Page 1165 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7220GTRPBF
Infineon Technologies

MOSFET P-CH 14V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,984
BUK9216-100EJ
Nexperia USA Inc.

MOSFET N-CH 100V DPAK

Package: -

Stock5,328
NTD6600NT4G
ON Semiconductor

MOSFET N-CH 100V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock721,956
FQI2N80TU
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2.4A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,256
FQB16N15TM
Fairchild/ON Semiconductor

MOSFET N-CH 150V 16.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,064
FDP14AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 67A TO-220AB

Package: TO-220-3

Stock6,352
IRFR9210TRL
Vishay Siliconix

MOSFET P-CH 200V 1.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,488
IRF530L
Vishay Siliconix

MOSFET N-CH 100V 14A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,736
STW11NB80
STMicroelectronics

MOSFET N-CH 800V 11A TO-247

Package: TO-247-3

Stock107,148
BSS816NWH6327XTSA1
Infineon Technologies

MOSFET N-CH 20V 1.4A SOT323

Package: SC-70, SOT-323

Stock2,000
IXFN23N100
IXYS

MOSFET N-CH 1000V 23A SOT-227B

Package: SOT-227-4, miniBLOC

Stock3,424
CSD22206W
Texas Instruments

8V P-CHANNEL FEMTOFET

Package: -

Stock3,568
FCPF165N65S3L1
Fairchild/ON Semiconductor

MOSFET N-CH 650V 19A TO220F-3

Package: TO-220-3 Full Pack

Stock3,120
SIRA34DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock3,360
IRFR1N60ATRPBF
Vishay Siliconix

MOSFET N-CH 600V 1.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,152,000
IRFS3206PBF
Infineon Technologies

MOSFET N-CH 60V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock588,156
SISH892BDN-T1-GE3
Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

Package: -

Stock3,207
AOT600A60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO220

Package: -

Request a Quote
DMT10H010LSSQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

