Page 1192 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPI10N10L
Infineon Technologies

MOSFET N-CH 100V 10.3A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,496
IRF7832Z
Infineon Technologies

MOSFET N-CH 30V 21A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock8,748
IRFR3303TRR
Infineon Technologies

MOSFET N-CH 30V 33A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,688
NVB5426NT4G
ON Semiconductor

MOSFET N-CH 60V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,704
PH5030AL,115
Nexperia USA Inc.

MOSFET N-CH 30V 91A LFPAK

Package: SC-100, SOT-669

Stock70,008
BUK9618-55A,118
NXP

MOSFET N-CH 55V 61A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
IPP65R420CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 8.7A TO220

Package: TO-220-3

Stock4,640
IXFN72N55Q2
IXYS

MOSFET N-CH 550V 72A SOT-227B

Package: SOT-227-4, miniBLOC

Stock3,696
IXFP130N10T
IXYS

MOSFET N-CH 100V 130A TO-220

Package: TO-220-3

Stock7,104
NVD4804NT4G-VF01
ON Semiconductor

MOSFET N-CH 30V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,080
DMT2004UFG-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V POWERDI3333

Package: 8-PowerVDFN

Stock7,072
AON6411
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 47A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock5,472
IRFSL7437PBF
Infineon Technologies

MOSFET N CH 40V 195A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,200
FCH041N60F_F085
Fairchild/ON Semiconductor

MOSFET N CH 600V 76A TO247

Package: TO-247-3

Stock6,780
RDD050N20TL
Rohm Semiconductor

MOSFET N-CH 200V 5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock29,520
STFW24N60M2
STMicroelectronics

MOSFET N-CH 600V 18A TO-3PF

Package: TO-3PF

Stock15,816
PSMN9R5-100BS,118
Nexperia USA Inc.

MOSFET N-CH 100V 89A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock30,378
IRFIB7N50APBF
Vishay Siliconix

MOSFET N-CH 500V 6.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,176
SIRA80DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 30V 100A PPAK SO-8

Package: -

Stock47,103
2SK1445LS
onsemi

N-CHANNEL SILICON MOSFET

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPI10N10L	Infineon Technologies	MOSFET N-CH 100V 10.3A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 444pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,496	MOSFET (Metal Oxide)	100V	10.3A (Tc)	4.5V, 10V	2V @ 21µA	22nC @ 10V	444pF @ 25V	±20V	-	50W (Tc)	154 mOhm @ 8.1A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7832Z	Infineon Technologies	MOSFET N-CH 30V 21A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock8,748	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	2.35V @ 250µA	45nC @ 4.5V	3860pF @ 15V	±20V	-	2.5W (Ta)	3.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR3303TRR	Infineon Technologies	MOSFET N-CH 30V 33A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,688	MOSFET (Metal Oxide)	30V	33A (Tc)	10V	4V @ 250µA	29nC @ 10V	750pF @ 25V	±20V	-	57W (Tc)	31 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NVB5426NT4G	ON Semiconductor	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,704	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	170nC @ 10V	5800pF @ 25V	±20V	-	215W (Tc)	6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PH5030AL,115	Nexperia USA Inc.	MOSFET N-CH 30V 91A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 12V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5 mOhm @ 15A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock70,008	MOSFET (Metal Oxide)	30V	91A (Tc)	-	2.15V @ 1mA	29nC @ 10V	1760pF @ 12V	-	-	-	5 mOhm @ 15A, 10V	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BUK9618-55A,118	NXP	MOSFET N-CH 55V 61A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640	MOSFET (Metal Oxide)	55V	61A (Tc)	4.5V, 10V	2V @ 1mA	34nC @ 5V	2210pF @ 25V	±15V	-	136W (Tc)	16 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP65R420CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 8.7A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,640	MOSFET (Metal Oxide)	650V	8.7A (Tc)	10V	4.5V @ 340µA	32nC @ 10V	870pF @ 100V	±20V	-	83.3W (Tc)	420 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IXFN72N55Q2	IXYS	MOSFET N-CH 550V 72A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 72A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,696	MOSFET (Metal Oxide)	550V	72A	10V	5V @ 8mA	258nC @ 10V	10500pF @ 25V	±30V	-	890W (Tc)	72 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFP130N10T	IXYS	MOSFET N-CH 100V 130A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,104	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4.5V @ 1mA	104nC @ 10V	5080pF @ 25V	-	-	360W (Tc)	9.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVD4804NT4G-VF01	ON Semiconductor	MOSFET N-CH 30V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 11.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,080	MOSFET (Metal Oxide)	30V	14.5A (Ta), 124A (Tc)	4.5V, 11.5V	2.5V @ 250µA	40nC @ 4.5V	4490pF @ 12V	±20V	-	1.43W (Ta), 107W (Tc)	4 mOhm @ 30A, 11.5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
DMT2004UFG-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,072	MOSFET (Metal Oxide)	24V	70A (Tc)	2.5V, 10V	1.45V @ 250µA	53.7nC @ 10V	1683pF @ 15V	±12V	-	2.3W (Ta)	5 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
AON6411	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 47A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10290pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 7.3W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock5,472	MOSFET (Metal Oxide)	20V	47A (Ta), 85A (Tc)	2.5V, 10V	1.3V @ 250µA	330nC @ 10V	10290pF @ 10V	±12V	-	7.3W (Ta), 156W (Tc)	2.1 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IRFSL7437PBF	Infineon Technologies	MOSFET N CH 40V 195A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,200	MOSFET (Metal Oxide)	40V	195A (Tc)	6V, 10V	3.9V @ 150µA	225nC @ 10V	7330pF @ 25V	±20V	-	230W (Tc)	1.8 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
FCH041N60F_F085	Fairchild/ON Semiconductor	MOSFET N CH 600V 76A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 347nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock6,780	MOSFET (Metal Oxide)	600V	76A (Tc)	10V	5V @ 250µA	347nC @ 10V	10900pF @ 25V	±20V	-	595W (Tc)	41 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
RDD050N20TL	Rohm Semiconductor	MOSFET N-CH 200V 5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 2.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock29,520	MOSFET (Metal Oxide)	200V	5A (Ta)	10V	4V @ 1mA	9.3nC @ 10V	292pF @ 10V	±30V	-	20W (Tc)	720 mOhm @ 2.5A, 10V	-	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
STFW24N60M2	STMicroelectronics	MOSFET N-CH 600V 18A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3PF	Package: TO-3PF	Stock15,816	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	29nC @ 10V	1060pF @ 100V	±25V	-	48W (Tc)	190 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	TO-3PF
PSMN9R5-100BS,118	Nexperia USA Inc.	MOSFET N-CH 100V 89A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4454pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock30,378	MOSFET (Metal Oxide)	100V	89A (Tc)	10V	4V @ 1mA	82nC @ 10V	4454pF @ 50V	±20V	-	211W (Tc)	9.6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFIB7N50APBF	Vishay Siliconix	MOSFET N-CH 500V 6.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,176	MOSFET (Metal Oxide)	500V	6.6A (Tc)	10V	4V @ 250µA	52nC @ 10V	1423pF @ 25V	±30V	-	60W (Tc)	520 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
SIRA80DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 30V 100A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock47,103	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	2.2V @ 250µA	188 nC @ 10 V	9530 pF @ 15 V	+20V, -16V	-	104W (Tc)	0.62mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
2SK1445LS	onsemi	N-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AO3416A	UMW	20V 6.5A 22MR@4.5V,6.5A 1.4W 1.1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,445	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.8V, 4.5V	1.1V @ 250µA	10 nC @ 4.5 V	1650 pF @ 10 V	±8V	-	1.4W (Ta)	25mOhm @ 6.5A, 4.5V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IRFW720BTMNL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	3.3A (Tc)	10V	4V @ 250µA	18 nC @ 10 V	600 pF @ 25 V	±30V	-	3.13W (Ta), 49W (Tc)	1.75Ohm @ 1.65A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMN2710UW-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT323 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock10,182	MOSFET (Metal Oxide)	20 V	900mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.6 nC @ 4.5 V	42 pF @ 16 V	±6V	-	470mW (Ta)	450mOhm @ 600mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
GSF0301	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 600MA, 30V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 310mW (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock17,994	MOSFET (Metal Oxide)	30 V	600mA (Tc)	2.5V, 4.5V	1.2V @ 250µA	5.2 nC @ 4.5 V	146 pF @ 15 V	±12V	-	310mW (Tc)	500mOhm @ 300mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
SIHD690N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 6.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	6.4A (Tc)	10V	5V @ 250µA	12 nC @ 10 V	347 pF @ 100 V	±30V	-	62.5W (Tc)	700mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP90R1K2C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 5.1A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	900 V	5.1A (Tc)	10V	3.5V @ 310µA	28 nC @ 10 V	710 pF @ 100 V	±20V	-	83W (Tc)	1.2Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
CES2331-ML	MOSLEADER	Single P -20V -4.2A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCC8104-L1Q-CM	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 20A 8TSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 700mW (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.1x3.1) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Ta)	4.5V, 10V	2V @ 500µA	58 nC @ 10 V	2260 pF @ 10 V	+20V, -25V	-	700mW (Ta), 27W (Tc)	8.8mOhm @ 10A, 10V	150°C	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN