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ON Semiconductor |
MOSFET P-CH 30V 5A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,888 |
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MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4V, 10V | - | 10nC @ 10V | 430pF @ 10V | ±20V | - | 1.5W (Ta) | 59 mOhm @ 3A, 10V | - | Surface Mount | 6-MCPH | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 600V 8.5A TO-220FI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 940 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FI(LS)
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,968 |
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MOSFET (Metal Oxide) | 600V | 6.9A (Tc) | 10V | 5V @ 1mA | 29nC @ 10V | 750pF @ 30V | ±30V | - | 2W (Ta), 35W (Tc) | 940 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FI(LS) | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 32A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 58W (Tc)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 16A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,664 |
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MOSFET (Metal Oxide) | 60V | 32A (Tc) | 6V, 10V | 4V @ 250µA | 33nC @ 10V | 1120pF @ 25V | ±20V | - | 58W (Tc) | 27 mOhm @ 16A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 10V TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,200 |
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MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.8V @ 125µA | 95nC @ 10V | 7000pF @ 50V | ±20V | - | 188W (Tc) | 3.9 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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IXYS |
MOSFET P-CH 100V 26A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock6,144 |
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MOSFET (Metal Oxide) | 100V | 26A (Tc) | 10V | 4.5V @ 250µA | 52nC @ 10V | 3820pF @ 25V | ±15V | - | 150W (Tc) | 90 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 15V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): +2V, -15V
- FET Feature: -
- Power Dissipation (Max): 791mW (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,008 |
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MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | +2V, -15V | - | 791mW (Ta) | 90 mOhm @ 2.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 2.85A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,504 |
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MOSFET (Metal Oxide) | 200V | 2.85A (Ta) | 6V, 10V | 2V @ 250µA (Min) | 42nC @ 10V | - | ±20V | - | 1.56W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia USA Inc. |
MOSFET P-CH 30V SOT883
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 15V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 510 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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Package: 3-XFDFN |
Stock2,464 |
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MOSFET (Metal Oxide) | 30V | 1A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 1.4nC @ 4.5V | 122pF @ 15V | ±8V | - | 350mW (Ta), 6.25W (Tc) | 510 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V 27A POWER33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Dual Cool ? 33
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,024 |
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MOSFET (Metal Oxide) | 40V | 27A (Ta), 108A (Tc) | 4.5V, 10V | 3V @ 250µA | 60nC @ 10V | 3965pF @ 20V | ±20V | - | 2.9W (Ta), 56W (Tc) | 2.5 mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ? 33 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock36,360 |
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MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 8.4nC @ 10V | 330pF @ 15V | ±20V | - | 1.25W (Ta) | 30 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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STMicroelectronics |
MOSFET N-CH 500V 21A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock14,892 |
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MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 1735pF @ 25V | ±25V | - | 150W (Tc) | 158 mOhm @ 10.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH 80V 34A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock237,780 |
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MOSFET (Metal Oxide) | 80V | 34A (Tc) | 10V | 4V @ 1mA | 20nC @ 10V | 1200pF @ 40V | ±20V | - | 74W (Tc) | 27.5 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Rohm Semiconductor |
MOSFET N-CH 30V 3A DFN1616-6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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onsemi |
80V T8 IN U8FL HEFET PACK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFNW (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 14A (Ta), 61A (Tc) | 6V, 10V | 4V @ 270µA | 23 nC @ 10 V | 1450 pF @ 40 V | ±20V | - | 3.8W (Ta), 75W (Tc) | 8.3mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFNW (3.3x3.3) | 8-PowerWDFN |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock2,754 |
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MOSFET (Metal Oxide) | 800 V | 3A (Ta) | 10V | 4.5V @ 2mA | 11.5 nC @ 10 V | 300 pF @ 100 V | ±20V | - | 45W (Ta) | 1.8Ohm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
NCH+SBD 1.8V DRIVE SERIES
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET BVDSS: 101V~250V TO252 T&
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,470 |
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MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 4V @ 250µA | 11.5 nC @ 10 V | 814 pF @ 75 V | ±20V | - | 1.7W (Ta) | 60mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V SO-8 T&R 2
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W
- Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 112 nC @ 10 V | 5697 pF @ 20 V | ±20V | - | 1.5W | 11mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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MOSLEADER |
Single N 20V 3.5A SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Goford Semiconductor |
MOSFET N-CH 100V 330A TOLL-8
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8058 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: -
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Package: - |
Stock6,000 |
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MOSFET (Metal Oxide) | - | 330A (Tc) | 10V | 3.8V @ 250µA | 121 nC @ 10 V | 8058 pF @ 50 V | ±20V | - | - | 1.9mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL | - |
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Sanyo |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A UFM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Lead
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Package: - |
Stock43,884 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.8W (Ta) | 36mOhm @ 4A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Lead |
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Torex Semiconductor Ltd |
MOSFET N-CH 30V 500MA SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock210 |
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MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 2.5V, 4.5V | 1.7V @ 250µA | 0.78 nC @ 10 V | 40 pF @ 10 V | ±20V | - | 400mW (Ta) | 1.5Ohm @ 100mA, 4.5V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO220FM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock5,790 |
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MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 15V | 7V @ 3.5mA | 45 nC @ 15 V | 1500 pF @ 100 V | ±30V | - | 76W (Tc) | 234mOhm @ 10A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Transphorm |
650 V 95 A GAN FET
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock2,196 |
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GaNFET (Gallium Nitride) | 650 V | 93A (Tc) | 10V | 4.8V @ 2mA | 100 nC @ 10 V | 5218 pF @ 400 V | ±20V | - | 266W (Tc) | 18mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Micro Commercial Co |
Interface
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W
- Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 20A | 4.5V, 10V | 2.5V @ 250µA | 53 nC @ 10 V | 2014 pF @ 50 V | ±20V | - | 47W | 45mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 60A LFPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1322 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 59W (Ta)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Package: - |
Stock13,440 |
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MOSFET (Metal Oxide) | 40 V | 60A (Ta) | 10V | 3.6V @ 1mA | 19 nC @ 10 V | 1322 pF @ 20 V | ±20V | - | 59W (Ta) | 8.5mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V PowerDI50
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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