Package: -

Request a Quote
MSJP20N65-BP
Micro Commercial Co

MOSFET N-CH TO220AB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7220GTRPBF	Infineon Technologies	MOSFET P-CH 14V 11A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 14V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 8075pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,984	MOSFET (Metal Oxide)	14V	11A (Ta)	2.5V, 4.5V	600mV @ 250µA	125nC @ 5V	8075pF @ 10V	±12V	-	2.5W (Ta)	12 mOhm @ 11A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BUK9216-100EJ	Nexperia USA Inc.	MOSFET N-CH 100V DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTD6600NT4G	ON Semiconductor	MOSFET N-CH 100V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock721,956	MOSFET (Metal Oxide)	100V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	700pF @ 25V	±20V	-	1.28W (Ta), 56.6W (Tc)	146 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQI2N80TU	Fairchild/ON Semiconductor	MOSFET N-CH 800V 2.4A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 85W (Tc) Rds On (Max) @ Id, Vgs: 6.3 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,256	MOSFET (Metal Oxide)	800V	2.4A (Tc)	10V	5V @ 250µA	15nC @ 10V	550pF @ 25V	±30V	-	3.13W (Ta), 85W (Tc)	6.3 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FQB16N15TM	Fairchild/ON Semiconductor	MOSFET N-CH 150V 16.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 108W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,064	MOSFET (Metal Oxide)	150V	16.4A (Tc)	10V	4V @ 250µA	30nC @ 10V	910pF @ 25V	±25V	-	3.75W (Ta), 108W (Tc)	160 mOhm @ 8.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDP14AN06LA0	Fairchild/ON Semiconductor	MOSFET N-CH 60V 67A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,352	MOSFET (Metal Oxide)	60V	10A (Ta), 67A (Tc)	5V, 10V	3V @ 250µA	31nC @ 5V	2900pF @ 25V	±20V	-	125W (Tc)	11.6 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR9210TRL	Vishay Siliconix	MOSFET P-CH 200V 1.9A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,488	MOSFET (Metal Oxide)	200V	1.9A (Tc)	10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	3 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF530L	Vishay Siliconix	MOSFET N-CH 100V 14A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,736	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	26nC @ 10V	670pF @ 25V	±20V	-	-	160 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
STW11NB80	STMicroelectronics	MOSFET N-CH 800V 11A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock107,148	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 250µA	70nC @ 10V	2900pF @ 25V	±30V	-	190W (Tc)	800 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BSS816NWH6327XTSA1	Infineon Technologies	MOSFET N-CH 20V 1.4A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs(th) (Max) @ Id: 0.75V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock2,000	MOSFET (Metal Oxide)	20V	1.4A (Ta)	1.8V, 2.5V	0.75V @ 3.7µA	0.6nC @ 2.5V	180pF @ 10V	±8V	-	500mW (Ta)	160 mOhm @ 1.4A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
IXFN23N100	IXYS	MOSFET N-CH 1000V 23A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,424	MOSFET (Metal Oxide)	1000V	23A	10V	5V @ 8mA	-	-	±20V	-	600W (Tc)	-	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
CSD22206W	Texas Instruments	8V P-CHANNEL FEMTOFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,568	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCPF165N65S3L1	Fairchild/ON Semiconductor	MOSFET N-CH 650V 19A TO220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 400V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,120	MOSFET (Metal Oxide)	650V	19A (Tc)	10V	4.5V @ 1.9mA	35nC @ 10V	1415pF @ 400V	±30V	-	35W (Tc)	165 mOhm @ 9.5A, 10V	-55°C ~ 150°C	Through Hole	TO-220F-3	TO-220-3 Full Pack
SIRA34DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 31.25W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,360	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.4V @ 250µA	25nC @ 10V	1100pF @ 15V	+20V, -16V	-	3.3W (Ta), 31.25W (Tc)	6.7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRFR1N60ATRPBF	Vishay Siliconix	MOSFET N-CH 600V 1.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,152,000	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	229pF @ 25V	±30V	-	36W (Tc)	7 Ohm @ 840mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFS3206PBF	Infineon Technologies	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock588,156	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6540pF @ 50V	±20V	-	300W (Tc)	3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SISH892BDN-T1-GE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.4W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock3,207	MOSFET (Metal Oxide)	100 V	6.8A (Ta), 20A (Tc)	4.5V, 10V	2.4V @ 250µA	26.5 nC @ 10 V	1110 pF @ 50 V	±20V	-	3.4W (Ta), 29W (Tc)	30.4mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
AOT600A60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27.5W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	8A (Tc)	10V	3.5V @ 250µA	11.5 nC @ 10 V	608 pF @ 100 V	±20V	-	27.5W (Tc)	600mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
DMT10H010LSSQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V SO-8 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4166 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	12A (Ta)	4.5V, 10V	2.8V @ 250µA	58.4 nC @ 10 V	4166 pF @ 50 V	±20V	-	1.9W (Ta)	9.5mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
MSJP20N65-BP	Micro Commercial Co	MOSFET N-CH TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB (H) Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4.5V @ 250µA	39 nC @ 10 V	1724 pF @ 100 V	±30V	-	151W (Tc)	170mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB (H)	TO-220-3
IPDQ60R010S7XTMA1	Infineon Technologies	HIGH POWER_NEW PG-HDSOP-22 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Stock321	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	4.5V @ 3.08mA	318 nC @ 12 V	11987 pF @ 300 V	±20V	-	694W (Tc)	10mOhm @ 50A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
MTY25N60E	onsemi	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10220 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	25A	10V	4V @ 250µA	350 nC @ 10 V	10220 pF @ 25 V	±20V	-	300W (Tc)	210mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
SIRA52ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 40V 41.6A/131A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock51,276	MOSFET (Metal Oxide)	40 V	41.6A (Ta), 131A (Tc)	4.5V, 10V	2.4V @ 250µA	100 nC @ 10 V	5500 pF @ 20 V	+20V, -16V	-	4.8W (Ta), 48W (Tc)	1.63mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRLML5203TRPBF-ML	MOSLEADER	P -30V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC017SMA120B4	Microchip Technology	MOSFET SIC 1200V 17 MOHM TO-247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.7V @ 4.5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 249 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 1000 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock105	SiCFET (Silicon Carbide)	1200 V	113A (Tc)	20V	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	5280 pF @ 1000 V	+22V, -10V	-	455W (Tc)	22mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
2SK1432	onsemi	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIR668ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 100V 93.6A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock8,112	MOSFET (Metal Oxide)	100 V	93.6A (Tc)	7.5V, 10V	4V @ 250µA	81 nC @ 10 V	3750 pF @ 50 V	±20V	-	104W (Tc)	4.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
FDZ451PZ-P	onsemi	MOSFET P-CH 20V 6WLCSP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-