Page 1166 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7705GTRPBF
Infineon Technologies

MOSFET P-CH 30V 8A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock7,488
SPI47N10L
Infineon Technologies

MOSFET N-CH 100V 47A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock9,888
IRF6611TR1PBF
Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

Package: DirectFET? Isometric MX

Stock6,752
IRF3704L
Infineon Technologies

MOSFET N-CH 20V 77A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock18,960
IRLU024N
Infineon Technologies

MOSFET N-CH 55V 17A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock219,108
2SK4198FS
ON Semiconductor

MOSFET N-CH 600V 4A TO-220F-3

Package: TO-220-3

Stock3,200
NP22N055SLE-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 22A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock158,064
FQI2NA90TU
Fairchild/ON Semiconductor

MOSFET N-CH 900V 2.8A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,592
IRLS630A
Fairchild/ON Semiconductor

MOSFET N-CH 200V 6.5A TO-220F

Package: TO-220-3

Stock5,632
IPP65R600E6XKSA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO220

Package: TO-220-3

Stock3,584
IRF7490PBF
Infineon Technologies

MOSFET N-CH 100V 5.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,008
NVMFS5C423NLT3G
ON Semiconductor

MOSFET N-CH 40V 126A SO8FL

Package: 8-PowerTDFN

Stock2,544
SIR864DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK 8SO

Package: PowerPAK? SO-8

Stock3,424
MCH3376-TL-E
ON Semiconductor

MOSFET P-CH 8A 20V MCPH3

Package: 3-SMD, Flat Leads

Stock4,960
TSM900N06CH X0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-251-3 Stub Leads, IPak

Stock7,824
NVTFS5C466NLTAG
ON Semiconductor

MOSFET N-CH 40V 51A 8WDFN

Package: 8-PowerWDFN

Stock3,856
IXTP4N65X2
IXYS

MOSFET N-CH 650V 4A X2 TO-220

Package: TO-220-3

Stock6,336
R6015KNJTL
Rohm Semiconductor

NCH 600V 15A POWER MOSFET

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock12,744
C3M0016120D
Wolfspeed, Inc.

SICFET N-CH 1200V 115A TO247-3

Package: -

Stock4,692
IPD65R420CFDATMA2
Infineon Technologies

MOSFET N-CH 650V 8.7A TO252-3

Package: -

Stock7,470

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7705GTRPBF	Infineon Technologies	MOSFET P-CH 30V 8A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock7,488	MOSFET (Metal Oxide)	30V	8A (Ta)	4.5V, 10V	2.5V @ 250µA	88nC @ 10V	2774pF @ 25V	±20V	-	1.5W (Ta)	18 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
SPI47N10L	Infineon Technologies	MOSFET N-CH 100V 47A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 175W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock9,888	MOSFET (Metal Oxide)	100V	47A (Tc)	4.5V, 10V	2V @ 2mA	135nC @ 10V	2500pF @ 25V	±20V	-	175W (Tc)	26 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF6611TR1PBF	Infineon Technologies	MOSFET N-CH 30V 32A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock6,752	MOSFET (Metal Oxide)	30V	32A (Ta), 150A (Tc)	4.5V, 10V	2.25V @ 250µA	56nC @ 4.5V	4860pF @ 15V	±20V	-	3.9W (Ta), 89W (Tc)	2.6 mOhm @ 27A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IRF3704L	Infineon Technologies	MOSFET N-CH 20V 77A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock18,960	MOSFET (Metal Oxide)	20V	77A (Tc)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	±20V	-	87W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLU024N	Infineon Technologies	MOSFET N-CH 55V 17A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock219,108	MOSFET (Metal Oxide)	55V	17A (Tc)	4V, 10V	2V @ 250µA	15nC @ 5V	480pF @ 25V	±16V	-	45W (Tc)	65 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
2SK4198FS	ON Semiconductor	MOSFET N-CH 600V 4A TO-220F-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 2.34 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,200	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	-	14.3nC @ 10V	360pF @ 30V	±30V	-	2W (Ta), 30W (Tc)	2.34 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NP22N055SLE-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 22A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 11A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock158,064	MOSFET (Metal Oxide)	55V	22A (Ta)	4.5V, 10V	2.5V @ 250µA	23nC @ 5V	1100pF @ 25V	±20V	-	1.2W (Ta), 45W (Tc)	37 mOhm @ 11A, 10V	175°C (TJ)	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPak (2 Leads + Tab), SC-63
FQI2NA90TU	Fairchild/ON Semiconductor	MOSFET N-CH 900V 2.8A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,592	MOSFET (Metal Oxide)	900V	2.8A (Tc)	10V	5V @ 250µA	20nC @ 10V	680pF @ 25V	±30V	-	3.13W (Ta), 107W (Tc)	5.8 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRLS630A	Fairchild/ON Semiconductor	MOSFET N-CH 200V 6.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.25A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,632	MOSFET (Metal Oxide)	200V	6.5A (Tc)	5V	2V @ 250µA	27nC @ 5V	755pF @ 25V	±20V	-	36W (Tc)	400 mOhm @ 3.25A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IPP65R600E6XKSA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,584	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.5V @ 210µA	23nC @ 10V	440pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IRF7490PBF	Infineon Technologies	MOSFET N-CH 100V 5.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,008	MOSFET (Metal Oxide)	100V	5.4A (Ta)	10V	4V @ 250µA	56nC @ 10V	1720pF @ 25V	±20V	-	2.5W (Ta)	39 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVMFS5C423NLT3G	ON Semiconductor	MOSFET N-CH 40V 126A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,544	MOSFET (Metal Oxide)	40V	31A (Ta), 150A (Tc)	4.5V, 10V	2V @ 250µA	50nC @ 10V	3100pF @ 20V	±20V	-	3.7W (Ta), 83W (Tc)	2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SIR864DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,424	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.4V @ 250µA	65nC @ 10V	2460pF @ 15V	±20V	-	5W (Ta), 54W (Tc)	3.6 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
MCH3376-TL-E	ON Semiconductor	MOSFET P-CH 8A 20V MCPH3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 241 mOhm @ 750mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-MCPH Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock4,960	MOSFET (Metal Oxide)	20V	1.5A (Ta)	1.8V, 4.5V	1.4V @ 1mA	1.7nC @ 4.5V	120pF @ 10V	±10V	-	800mW (Ta)	241 mOhm @ 750mA, 4.5V	150°C (TJ)	Surface Mount	3-MCPH	3-SMD, Flat Leads
TSM900N06CH X0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock7,824	MOSFET (Metal Oxide)	60V	11A (Tc)	4.5V, 10V	2.5V @ 250µA	9.3nC @ 10V	500pF @ 15V	±20V	-	25W (Tc)	90 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPak
NVTFS5C466NLTAG	ON Semiconductor	MOSFET N-CH 40V 51A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,856	MOSFET (Metal Oxide)	40V	51A (Tc)	4.5V, 10V	2.2V @ 250µA	7nC @ 4.5V	880pF @ 25V	±20V	-	38W (Tc)	7.3 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IXTP4N65X2	IXYS	MOSFET N-CH 650V 4A X2 TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,336	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	5V @ 250µA	8.3nC @ 10V	455pF @ 25V	±30V	-	80W (Tc)	850 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
R6015KNJTL	Rohm Semiconductor	NCH 600V 15A POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 184W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock12,744	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	5V @ 1mA	37.5nC @ 10V	1050pF @ 25V	±20V	-	184W (Tc)	290 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
C3M0016120D	Wolfspeed, Inc.	SICFET N-CH 1200V 115A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V Vgs (Max): +15V, -4V FET Feature: - Power Dissipation (Max): 556W (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock4,692	SiCFET (Silicon Carbide)	1200 V	115A (Tc)	15V	3.6V @ 23mA	207 nC @ 15 V	6085 pF @ 1000 V	+15V, -4V	-	556W (Tc)	22.3mOhm @ 75A, 15V	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPD65R420CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 8.7A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-341 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,470	MOSFET (Metal Oxide)	650 V	8.7A (Tc)	10V	4.5V @ 300µA	31.5 nC @ 10 V	870 pF @ 100 V	±20V	-	83.3W (Tc)	420mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-341	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB65R230CFD7AATMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,565	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	4.5V @ 260µA	23 nC @ 10 V	1044 pF @ 400 V	±20V	-	63W (Tc)	230mOhm @ 5.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IQD020N10NM5CGATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 159µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	100 V	26A (Ta), 273A (Tc)	6V, 10V	3.8V @ 159µA	134 nC @ 10 V	9500 pF @ 50 V	±20V	-	3W (Ta), 333W (Tc)	2.05mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
PJMD390N65EC_L2_00001	Panjit International Inc.	650V SUPER JUNCTION MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 87.5W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock17,820	MOSFET (Metal Oxide)	650 V	10A (Tc)	10V	4V @ 250µA	19 nC @ 10 V	726 pF @ 400 V	±30V	-	87.5W (Tc)	390mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
STD80N6F7	STMicroelectronics	MOSFET N-CH 60V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	40A (Tc)	10V	4V @ 250µA	25 nC @ 10 V	1600 pF @ 30 V	±20V	-	100W (Tc)	8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2312CDS-T1-BE3	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5A (Ta), 6A (Tc)	1.8V, 4.5V	1V @ 250µA	18 nC @ 5 V	865 pF @ 10 V	±8V	-	1.25W (Ta), 2.1W (Tc)	31.8mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
AS1M025120P	ANBON SEMICONDUCTOR (INT'L) LIMITED	N-CHANNEL SILICON CARBIDE POWER FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock372	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	4V @ 15mA	195 nC @ 20 V	3600 pF @ 1000 V	+25V, -10V	-	463W (Tc)	34mOhm @ 50A, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BUK9Y12-55B-C3X	Nexperia USA Inc.	MOSFET N-CH 55V LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 106W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	61.8A (Ta)	5V, 10V	2.15V @ 1mA	32 nC @ 5 V	2880 pF @ 25 V	±15V	-	106W (Ta)	11mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
DMTH10H015LPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	11A (Ta), 44A (Tc)	4.5V, 10V	3V @ 250µA	33.3 nC @ 10 V	1871 pF @ 50 V	±20V	-	2.8W (Ta), 46W (Tc)	16mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN