Page 115 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF2907ZS-7PPBF
Infineon Technologies

MOSFET N-CH 75V 160A D2PAK7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock105,972
BSO4822
Infineon Technologies

MOSFET N-CH 30V 12.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock156,216
IRFR5410TR
Infineon Technologies

MOSFET P-CH 100V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,448
2N6661-2
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock7,344
BUK7C1R2-40EJ
NXP

MOSFET N-CH 40V 200A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock4,496
AOD456
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 50A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,468
FQU7N20TU
Fairchild/ON Semiconductor

MOSFET N-CH 200V 5.3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,136
IRFR9214TR
Vishay Siliconix

MOSFET P-CH 250V 2.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,144
IPD22N08S2L50ATMA1
Infineon Technologies

MOSFET N-CH 75V 27A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,536
IXTT170N10P
IXYS

MOSFET N-CH 100V 170A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,696
IRL640STRRPBF
Vishay Siliconix

MOSFET N-CH 200V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,984
IRF634STRRPBF
Vishay Siliconix

MOSFET N-CH 250V 8.1A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
AUIRFS4310ZTRL
Infineon Technologies

MOSFET N-CH 100V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock155,400
STB35NF10T4
STMicroelectronics

MOSFET N-CH 100V 40A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock31,968
DMS2120LFWB-7
Diodes Incorporated

MOSFET P-CH 20V 2.9A 8DFN

Package: 8-VDFN Exposed Pad

Stock751,728
IRF1010EPBF
Infineon Technologies

MOSFET N-CH 60V 84A TO-220AB

Package: TO-220-3

Stock543,252
C2M0025120D
Cree/Wolfspeed

MOSFET N-CH 1200V 90A TO-247

Package: TO-247-3

Stock17,262
DMT69M5LCG-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V V-DFN3333

Package: -

Request a Quote
MMFTN3404A
Diotec Semiconductor

MOSFET SOT-23 N 30V 5.6A 0.023?

Package: -

Request a Quote
PJMP210N65EC_T0_00601
Panjit International Inc.

650V/ 390MOHM / 10A/ EASY TO DRI

Package: -

Stock2,355

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF2907ZS-7PPBF	Infineon Technologies	MOSFET N-CH 75V 160A D2PAK7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock105,972	MOSFET (Metal Oxide)	75V	160A (Tc)	10V	4V @ 250µA	260nC @ 10V	7580pF @ 25V	±20V	-	300W (Tc)	3.8 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BSO4822	Infineon Technologies	MOSFET N-CH 30V 12.7A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock156,216	MOSFET (Metal Oxide)	30V	12.7A (Ta)	4.5V, 10V	2V @ 55µA	26.2nC @ 5V	1640pF @ 25V	±20V	-	2.5W (Ta)	10 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR5410TR	Infineon Technologies	MOSFET P-CH 100V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,448	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	66W (Tc)	205 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
2N6661-2	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock7,344	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
BUK7C1R2-40EJ	NXP	MOSFET N-CH 40V 200A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock4,496	MOSFET (Metal Oxide)	40V	-	-	-	-	-	-	-	-	-	-	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
AOD456	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 25V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 12.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,468	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	3V @ 250µA	38nC @ 10V	2220pF @ 12.5V	±20V	-	3W (Ta), 50W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQU7N20TU	Fairchild/ON Semiconductor	MOSFET N-CH 200V 5.3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,136	MOSFET (Metal Oxide)	200V	5.3A (Tc)	10V	5V @ 250µA	10nC @ 10V	400pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	690 mOhm @ 2.65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFR9214TR	Vishay Siliconix	MOSFET P-CH 250V 2.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,144	MOSFET (Metal Oxide)	250V	2.7A (Tc)	10V	4V @ 250µA	14nC @ 10V	220pF @ 25V	±20V	-	50W (Tc)	3 Ohm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD22N08S2L50ATMA1	Infineon Technologies	MOSFET N-CH 75V 27A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 31µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,536	MOSFET (Metal Oxide)	75V	27A (Tc)	5V, 10V	2V @ 31µA	33nC @ 10V	630pF @ 25V	±20V	-	75W (Tc)	50 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTT170N10P	IXYS	MOSFET N-CH 100V 170A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,696	MOSFET (Metal Oxide)	100V	170A (Tc)	10V	5V @ 250µA	198nC @ 10V	6000pF @ 25V	±20V	-	715W (Tc)	9 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IRL640STRRPBF	Vishay Siliconix	MOSFET N-CH 200V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,984	MOSFET (Metal Oxide)	200V	17A (Tc)	4V, 5V	2V @ 250µA	66nC @ 5V	1800pF @ 25V	±10V	-	3.1W (Ta), 125W (Tc)	180 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF634STRRPBF	Vishay Siliconix	MOSFET N-CH 250V 8.1A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	MOSFET (Metal Oxide)	250V	8.1A (Tc)	10V	4V @ 250µA	41nC @ 10V	770pF @ 25V	±20V	-	3.1W (Ta), 74W (Tc)	450 mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFS4310ZTRL	Infineon Technologies	MOSFET N-CH 100V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock155,400	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6860pF @ 50V	±20V	-	250W (Tc)	6 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB35NF10T4	STMicroelectronics	MOSFET N-CH 100V 40A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock31,968	MOSFET (Metal Oxide)	100V	40A (Tc)	10V	4V @ 250µA	55nC @ 10V	1550pF @ 25V	±20V	-	115W (Tc)	35 mOhm @ 17.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMS2120LFWB-7	Diodes Incorporated	MOSFET P-CH 20V 2.9A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN3020B (3x2) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock751,728	MOSFET (Metal Oxide)	20V	2.9A (Ta)	1.8V, 4.5V	1.3V @ 250µA	-	632pF @ 10V	±12V	Schottky Diode (Isolated)	1.5W (Ta)	95 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN3020B (3x2)	8-VDFN Exposed Pad
IRF1010EPBF	Infineon Technologies	MOSFET N-CH 60V 84A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock543,252	MOSFET (Metal Oxide)	60V	84A (Tc)	10V	4V @ 250µA	130nC @ 10V	3210pF @ 25V	±20V	-	200W (Tc)	12 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
C2M0025120D	Cree/Wolfspeed	MOSFET N-CH 1200V 90A TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock17,262	SiCFET (Silicon Carbide)	1200V	90A (Tc)	20V	2.4V @ 10mA	161nC @ 20V	2788pF @ 1000V	+25V, -10V	-	463W (Tc)	34 mOhm @ 50A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMT69M5LCG-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V V-DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.37W (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	14.6A (Ta), 52.1A (Tc)	4.5V, 10V	2.5V @ 250µA	28.4 nC @ 10 V	1406 pF @ 30 V	±20V	-	1.37W (Ta)	8.3mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
MMFTN3404A	Diotec Semiconductor	MOSFET SOT-23 N 30V 5.6A 0.023? FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 0 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.6A (Ta)	4.5V, 10V	2.1V @ 250µA	-	744 pF @ 0 V	±20V	-	1.25W (Ta)	23mOhm @ 5.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
PJMP210N65EC_T0_00601	Panjit International Inc.	650V/ 390MOHM / 10A/ EASY TO DRI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB-L Package / Case: TO-220-3	Package: -	Stock2,355	MOSFET (Metal Oxide)	700 V	19A (Tc)	10V	4V @ 250µA	34 nC @ 10 V	1412 pF @ 400 V	±30V	-	150W (Tc)	210mOhm @ 9.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB-L	TO-220-3
PJF60R290E_T0_00001	Panjit International Inc.	600V N-CHANNEL SUPER JUNCTION MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	1.7A (Ta), 15A (Tc)	10V	4V @ 250µA	40 nC @ 10 V	1013 pF @ 25 V	±20V	-	60W (Tc)	290mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
RF4C100BCTCR	Rohm Semiconductor	MOSFET P-CH 20V 10A HUML2020L8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: HUML2020L8 Package / Case: 8-PowerUDFN	Package: -	Stock8,502	MOSFET (Metal Oxide)	20 V	10A (Ta)	1.8V, 4.5V	1.2V @ 1mA	23.5 nC @ 4.5 V	1660 pF @ 10 V	±8V	-	2W (Ta)	15.6mOhm @ 10A, 4.5V	150°C (TJ)	Surface Mount	HUML2020L8	8-PowerUDFN
RFP6N45	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	450 V	6A (Tc)	10V	4V @ 1mA	-	1500 pF @ 25 V	±20V	-	75W (Tc)	1.25Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
TK40J20D-S1F-O	Toshiba Semiconductor and Storage	MOSFET N-CH 200V 40A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	40A (Ta)	10V	3.5V @ 1mA	100 nC @ 10 V	4300 pF @ 100 V	±20V	-	260W (Tc)	44mOhm @ 20A, 10V	150°C	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
25N06	UMW	TO-252 N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36.2W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,615	MOSFET (Metal Oxide)	60 V	25A (Tc)	4.5V, 10V	2V @ 250µA	21.2 nC @ 10 V	939 pF @ 30 V	±20V	-	36.2W (Tc)	29mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
CPH6411-TL-E	Sanyo	N-CHANNL SILICON MOSFET FOR ULTR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6A (Ta)	-	-	13 nC @ 4.5 V	1200 pF @ 10 V	-	-	1.6W (Ta)	20mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
2SK3818-DL-E	Sanyo	N-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB65R155CFD7ATMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	15A (Tc)	10V	4.5V @ 320µA	28 nC @ 10 V	1283 pF @ 400 V	±20V	-	77W (Tc)	155mOhm @ 6.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB