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Infineon Technologies |
MOSFET N-CH 60V 120A PG-TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,272 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 140µA | 195nC @ 10V | 15750pF @ 25V | ±20V | - | 188W (Tc) | 2.8 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
- Vgs(th) (Max) @ Id: 2.4V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 9.2A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,888 |
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MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | ±25V | - | 2.5W (Ta) | 13.3 mOhm @ 9.2A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia USA Inc. |
MOSFET N-CH TO-236AB
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,072 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 8.1A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.05A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,752 |
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MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1000pF @ 25V | ±30V | - | 38W (Tc) | 450 mOhm @ 4.05A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 55V 145A ISOPLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220?
- Package / Case: ISOPLUS220?
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Package: ISOPLUS220? |
Stock5,632 |
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MOSFET (Metal Oxide) | 55V | 145A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 9800pF @ 25V | ±20V | - | 160W (Tc) | 3.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 2.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,504 |
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MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 460pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 2.7 Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,168 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 67nC @ 10V | 1900pF @ 25V | ±20V | - | 150W (Tc) | 28 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 30V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,024 |
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MOSFET (Metal Oxide) | 30V | 14.5A (Tc) | - | 2.5V @ 250µA | 40nC @ 4.5V | 4490pF @ 12V | - | - | - | 4 mOhm @ 30A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
40V N CH MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,712 |
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- | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 0.45A TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock46,320 |
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MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 2.4V @ 1mA | - | 75pF @ 18V | ±20V | - | 700mW (Ta) | 2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1652pF @ 50V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220S
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock2,336 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4.5V @ 250µA | 33nC @ 10V | 1652pF @ 50V | ±30V | - | 45W (Tc) | 750 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 1.2KV TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 122nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 400V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 318W (Tc)
- Rds On (Max) @ Id, Vgs: 69 mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247?
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,080 |
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SiCFET (Silicon Carbide) | 1200V | 65A (Tc) | 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | +25V, -10V | - | 318W (Tc) | 69 mOhm @ 40A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247? | TO-247-3 |
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Diodes Incorporated |
MOSFET P-CH 40V 6A 8-SO
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.52W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock144,060 |
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MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 33.7nC @ 10V | 1640pF @ 20V | ±20V | - | 1.52W (Ta) | 25 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 39A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Package: DirectFET? Isometric MX |
Stock3,744 |
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MOSFET (Metal Oxide) | 25V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 2.4V @ 100µA | 59nC @ 4.5V | 5150pF @ 13V | ±20V | - | 3.6W (Ta), 78W (Tc) | 1.6 mOhm @ 40A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
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Nexperia USA Inc. |
MOSFET N-CH 60V 0.2A TO-236AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250A
- Gate Charge (Qg) (Max) @ Vgs: 0.51nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,448 |
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MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 10V | 1.5V @ 250A | 0.51nC @ 4.5V | 47pF @ 30V | ±20V | - | 300mW (Ta), 1.06W (Tc) | 4.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
N-CHANNEL MOSFET, SOT-23 PACKAGE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,816 |
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MOSFET (Metal Oxide) | 30V | 3.16A (Ta) | 10V | 3V @ 250µA | 4.5nC @ 5V | 305pF @ 15V | ±20V | - | 750mW | 65 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 75V 100A SMP-FD
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18,276 |
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MOSFET (Metal Oxide) | 75V | 100A (Ta) | 4V, 10V | - | 280nC @ 10V | 13400pF @ 20V | ±20V | - | 90W (Tc) | 8 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics Corporation |
MOSFET N-CH 30V 40A 8WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 40A (Ta) | - | - | 17 nC @ 4.5 V | 2560 pF @ 10 V | - | - | 45W (Tc) | 4.2mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -60.00A, -
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 102W (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock10,959 |
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MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 160 nC @ 10 V | 8400 pF @ 30 V | ±20V | - | 102W (Tc) | 12mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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International Rectifier |
MOSFET N-CH 55V 135A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 55 V | 135A (Tc) | - | 4V @ 250µA | 230 nC @ 10 V | 5110 pF @ 25 V | - | - | 200W (Tc) | 4.7mOhm @ 104A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
160A, 40V N-CHANNEL, MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7320 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 4V @ 250µA | 170 nC @ 10 V | 7320 pF @ 25 V | ±20V | - | 300W (Tc) | 2.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET P-CH 60V 4.3A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 166µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 19W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock6,903 |
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MOSFET (Metal Oxide) | 60 V | 4.3A (Tc) | 10V | 4V @ 166µA | 6.7 nC @ 10 V | 260 pF @ 30 V | ±20V | - | 19W (Tc) | 400mOhm @ 4.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V PWRDI5060
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 89.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1572 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 12.9A (Ta), 89.5A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 29.3 nC @ 10 V | 1572 pF @ 30 V | ±20V | - | 2.8W (Ta), 136W (Tc) | 10mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SO-8 T&R 2
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock18,165 |
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MOSFET (Metal Oxide) | 30 V | 11A (Ta), 32A (Tc) | 4.5V, 10V | 3V @ 250µA | 46 nC @ 10 V | 2380 pF @ 15 V | ±25V | - | 1.4W (Ta) | 10mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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EPC |
GANFET N-CH 80V 18A DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
- Vgs (Max): +5.75V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Stock175,029 |
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GaNFET (Gallium Nitride) | 80 V | 18A (Ta) | 5V | 2.5V @ 3mA | 4 nC @ 5 V | 415 pF @ 50 V | +5.75V, -4V | - | - | 17mOhm @ 11A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Goford Semiconductor |
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock13,107 |
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MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 10V | 3V @ 250µA | 37 nC @ 10 V | 3384 pF @ 30 V | ±20V | - | 100W (Tc) | 32mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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GaNPower |
GaNFET N-CH 650V 30A TO263-5L
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 400 V
- Vgs (Max): +7.5V, -12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 650 V | 30A | 6V | 1.4V @ 3.5mA | 5.8 nC @ 6 V | 241 pF @ 400 V | +7.5V, -12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
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Taiwan Semiconductor Corporation |
40V, 54A, SINGLE N-CHANNEL POWER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 46.8W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock13,083 |
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MOSFET (Metal Oxide) | 40 V | 15A (Ta), 54A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 23 nC @ 10 V | 1446 pF @ 25 V | ±16V | - | 46.8W (Tc) | 7mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFNU (5x6) | 8-PowerTDFN |