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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,840 |
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MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | ±20V | - | 48W (Tc) | 24.5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 10A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,552 |
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MOSFET (Metal Oxide) | 20V | 10A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 5A VS-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-6 (2.9x2.8)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,536 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | ±20V | - | 700mW (Ta) | 59 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,848 |
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MOSFET (Metal Oxide) | 30V | 7A (Ta) | - | - | 11.6nC @ 5V | 900pF @ 10V | - | - | - | 28 mOhm @ 7A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 29A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,704 |
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MOSFET (Metal Oxide) | 60V | 29A (Tc) | 4.5V, 10V | 3V @ 250µA | 28nC @ 10V | 900pF @ 25V | ±16V | - | 75W (Tc) | 35 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 50V 173MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 173mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Tc)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 100mA, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,912 |
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MOSFET (Metal Oxide) | 50V | 173mA (Ta) | 5V, 10V | 1V @ 1mA | - | 25pF @ 10V | ±20V | - | 830mW (Tc) | 15 Ohm @ 100mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 25V 33A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 12V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,048 |
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MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 30nC @ 10V | 2000pF @ 12V | ±16V | - | 2.5W (Ta), 50W (Tc) | 1.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,792 |
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MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | ±20V | - | 158W (Tc) | 10.7 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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IXYS |
MOSFET N-CH ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Package: ISOPLUS247? |
Stock3,472 |
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MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS247? | ISOPLUS247? |
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IXYS |
MOSFET N-CH 200V 74A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3,712 |
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MOSFET (Metal Oxide) | 200V | 74A (Tc) | 10V | 5V @ 250µA | 107nC @ 10V | 3300pF @ 25V | ±20V | - | 480W (Tc) | 34 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 277.8W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,936 |
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MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 5V @ 250µA | 90nC @ 10V | 1780pF @ 100V | ±30V | - | 277.8W (Tc) | 340 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 7A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock5,360 |
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MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 4.5V @ 2.5mA | 130nC @ 10V | 2800pF @ 25V | ±20V | - | 180W (Tc) | 1.4 Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 2.15 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock40,800 |
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MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 77nC @ 10V | 3595pF @ 15V | +20V, -16V | - | 3.7W (Ta), 52W (Tc) | 2.15 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 200V 3.4A TO-220F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock20,208 |
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MOSFET (Metal Oxide) | 200V | 3.4A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | ±30V | - | 38W (Tc) | 1.4 Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 27A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,880 |
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MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 4V @ 29µA | 24nC @ 10V | 1570pF @ 50V | ±20V | - | 58W (Tc) | 33 mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 650V 11A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 718pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,008 |
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MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 4V @ 250µA | 19.5nC @ 10V | 718pF @ 100V | ±25V | - | 110W (Tc) | 360 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 600V 46A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Rds On (Max) @ Id, Vgs: 93 mOhm @ 23A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock12,120 |
|
MOSFET (Metal Oxide) | 600V | 46A (Ta) | 10V | 5V @ 1mA | 150nC @ 10V | 6100pF @ 25V | ±30V | - | 120W (Tc) | 93 mOhm @ 23A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-220-3 Full Pack |
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|
Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock93,978 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 124nC @ 10V | 9600pF @ 15V | ±20V | - | 2.5W (Ta), 96W (Tc) | 2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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|
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 0.9A SSOT3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,759,536 |
|
MOSFET (Metal Oxide) | 30V | 900mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 3nC @ 4.5V | 135pF @ 15V | ±20V | - | 500mW (Ta) | 300 mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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|
YAGEO XSEMI |
MOSFET N-CH 30V 4.5A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 15 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 14.4 nC @ 4.5 V | 1330 pF @ 15 V | ±8V | - | 1.25W (Ta) | 35mOhm @ 4.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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onsemi |
SF3 FRFET AUTO 40MOHM TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.1mA
- Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock1,236 |
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MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 5V @ 2.1mA | 153 nC @ 10 V | 5875 pF @ 400 V | ±30V | - | 446W (Tc) | 40mOhm @ 32.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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onsemi |
SUPERFET5 FAST 185MOHM PQFN88
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 116W (Tc)
- Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-TDFN (8x8)
- Package / Case: 4-PowerTSFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4.3V @ 1.4mA | 25 nC @ 10 V | 1350 pF @ 400 V | ±30V | - | 116W (Tc) | 185mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-TDFN (8x8) | 4-PowerTSFN |
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onsemi |
MOSFET N-CH 40V 19A/71A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Stock4,314 |
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MOSFET (Metal Oxide) | 40 V | 19A (Ta), 71A (Tc) | 10V | 3.5V @ 250µA | 16 nC @ 10 V | 1000 pF @ 25 V | ±20V | - | 3.6W (Ta), 50W (Tc) | 5.3mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
PLANAR 40<-<100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 1.9A (Ta) | 10V | 5.5V @ 250µA | 15 nC @ 10 V | 330 pF @ 25 V | ±30V | - | 2.5W (Ta) | 280mOhm @ 1.14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 650V 18A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: - |
Stock900 |
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MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 5V @ 1.5mA | 29 nC @ 10 V | 1520 pF @ 25 V | ±30V | - | 290W (Tc) | 200mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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onsemi |
MOSFET N-CH 40V 22A/103A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 22A (Ta), 103A (Tc) | 10V | 3.5V @ 60µA | 23 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 3.2W (Ta), 69W (Tc) | 3.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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MOSLEADER |
Single P -20V -2.4A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
COOLMOS CFD7 SUPERJUNCTION MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 480µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4.5V @ 480µA | 41 nC @ 10 V | 1942 pF @ 400 V | ±20V | - | 144W (Tc) | 115mOhm @ 9.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |