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IRFS31N20DTRRP
Infineon Technologies

MOSFET N-CH 200V 31A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock120,012
IPP080N06N G
Infineon Technologies

MOSFET N-CH 60V 80A TO-220

Package: TO-220-3

Stock2,496
IRL530NSTRL
Infineon Technologies

MOSFET N-CH 100V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,648
NP89N04PUK-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 90A TO-220

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,720
SI9424BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5.6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,144
FQD6N25TF
Fairchild/ON Semiconductor

MOSFET N-CH 250V 4.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock17,676
RDN120N25
Rohm Semiconductor

MOSFET N-CH 250V 12A TO-220FN

Package: TO-220-3 Full Pack

Stock14,676
IPC60R199CPX1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock2,784
IPD90P04P405AUMA1
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

Package: -

Stock7,712
IXFX32N80P
IXYS

MOSFET N-CH 800V 32A PLUS247

Package: TO-247-3

Stock6,240
NVTFS5124PLWFTWG
ON Semiconductor

MOSFET P-CH 60V 8A U8FL

Package: 8-PowerWDFN

Stock2,368
DMN3027LFG-7
Diodes Incorporated

MOSFET N-CH 30V POWERDI3333-8

Package: 8-PowerWDFN

Stock2,100
STD6N60M2
STMicroelectronics

MOSFET N-CH 600V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,992
IPL60R180P6AUMA1
Infineon Technologies

MOSFET N-CH 600V 4VSON

Package: 4-PowerTSFN

Stock2,704
FQD1N80TM
Fairchild/ON Semiconductor

MOSFET N-CH 800V 1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock766,836
FCP650N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 10A

Package: TO-220-3

Stock21,192
VN2224N3-G
Microchip Technology

MOSFET N-CH 240V 540MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,132
IRF8734TRPBF
Infineon Technologies

MOSFET N-CH 30V 21A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,396
NVTYS004N03CLTWG
onsemi

T6 30V N-CH LL IN LFPAK33

Package: -

Stock8,895
SI6433DQ
Fairchild Semiconductor

P-CHANNEL MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFS31N20DTRRP	Infineon Technologies	MOSFET N-CH 200V 31A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock120,012	MOSFET (Metal Oxide)	200V	31A (Tc)	10V	5.5V @ 250µA	107nC @ 10V	2370pF @ 25V	±30V	-	3.1W (Ta), 200W (Tc)	82 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP080N06N G	Infineon Technologies	MOSFET N-CH 60V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock2,496	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 150µA	93nC @ 10V	3500pF @ 30V	±20V	-	214W (Tc)	8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRL530NSTRL	Infineon Technologies	MOSFET N-CH 100V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,648	MOSFET (Metal Oxide)	100V	17A (Tc)	4V, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	±20V	-	3.8W (Ta), 79W (Tc)	100 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP89N04PUK-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 45A, 5V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,720	MOSFET (Metal Oxide)	40V	90A (Tc)	10V	4V @ 250µA	102nC @ 10V	5850pF @ 25V	±20V	-	1.8W (Ta), 147W (Tc)	2.95 mOhm @ 45A, 5V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI9424BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 5.6A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±9V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,144	MOSFET (Metal Oxide)	20V	5.6A (Ta)	2.5V, 4.5V	850mV @ 250µA	40nC @ 4.5V	-	±9V	-	1.25W (Ta)	25 mOhm @ 7.1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQD6N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock17,676	MOSFET (Metal Oxide)	250V	4.4A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	300pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	1 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RDN120N25	Rohm Semiconductor	MOSFET N-CH 250V 12A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,676	MOSFET (Metal Oxide)	250V	12A (Ta)	10V	4V @ 1mA	62nC @ 10V	1224pF @ 10V	±30V	-	40W (Tc)	210 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
IPC60R199CPX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,784	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD90P04P405AUMA1	Infineon Technologies	MOSFET P-CH 40V 90A TO252-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,712	-	-	-	10V	-	-	-	±20V	-	-	-	-	-	-	-
IXFX32N80P	IXYS	MOSFET N-CH 800V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,240	MOSFET (Metal Oxide)	800V	32A (Tc)	10V	5V @ 8mA	150nC @ 10V	8800pF @ 25V	±30V	-	830W (Tc)	270 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
NVTFS5124PLWFTWG	ON Semiconductor	MOSFET P-CH 60V 8A U8FL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,368	MOSFET (Metal Oxide)	60V	2.4A (Ta)	4.5V, 10V	2.5V @ 250µA	6nC @ 10V	250pF @ 25V	±20V	-	3W (Ta), 18W (Tc)	260 mOhm @ 3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
DMN3027LFG-7	Diodes Incorporated	MOSFET N-CH 30V POWERDI3333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 18.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,100	MOSFET (Metal Oxide)	30V	5.3A (Ta)	4.5V, 10V	1.8V @ 250µA	11.3nC @ 10V	580pF @ 15V	±25V	-	1W (Ta)	18.6 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
STD6N60M2	STMicroelectronics	MOSFET N-CH 600V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 232pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,992	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	4V @ 250µA	8nC @ 10V	232pF @ 100V	±25V	-	60W (Tc)	1.2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IPL60R180P6AUMA1	Infineon Technologies	MOSFET N-CH 600V 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Package: 4-PowerTSFN	Stock2,704	MOSFET (Metal Oxide)	600V	22.4A (Tc)	10V	4.5V @ 750µA	44nC @ 10V	2080pF @ 100V	±20V	-	176W (Tc)	180 mOhm @ 9A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
FQD1N80TM	Fairchild/ON Semiconductor	MOSFET N-CH 800V 1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock766,836	MOSFET (Metal Oxide)	800V	1A (Tc)	10V	5V @ 250µA	7.2nC @ 10V	195pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	20 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FCP650N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 10A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1565pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock21,192	MOSFET (Metal Oxide)	800V	10A (Tc)	10V	4.5V @ 800µA	35nC @ 10V	1565pF @ 100V	±20V	-	162W (Tc)	650 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
VN2224N3-G	Microchip Technology	MOSFET N-CH 240V 540MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 540mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,132	MOSFET (Metal Oxide)	240V	540mA (Tj)	5V, 10V	3V @ 5mA	-	350pF @ 25V	±20V	-	1W (Tc)	1.25 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRF8734TRPBF	Infineon Technologies	MOSFET N-CH 30V 21A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,396	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	2.35V @ 50µA	30nC @ 4.5V	3175pF @ 15V	±20V	-	2.5W (Ta)	3.5 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVTYS004N03CLTWG	onsemi	T6 30V N-CH LL IN LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 51.5W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Stock8,895	MOSFET (Metal Oxide)	30 V	21A (Ta), 85A (Tc)	4.5V, 10V	2.2V @ 250µA	21 nC @ 10 V	1520 pF @ 15 V	±20V	-	3W (Ta), 51.5W (Tc)	4.2mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56
SI6433DQ	Fairchild Semiconductor	P-CHANNEL MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1193 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	4.5A (Ta)	1.8V, 4.5V	1.5V @ 250µA	18 nC @ 4.5 V	1193 pF @ 10 V	±8V	-	600mW (Ta)	47mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
DMP1070UQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 890mW (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	5.4A (Ta)	1.8V, 4.5V	1V @ 250µA	11.5 nC @ 4.5 V	143 pF @ 10 V	±8V	-	890mW (Ta)	31mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IAUZ40N10S5L120ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 46A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-33 Package / Case: 8-PowerTDFN	Package: -	Stock13,995	MOSFET (Metal Oxide)	100 V	46A (Tj)	4.5V, 10V	2.2V @ 27µA	22.6 nC @ 10 V	1589 pF @ 50 V	±20V	-	62W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-33	8-PowerTDFN
MCH5835-TL-E	onsemi	NCH+SBD 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK6D23-40EH	Nexperia USA Inc.	SMALL SIGNAL MOSFETS FOR AUTOMOT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock8,940	MOSFET (Metal Oxide)	40 V	8A (Ta), 19A (Tc)	4.5V, 10V	2.7V @ 250µA	19 nC @ 10 V	582 pF @ 20 V	±20V	-	2.3W (Ta), 15W (Tc)	23mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
SIHU2N80E-GE3	Vishay Siliconix	MOSFET N-CH 800V 2.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	2.8A (Tc)	10V	4V @ 250µA	19.6 nC @ 10 V	315 pF @ 100 V	±30V	-	62.5W (Tc)	2.75Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
C3M0120065L-TR	Wolfspeed, Inc.	SIC, MOSFET, 120M, 650V, TOLL, I FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V Vgs (Max): +19V, -8V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	Package: -	Request a Quote	SiCFET (Silicon Carbide)	650 V	21A (Tc)	15V	3.6V @ 1.86mA	26 nC @ 15 V	640 pF @ 400 V	+19V, -8V	-	86W (Tc)	157mOhm @ 6.76A, 15V	-40°C ~ 175°C (TJ)	Surface Mount	TOLL	8-PowerSFN
GT035N10M	Goford Semiconductor	N100V, 190A,RD<3.5M@10V,VTH2V~4V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6188 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 277W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,980	MOSFET (Metal Oxide)	100 V	190A (Tc)	10V	4V @ 250µA	68 nC @ 10 V	6188 pF @ 50 V	±20V	-	277W (Tc)	3.5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIRA10BDP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 30A/60A PPAK SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 5W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Ta), 60A (Tc)	4.5V, 10V	2.4V @ 250µA	36.2 nC @ 10 V	1710 pF @ 15 V	+20V, -16V	-	5W (Ta), 43W (Tc)	3.6mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8