V	4V @ 90µA	29nC @ 10V	2350pF @ 100V	±20V	-	136W (Tc)	60 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IPB240N03S4LR9ATMA1	Infineon Technologies	MOSFET N-CH TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20300pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 0.92 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock4,960	MOSFET (Metal Oxide)	30V	240A (Tc)	4.5V, 10V	2.2V @ 180µA	300nC @ 10V	20300pF @ 25V	±16V	-	231W (Tc)	0.92 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab)
IRLR8729TRLPBF	Infineon Technologies	MOSFET N-CH 30V 58A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,000	MOSFET (Metal Oxide)	30V	58A (Tc)	4.5V, 10V	2.35V @ 25µA	16nC @ 4.5V	1350pF @ 15V	±20V	-	55W (Tc)	8.9 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP4N80P	IXYS	MOSFET N-CH 800V 3.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,664	MOSFET (Metal Oxide)	800V	3.6A (Tc)	10V	5.5V @ 100µA	14.2nC @ 10V	750pF @ 25V	±30V	-	100W (Tc)	3.4 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMFS4852NT3G	ON Semiconductor	MOSFET N-CH 30V 16A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 155A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4970pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,224	MOSFET (Metal Oxide)	30V	16A (Ta), 155A (Tc)	4.5V, 10V	2.5V @ 250µA	71.3nC @ 10V	4970pF @ 12V	±20V	-	900mW (Ta), 86.2W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMFS5826NLT1G	ON Semiconductor	MOSFET N-CH 60V 26A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,464	MOSFET (Metal Oxide)	60V	8A (Ta)	4.5V, 10V	2.5V @ 250µA	17nC @ 10V	850pF @ 25V	±20V	-	3.6W (Ta), 39W (Tc)	24 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STD9N80K5	STMicroelectronics	MOSFET N-CH 800V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,104	MOSFET (Metal Oxide)	800V	7A (Tc)	10V	5V @ 100µA	12nC @ 10V	340pF @ 100V	±30V	-	110W (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF5N65M6	STMicroelectronics	MOSFET N-CH 650V 4A TO-220FP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,944	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI2333CDS-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 7.1A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,263,060	MOSFET (Metal Oxide)	12V	7.1A (Tc)	1.8V, 4.5V	1V @ 250µA	25nC @ 4.5V	1225pF @ 6V	±8V	-	1.25W (Ta), 2.5W (Tc)	35 mOhm @ 5.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SPP08N80C3	Infineon Technologies	MOSFET N-CH 800V 8A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 470µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock432,324	MOSFET (Metal Oxide)	800V	8A (Tc)	10V	3.9V @ 470µA	60nC @ 10V	1100pF @ 100V	±20V	-	104W (Tc)	650 mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
FDD6670A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 15A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock433,200	MOSFET (Metal Oxide)	30V	15A (Ta), 66A (Tc)	4.5V, 10V	3V @ 250µA	22nC @ 5V	1755pF @ 15V	±20V	-	3.2W (Ta), 63W (Tc)	8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
STF27N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 20A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 163 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,260	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 250µA	33nC @ 10V	1320pF @ 100V	±25V	-	30W (Tc)	163 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPP320N20N3 G	Infineon Technologies	MOSFET N-CH 200V 34A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock450,468	MOSFET (Metal Oxide)	200V	34A (Tc)	10V	4V @ 90µA	29nC @ 10V	2350pF @ 100V	±20V	-	136W (Tc)	32 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRL3803VPBF	Infineon Technologies	MOSFET N-CH 30V 140A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 71A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,012	MOSFET (Metal Oxide)	30V	140A (Tc)	4.5V, 10V	1V @ 250µA	76nC @ 4.5V	3720pF @ 25V	±16V	-	200W (Tc)	5.5 mOhm @ 71A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDT3N40TF	Fairchild/ON Semiconductor	MOSFET N-CH 400V 2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock409,608	MOSFET (Metal Oxide)	400V	2A (Tc)	10V	5V @ 250µA	6nC @ 10V	225pF @ 25V	±30V	-	2W (Tc)	3.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SI7625DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 35A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock4,048	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	126nC @ 10V	4427pF @ 15V	±20V	-	3.7W (Ta), 52W (Tc)	7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
BSS84AKW,115	Nexperia USA Inc.	MOSFET P-CH 50V 150MA SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock143,580	MOSFET (Metal Oxide)	50V	150mA (Ta)	10V	2.1V @ 250µA	0.35nC @ 5V	36pF @ 25V	±20V	-	260mW (Ta), 830mW (Tc)	7.5 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323-3	SC-70, SOT-323
SQS486CENW-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 40 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8W Package / Case: PowerPAK® 1212-8W	Package: -	Stock53,754	MOSFET (Metal Oxide)	40 V	18A (Tc)	4.5V, 10V	2.2V @ 250µA	53 nC @ 10 V	2950 pF @ 25 V	±20V	-	62.5W (Tc)	5.1mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
2SK583	onsemi	N-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPP60R600CP	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	6.1A (Tc)	10V	3.5V @ 220µA	27 nC @ 10 V	550 pF @ 100 V	±20V	-	60W (Tc)	600mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPD50P03LGBTMA1	Infineon Technologies	MOSFET P-CH 30V 50A TO252-5 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-5 Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	10V	2V @ 250µA	126 nC @ 10 V	6880 pF @ 25 V	±20V	-	150W (Tc)	7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-5	TO-252-5, DPAK (4 Leads + Tab), TO-252AD