Page 1160 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI11N60C3AAKSA2
Infineon Technologies

MOSFET N-CH I2PAK

Package: -

Stock3,040
IRF6716MTR1PBF
Infineon Technologies

MOSFET N-CH 25V 39A DIRECTFET

Package: DirectFET? Isometric MX

Stock4,240
IRF7534D1
Infineon Technologies

MOSFET P-CH 20V 4.3A MICRO8

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock5,120
IRFU18N15D
Infineon Technologies

MOSFET N-CH 150V 18A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,080
RJK6025DPD-00#J2
Renesas Electronics America

MOSFET N-CH 600V 1A MP3A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,240
NTB52N10T4G
ON Semiconductor

MOSFET N-CH 100V 52A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock849,576
NTY100N10G
ON Semiconductor

MOSFET N-CH 100V 123A TO-264

Package: TO-264-3, TO-264AA

Stock3,776
NTD78N03G
ON Semiconductor

MOSFET N-CH 25V 11.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock17,016
BSP304A,126
NXP

MOSFET P-CH 300V 0.17A SOT54

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2,800
APT26M100JCU3
Microsemi Corporation

MOSFET N-CH 1000V 26A SOT227

Package: SOT-227-4, miniBLOC

Stock7,520
IXFR24N100
IXYS

MOSFET N-CH 1KV 22A ISOPLUS247

Package: ISOPLUS247?

Stock5,088
IXTT24P20
IXYS

MOSFET P-CH 200V 24A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock5,968
IRF9520STRRPBF
Vishay Siliconix

MOSFET P-CH 100V 6.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,800
IRFU9020PBF
Vishay Siliconix

MOSFET P-CH 50V 9.9A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock122,760
TN2501N8-G
Microchip Technology

MOSFET N-CH 18V 400MA SOT89-3

Package: TO-243AA

Stock30,000
STU10P6F6
STMicroelectronics

MOSFET P-CH 60V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock144,000
STL85N6F3
STMicroelectronics

MOSFET N-CH 60V 85A POWERFLAT5X6

Package: 8-PowerVDFN

Stock4,592
STP34NM60N
STMicroelectronics

MOSFET N-CH 600V 29A TO-220

Package: TO-220-3

Stock446,520
SI7439DP-T1-GE3
Vishay Siliconix

MOSFET P-CH 150V 3A PPAK SO-8

Package: PowerPAK? SO-8

Stock412,140
IRF7604TR
Infineon Technologies

MOSFET P-CH 20V 3.6A MICRO8

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI11N60C3AAKSA2	Infineon Technologies	MOSFET N-CH I2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,040	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF6716MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 39A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock4,240	MOSFET (Metal Oxide)	25V	39A (Ta), 180A (Tc)	4.5V, 10V	2.4V @ 100µA	59nC @ 4.5V	5150pF @ 13V	±20V	-	3.6W (Ta), 78W (Tc)	1.6 mOhm @ 40A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF7534D1	Infineon Technologies	MOSFET P-CH 20V 4.3A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8? Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock5,120	MOSFET (Metal Oxide)	20V	4.3A (Ta)	2.5V, 4.5V	1.2V @ 250µA	15nC @ 5V	1066pF @ 10V	±12V	Schottky Diode (Isolated)	1.25W (Ta)	55 mOhm @ 4.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8?	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRFU18N15D	Infineon Technologies	MOSFET N-CH 150V 18A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,080	MOSFET (Metal Oxide)	150V	18A (Tc)	10V	5.5V @ 250µA	43nC @ 10V	900pF @ 25V	±30V	-	110W (Tc)	125 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
RJK6025DPD-00#J2	Renesas Electronics America	MOSFET N-CH 600V 1A MP3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 37.5pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 29.7W (Tc) Rds On (Max) @ Id, Vgs: 17.5 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,240	MOSFET (Metal Oxide)	600V	1A (Ta)	10V	5V @ 1mA	5nC @ 10V	37.5pF @ 25V	±30V	-	29.7W (Tc)	17.5 Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	MP-3A	TO-252-3, DPak (2 Leads + Tab), SC-63
NTB52N10T4G	ON Semiconductor	MOSFET N-CH 100V 52A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 178W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock849,576	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	4V @ 250µA	135nC @ 10V	3150pF @ 25V	±20V	-	2W (Ta), 178W (Tc)	30 mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTY100N10G	ON Semiconductor	MOSFET N-CH 100V 123A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,776	MOSFET (Metal Oxide)	100V	123A (Tc)	10V	4V @ 250µA	350nC @ 10V	10110pF @ 25V	±20V	-	313W (Tc)	10 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
NTD78N03G	ON Semiconductor	MOSFET N-CH 25V 11.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock17,016	MOSFET (Metal Oxide)	25V	11.4A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 4.5V	2250pF @ 12V	±20V	-	1.4W (Ta), 64W (Tc)	6 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
BSP304A,126	NXP	MOSFET P-CH 300V 0.17A SOT54 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.55V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 17 Ohm @ 170mA, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2,800	MOSFET (Metal Oxide)	300V	170mA (Ta)	10V	2.55V @ 1mA	-	90pF @ 25V	±20V	-	1W (Ta)	17 Ohm @ 170mA, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
APT26M100JCU3	Microsemi Corporation	MOSFET N-CH 1000V 26A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,520	MOSFET (Metal Oxide)	1000V	26A (Tc)	10V	5V @ 2.5mA	305nC @ 10V	7868pF @ 25V	±30V	-	543W (Tc)	396 mOhm @ 18A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXFR24N100	IXYS	MOSFET N-CH 1KV 22A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock5,088	MOSFET (Metal Oxide)	1000V	22A (Tc)	10V	5.5V @ 8mA	267nC @ 10V	8700pF @ 25V	±20V	-	416W (Tc)	390 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTT24P20	IXYS	MOSFET P-CH 200V 24A TO-268 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock5,968	MOSFET (Metal Oxide)	200V	24A (Tc)	10V	5V @ 250µA	150nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	110 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IRF9520STRRPBF	Vishay Siliconix	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,800	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	600 mOhm @ 4.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU9020PBF	Vishay Siliconix	MOSFET P-CH 50V 9.9A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock122,760	MOSFET (Metal Oxide)	50V	9.9A (Tc)	10V	4V @ 250µA	14nC @ 10V	490pF @ 25V	±20V	-	42W (Tc)	280 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
TN2501N8-G	Microchip Technology	MOSFET N-CH 18V 400MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 18V Current - Continuous Drain (Id) @ 25°C: 400mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 3V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 200mA, 3V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock30,000	MOSFET (Metal Oxide)	18V	400mA (Tj)	1.2V, 3V	1V @ 1mA	-	110pF @ 15V	±20V	-	1.6W (Tc)	2.5 Ohm @ 200mA, 3V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
STU10P6F6	STMicroelectronics	MOSFET P-CH 60V 10A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock144,000	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	6.4nC @ 10V	340pF @ 48V	±20V	-	35W (Tc)	160 mOhm @ 5A, 10V	175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
STL85N6F3	STMicroelectronics	MOSFET N-CH 60V 85A POWERFLAT5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (6x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,592	MOSFET (Metal Oxide)	60V	85A (Tc)	10V	2V @ 250µA	60nC @ 10V	3400pF @ 25V	±20V	-	80W (Tc)	5.7 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (6x5)	8-PowerVDFN
STP34NM60N	STMicroelectronics	MOSFET N-CH 600V 29A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2722pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock446,520	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	4V @ 250µA	80nC @ 10V	2722pF @ 100V	±25V	-	250W (Tc)	105 mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SI7439DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 150V 3A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock412,140	MOSFET (Metal Oxide)	150V	3A (Ta)	6V, 10V	4V @ 250µA	135nC @ 10V	-	±20V	-	1.9W (Ta)	90 mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRF7604TR	Infineon Technologies	MOSFET P-CH 20V 3.6A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro8™ Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.6A (Ta)	-	700mV @ 250µA (Min)	20 nC @ 4.5 V	590 pF @ 15 V	-	-	-	90mOhm @ 2.4A, 4.5V	-	Surface Mount	Micro8™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
PJE8408_R1_00001	Panjit International Inc.	SOT-523, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Flat Leads Package / Case: SC-89, SOT-490	Package: -	Stock894,114	MOSFET (Metal Oxide)	20 V	500mA (Ta)	1.2V, 4.5V	900mV @ 250µA	1.4 nC @ 4.5 V	67 pF @ 10 V	±10V	-	300mW (Ta)	400mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523 Flat Leads	SC-89, SOT-490
STS2306E-ML	MOSLEADER	Single-N 20V 6.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK9M5R0-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 85A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +16V, -10V FET Feature: - Power Dissipation (Max): 83W Rds On (Max) @ Id, Vgs: 5mOhm @ 85A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock4,464	MOSFET (Metal Oxide)	40 V	85A (Tj)	10V	-	28 nC @ 10 V	-	+16V, -10V	-	83W	5mOhm @ 85A, 10V	175°C	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
SIHFPS38N60L-GE3	Vishay Siliconix	POWER MOSFET SUPER-247, 150 M @ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247™ (TO-274AA) Package / Case: TO-274AA	Package: -	Stock1,440	MOSFET (Metal Oxide)	600 V	38A (Tc)	10V	5V @ 250µA	320 nC @ 10 V	7990 pF @ 25 V	±30V	-	540W (Tc)	150mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247™ (TO-274AA)	TO-274AA
2SK2011	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002HWX	Nexperia USA Inc.	2N7002HW/SOT323/SC-70 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock67,434	MOSFET (Metal Oxide)	60 V	310mA (Ta)	4.5V, 10V	2.4V @ 250µA	0.5 nC @ 4.5 V	34 pF @ 10 V	±20V	-	310mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
DI025N06PT-AQ	Diotec Semiconductor	MOSFET POWERQFN 3X3 65V 0.02OHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	65 V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	-	406 pF @ 30 V	±20V	-	25W (Tc)	20mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
SUP80090E-GE3	Vishay Siliconix	MOSFET N-CH 150V 128A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	128A (Tc)	7.5V, 10V	5V @ 250µA	95 nC @ 10 V	3425 pF @ 75 V	±20V	-	375W (Tc)	9.4mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3