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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V TO220
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,944 |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 16A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 11.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SO-8FL
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,472 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 156A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 86nC @ 11.5V | 5250pF @ 12V | ±20V | - | 900mW (Ta), 86.2W (Tc) | 2.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 350V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 14 Ohm @ 240mA, 0V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock7,168 |
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MOSFET (Metal Oxide) | 350V | - | 0V | - | - | 100pF @ 25V | ±15V | Depletion Mode | 1.4W (Ta) | 14 Ohm @ 240mA, 0V | -55°C ~ 125°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 600V 3.1A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock36,012 |
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MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 4.5V @ 50µA | 18nC @ 10V | 372pF @ 25V | ±30V | - | 27W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 1.1A 6-SSOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 234pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 725 mOhm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,568 |
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MOSFET (Metal Oxide) | 200V | 1.1A (Ta) | 10V | 4.5V @ 250µA | 11nC @ 10V | 234pF @ 100V | ±20V | - | 1.6W (Ta) | 725 mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Package: DirectFET? Isometric MX |
Stock61,764 |
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MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 65nC @ 4.5V | 5640pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 2.2 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
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Vishay Siliconix |
MOSFET N-CH 30V 24A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 56W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock218,880 |
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MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 122nC @ 10V | 5500pF @ 15V | ±20V | - | 5W (Ta), 56W (Tc) | 5.5 mOhm @ 23.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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ON Semiconductor |
MOSFET N-CH 30V 80A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 780mW (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,088 |
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MOSFET (Metal Oxide) | 30V | 12.4A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 4.5V | 2300pF @ 15V | ±20V | - | 780mW (Ta), 33W (Tc) | 3.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 2.8A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,605,944 |
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MOSFET (Metal Oxide) | 30V | 2.8A (Ta) | 4.5V, 10V | 1V @ 250µA | 7nC @ 10V | 370pF @ 15V | ±20V | - | 950mW (Ta) | 80 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,360 |
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MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 4V @ 250µA | 10.7nC @ 10V | 555pF @ 100V | ±30V | - | 62.5W (Tc) | 750 mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 30V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock799,920 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20nC @ 4.5V | 2200pF @ 25V | ±20V | - | 70W (Tc) | 4.7 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 47A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock15,096 |
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MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 3.8W (Ta), 110W (Tc) | 22 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A TO-262AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262AA
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock457,812 |
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MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262AA | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock103,464 |
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MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 700pF @ 25V | ±20V | - | 3.1W (Ta), 74W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 20A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,972 |
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MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4.1V @ 250µA | 19.8nC @ 10V | 1038pF @ 100V | ±30V | - | 266W (Tc) | 199 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 18A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock379,308 |
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MOSFET (Metal Oxide) | 60V | 18A (Ta) | 5V | 2V @ 250µA | 22nC @ 5V | 675pF @ 25V | ±15V | - | 2.1W (Ta), 55W (Tj) | 65 mOhm @ 9A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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GeneSiC Semiconductor |
TRANS SJT 1.2KV 50A
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 7209pF @ 800V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 583W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AB
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock6,160 |
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SiC (Silicon Carbide Junction Transistor) | 1200V | 100A (Tc) | - | - | - | 7209pF @ 800V | - | - | 583W (Tc) | 25 mOhm @ 50A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
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Nexperia USA Inc. |
MOSFET N-CH LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 72.4 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock89,124 |
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MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 4V @ 1mA | 14nC @ 10V | 645pF @ 50V | ±20V | - | 56W (Tc) | 72.4 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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MOSLEADER |
N 20V SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 5V @ 250µA | 68 nC @ 10 V | 1900 pF @ 25 V | ±30V | - | 250W (Tc) | 380mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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onsemi |
IC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 13A (Ta), 58A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 31 nC @ 10 V | 1260 pF @ 15 V | ±20V | - | 55W (Tc) | 9mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
PXP8R3-20QX/SOT8002/MLPAK33
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 65.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 91.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MLPAK33
- Package / Case: 8-PowerVDFN
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Package: - |
Stock21,372 |
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MOSFET (Metal Oxide) | 20 V | 12.4A (Ta), 65.1A (Tc) | 2.5V, 4.5V | 1.25V @ 250µA | 91.8 nC @ 4.5 V | 6200 pF @ 10 V | ±12V | - | 1.8W (Ta), 50W (Tc) | 8.3mOhm @ 12.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | MLPAK33 | 8-PowerVDFN |
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onsemi |
SF3 650V EASY 40MOHM TO-247 AUTO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 4.5V @ 1.7mA | 136 nC @ 10 V | 4740 pF @ 400 V | ±30V | - | 417W (Tc) | 40mOhm @ 32.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Comchip Technology |
MOSFET N-CH 60V 4.4A/16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 27W (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock363 |
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MOSFET (Metal Oxide) | 60 V | 4.4A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 10 V | 815 pF @ 15 V | ±20V | - | 2W (Ta), 27W (Tc) | 50mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Qorvo |
SICFET N-CH 1700V 7.6A D2PAK-7
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 734 pF @ 1200 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock23,265 |
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SiCFET (Cascode SiCJFET) | 1700 V | 7.6A (Tc) | 12V | 6V @ 10mA | 23.1 nC @ 15 V | 734 pF @ 1200 V | ±25V | - | 100W (Tc) | 515mOhm @ 5A, 12V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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MOSLEADER |
Single N 20V 6.5A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Vishay Siliconix |
N-CHANNEL 600V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4V @ 250µA | 76 nC @ 10 V | 1350 pF @ 100 V | ±30V | - | 34W (Tc) | 280mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Rohm Semiconductor |
650V 15A TO-220FM, HIGH-SPEED SW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 5V @ 430µA | 27.5 nC @ 10 V | 1050 pF @ 25 V | ±20V | - | 60W (Tc) | 315mOhm @ 6.5A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |