Page 1163 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7799L2TR1PBF
Infineon Technologies

MOSFET N-CH 250V 375A DIRECTFET

Package: DirectFET? Isometric L8

Stock5,984
IPB048N06LGATMA1
Infineon Technologies

MOSFET N-CH 60V 100A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
IRFS31N20DTRL
Infineon Technologies

MOSFET N-CH 200V 31A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock190,872
GP2M008A060HG
Global Power Technologies Group

MOSFET N-CH 600V 7.5A TO220

Package: TO-220-3

Stock5,952
SUD50N10-18P-E3
Vishay Siliconix

MOSFET N-CH 100V 8.2A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,160
IRFR430ATRRPBF
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,256
BUK7628-100A/C,118
NXP

MOSFET N-CH 100V D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,656
NTB30N06LG
ON Semiconductor

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock459,384
FQP4N90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 4.2A TO-220

Package: TO-220-3

Stock127,464
IRFIB7N50A
Vishay Siliconix

MOSFET N-CH 500V 6.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock115,284
AUIRFS4115-7P
Infineon Technologies

MOSFET N-CH 150V 105A AUTO

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock7,824
IXFR90N20Q
IXYS

MOSFET N-CH 200V ISOPLUS247

Package: ISOPLUS247?

Stock7,920
APT14M100S
Microsemi Corporation

MOSFET N-CH 1000V 14A D3PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,648
IXTQ150N06P
IXYS

MOSFET N-CH 60V 150A TO-3P

Package: TO-3P-3, SC-65-3

Stock103,464
TK7A90E,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 900V TO220SIS

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,912
DMP32D9UFZ-7B
Diodes Incorporated

MOSFET P-CH 30V 0.2A X2-DFN0606

Package: 3-XFDFN

Stock72,972
MMBF170
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,702,016
HAT1091C-EL-E
Renesas

HAT1091C-EL-E - SILICON P CHANNE

Package: -

Request a Quote
HAF2012-92L
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
SSM3J374R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4A SOT23F

Package: -

Stock45,594

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7799L2TR1PBF	Infineon Technologies	MOSFET N-CH 250V 375A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6714pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 4.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	Package: DirectFET? Isometric L8	Stock5,984	MOSFET (Metal Oxide)	250V	375A (Tc)	10V	5V @ 250µA	165nC @ 10V	6714pF @ 25V	±30V	-	4.3W (Ta), 125W (Tc)	38 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET? Isometric L8
IPB048N06LGATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640	MOSFET (Metal Oxide)	60V	100A (Tc)	4.5V, 10V	2V @ 270µA	225nC @ 10V	7600pF @ 30V	±20V	-	300W (Tc)	4.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS31N20DTRL	Infineon Technologies	MOSFET N-CH 200V 31A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock190,872	MOSFET (Metal Oxide)	200V	31A (Tc)	10V	5.5V @ 250µA	110nC @ 10V	2370pF @ 25V	±30V	-	3.1W (Ta), 200W (Tc)	82 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GP2M008A060HG	Global Power Technologies Group	MOSFET N-CH 600V 7.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,952	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	5V @ 250µA	23nC @ 10V	1063pF @ 25V	±30V	-	120W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SUD50N10-18P-E3	Vishay Siliconix	MOSFET N-CH 100V 8.2A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136.4W (Tc) Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,160	MOSFET (Metal Oxide)	100V	8.2A (Ta), 50A (Tc)	10V	5V @ 250µA	75nC @ 10V	2600pF @ 50V	±20V	-	3W (Ta), 136.4W (Tc)	18.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR430ATRRPBF	Vishay Siliconix	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,256	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	490pF @ 25V	±30V	-	110W (Tc)	1.7 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7628-100A/C,118	NXP	MOSFET N-CH 100V D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,656	MOSFET (Metal Oxide)	100V	47A (Tc)	10V	4V @ 1mA	-	3100pF @ 25V	±20V	-	166W (Tc)	28 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB30N06LG	ON Semiconductor	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 15A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock459,384	MOSFET (Metal Oxide)	60V	30A (Ta)	5V	2V @ 250µA	32nC @ 5V	1150pF @ 25V	±15V	-	88.2W (Tc)	46 mOhm @ 15A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQP4N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 4.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock127,464	MOSFET (Metal Oxide)	900V	4.2A (Tc)	10V	5V @ 250µA	30nC @ 10V	1100pF @ 25V	±30V	-	140W (Tc)	3.3 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRFIB7N50A	Vishay Siliconix	MOSFET N-CH 500V 6.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock115,284	MOSFET (Metal Oxide)	500V	6.6A (Tc)	10V	4V @ 250µA	52nC @ 10V	1423pF @ 25V	±30V	-	60W (Tc)	520 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
AUIRFS4115-7P	Infineon Technologies	MOSFET N-CH 150V 105A AUTO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 63A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock7,824	MOSFET (Metal Oxide)	150V	105A (Tc)	10V	5V @ 250µA	110nC @ 10V	5320pF @ 50V	±20V	-	380W (Tc)	11.8 mOhm @ 63A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab)
IXFR90N20Q	IXYS	MOSFET N-CH 200V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,920	MOSFET (Metal Oxide)	200V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
APT14M100S	Microsemi Corporation	MOSFET N-CH 1000V 14A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 880 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,648	MOSFET (Metal Oxide)	1000V	14A (Tc)	10V	5V @ 1mA	120nC @ 10V	3965pF @ 25V	±30V	-	500W (Tc)	880 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTQ150N06P	IXYS	MOSFET N-CH 60V 150A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,464	MOSFET (Metal Oxide)	60V	150A (Tc)	10V	5V @ 250µA	118nC @ 10V	3000pF @ 25V	±20V	-	480W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
TK7A90E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,912	MOSFET (Metal Oxide)	900V	7A (Ta)	10V	4V @ 700µA	32nC @ 10V	1350pF @ 25V	±30V	-	45W (Tc)	2 Ohm @ 3.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack, Isolated Tab
DMP32D9UFZ-7B	Diodes Incorporated	MOSFET P-CH 30V 0.2A X2-DFN0606 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.5pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 390mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN0606-3 Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock72,972	MOSFET (Metal Oxide)	30V	200mA (Ta)	1.2V, 10V	1V @ 250µA	0.35nC @ 4.5V	22.5pF @ 15V	±10V	-	390mW (Ta)	5 Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN0606-3	3-XFDFN
MMBF170	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,702,016	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	300mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
HAT1091C-EL-E	Renesas	HAT1091C-EL-E - SILICON P CHANNE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 800mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-CMFPAK Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.5A (Ta)	2.5V, 4V	1.4V @ 1mA	2.6 nC @ 4.5 V	200 pF @ 10 V	±12V	-	830mW (Ta)	175mOhm @ 800mA, 4.5V	150°C	Surface Mount	6-CMFPAK	6-SMD, Flat Leads
HAF2012-92L	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J374R-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 4A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: -	Stock45,594	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	2V @ 100µA	5.9 nC @ 10 V	280 pF @ 15 V	+10V, -20V	-	1W (Ta)	71mOhm @ 3A, 10V	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
NVTFWS030N06CTAG	onsemi	MOSFET N-CH 60V 6A/19A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	6A (Ta), 19A (Tc)	10V	4V @ 13µA	4.7 nC @ 10 V	255 pF @ 30 V	±20V	-	2.5W (Ta), 23W (Tc)	29.7mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
PJMH120N60EC_T0_00601	Panjit International Inc.	600V/ 120MOHM / 30A/ EASY TO DRI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 235W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: -	Stock5,400	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	4V @ 250µA	51 nC @ 10 V	1960 pF @ 400 V	±30V	-	235W (Tc)	120mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
IPD90N03S4L02ATMA1	Infineon Technologies	MOSFET N-CH 30V 90A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock156,984	MOSFET (Metal Oxide)	30 V	90A (Tc)	4.5V, 10V	2.2V @ 90µA	140 nC @ 10 V	9750 pF @ 25 V	±16V	-	136W (Tc)	2.2mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
AUIRFR3504ZTRL	Infineon Technologies	MOSFET N-CH 40V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	42A (Tc)	-	4V @ 250µA	45 nC @ 10 V	1510 pF @ 25 V	-	-	90W (Tc)	9mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHP4N80E-BE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	800 V	4.3A (Tc)	10V	4V @ 250µA	32 nC @ 10 V	622 pF @ 100 V	±30V	-	69W (Tc)	1.27Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF610S2497	Harris Corporation	3.3A 200V 1.500 OHM N-CHANNEL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMTH6006SPS-13	Diodes Incorporated	MOSFET N-CH 60V PWRDI5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 17.8A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.94W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	17.8A (Ta), 100A (Tc)	10V	4V @ 250µA	27.9 nC @ 10 V	1721 pF @ 30 V	±20V	-	2.94W (Ta), 107W (Tc)	6.2mOhm @ 10.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
AON6912L_121	Alpha & Omega Semiconductor Inc.	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-