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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3-11
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,776 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 20µA | 40nC @ 10V | 2890pF @ 25V | ±16V | - | 50W (Tc) | 12 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,720 |
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MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | ±20V | - | 150W (Tc) | 5.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH 12V 9.5A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,472 |
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MOSFET (Metal Oxide) | 12V | 9.5A (Ta) | 2.5V, 4.5V | 600mV @ 250µA | 74nC @ 5V | 6000pF @ 10V | ±12V | - | 2.5W (Ta) | 20 mOhm @ 9.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 100V 200MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
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Package: E-Line-3 |
Stock18,864 |
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MOSFET (Metal Oxide) | 100V | 200mA (Ta) | 10V | 2.4V @ 1mA | - | 40pF @ 25V | ±20V | - | 625mW (Ta) | 10 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,872 |
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MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 3.1W (Ta), 36W (Tc) | 2 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET P-CH 100V 158A ISOPLUS247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 69500pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 105A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock3,200 |
|
MOSFET (Metal Oxide) | 100V | 195A (Tc) | 10V | 4.5V @ 250µA | 740nC @ 10V | 69500pF @ 25V | ±15V | - | 595W (Tc) | 8 mOhm @ 105A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
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Microchip Technology |
MOSFET N-CH 50V 1.5A SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-243AA (SOT-89)
- Package / Case: TO-243AA
|
Package: TO-243AA |
Stock8,784 |
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MOSFET (Metal Oxide) | 50V | 1.5A (Tj) | 4.5V, 10V | 2.4V @ 10mA | - | 300pF @ 25V | ±20V | - | 1.6W (Ta) | 300 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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|
ON Semiconductor |
MOSFET N-CH 30V 69A U8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock4,720 |
|
MOSFET (Metal Oxide) | 30V | 18.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 10V | 1740pF @ 12V | ±20V | - | 3.2W (Ta), 21W (Tc) | 4.7 mOhm @ 23A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 4.5A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
- Vgs (Max): ±8V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
- Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Dual
- Package / Case: PowerPAK? SC-70-6 Dual
|
Package: PowerPAK? SC-70-6 Dual |
Stock5,584 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 11.5nC @ 8V | 400pF @ 10V | ±8V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | 53 mOhm @ 3.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Renesas Electronics America |
MOSFET P-CH 20V 6A 6SON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 3A, 1.8V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-WFDFN Exposed Pad
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Package: 6-WFDFN Exposed Pad |
Stock2,864 |
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MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | - | 12.5nC @ 4.5V | 1240pF @ 10V | ±8V | - | 2.5W (Ta) | 62 mOhm @ 3A, 1.8V | 150°C (TJ) | Surface Mount | 6-HUSON (2x2) | 6-WFDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 60V 2.6A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 750mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223 (TO-261)
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock26,940 |
|
MOSFET (Metal Oxide) | 60V | 2.6A (Ta) | 10V | 4V @ 1mA | 14.3nC @ 10V | 492pF @ 25V | ±20V | - | 1W (Ta) | 170 mOhm @ 750mA, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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|
Infineon Technologies |
MOSFET N-CH 30V 50A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,016 |
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MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2800pF @ 15V | ±20V | - | 83W (Tc) | 6.1 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 21A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock7,232 |
|
MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 5V @ 250µA | 34nC @ 10V | 1500pF @ 100V | ±25V | - | 170W (Tc) | 160 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock17,964 |
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MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 526pF @ 100V | ±30V | - | 147W (Tc) | 600 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 12V 6A SSOT-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1699pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock468,528 |
|
MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 25nC @ 4.5V | 1699pF @ 6V | ±8V | - | 1.6W (Ta) | 26 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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Central Semiconductor Corp |
MOSFET N-CH 20V 650MA SOT523
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
- Vgs (Max): 8V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
|
Package: SOT-523 |
Stock4,544 |
|
MOSFET (Metal Oxide) | 20V | 650mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 1.58nC @ 4.5V | 100pF @ 16V | 8V | - | 300mW (Ta) | 230 mOhm @ 600mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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|
Diodes Incorporated |
MOSFET NCH 40V 100A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-4L
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
|
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock25,428 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | - | 3V @ 250µA | 83nC @ 10V | 4450pF @ 25V | - | - | 3.9W (Ta), 180W (Tc) | 3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 3A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3L
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock95,394 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 8nC @ 10V | 215pF @ 15V | ±20V | - | 1.4W (Ta) | 95 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
|
|
Vishay Siliconix |
MOSFET P-CH 30V 36A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9685pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,776 |
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MOSFET (Metal Oxide) | 30V | 36A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 285nC @ 10V | 9685pF @ 15V | ±20V | - | 3.5W (Ta), 7.8W (Tc) | 3.3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 7A TDSON-8-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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Package: - |
Stock16,875 |
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MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 4V @ 13µA | 5.6 nC @ 10 V | 430 pF @ 100 V | ±20V | - | 34W (Tc) | 225mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
AUTOMOTIVE_COOLMOS
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Renesas Electronics Corporation |
ABU / MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 77W (Tc)
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON (5x5.4)
- Package / Case: 8-PowerLDFN
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Package: - |
Stock14,940 |
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MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 5V, 10V | 2.5V @ 250µA | 51 nC @ 10 V | 2850 pF @ 25 V | ±20V | - | 1W (Ta), 77W (Tc) | 9.7mOhm @ 17.5A, 10V | 175°C | Surface Mount | 8-HSON (5x5.4) | 8-PowerLDFN |
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STMicroelectronics |
MOSFET N-CH 30V 80A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock31,371 |
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MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 4.5 V | 1640 pF @ 25 V | ±20V | - | 75W (Tc) | 5.2mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 3.5A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Stock26,211 |
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MOSFET (Metal Oxide) | 60 V | 3.5A (Tc) | 4V, 10V | 3V @ 1mA | 6.5 nC @ 5 V | 430 pF @ 10 V | ±20V | - | 950mW (Ta) | 70mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia USA Inc. |
PMX700ENZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta), 4.7W (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 400mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN0603-3 (SOT8013)
- Package / Case: 0201 (0603 Metric)
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Package: - |
Stock83,529 |
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MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 1.1 nC @ 10 V | 39 pF @ 30 V | ±20V | - | 300mW (Ta), 4.7W (Tc) | 800mOhm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN0603-3 (SOT8013) | 0201 (0603 Metric) |
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MOSLEADER |
Single P -30V 3.6A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 30V 34A/100A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 131 nC @ 10 V | 10000 pF @ 15 V | ±20V | - | 2.5W (Ta), 139W (Tc) | 1.4mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Vishay Siliconix |
N-CHANNEL 80 V (D-S) 175C MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock23,730 |
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MOSFET (Metal Oxide) | 80 V | 34.2A (Ta), 153A (Tc) | 7.5V, 10V | 4V @ 250µA | 60 nC @ 10 V | 3020 pF @ 40 V | ±20V | - | 7.5W (Ta), 150W (Tc) | 2.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |