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Infineon Technologies |
MOSFET N-CH 55V 64A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,008 |
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MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 4V @ 250µA | 81nC @ 10V | 1970pF @ 25V | ±20V | - | 3.8W (Ta), 130W (Tc) | 14 mOhm @ 32A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,264 |
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MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 9.2nC @ 10V | 395pF @ 25V | ±30V | - | 52W (Tc) | 2.8 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 150V 4.2A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,624 |
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MOSFET (Metal Oxide) | 150V | 4.2A (Tc) | 10V | 4V @ 250µA | 7nC @ 10V | 230pF @ 25V | ±25V | - | 32W (Tc) | 800 mOhm @ 2.1A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V 11A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock15,300 |
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MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1490pF @ 25V | ±30V | - | 125W (Tc) | 380 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 48A TO-263AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 24A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock36,120 |
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MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1800pF @ 25V | ±20V | - | 100W (Tc) | 25 mOhm @ 24A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET COOL MOS SAWED WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock5,296 |
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IXYS |
MOSFET N-CH 600V 20A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,656 |
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MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 3.5V @ 1.1mA | 45nC @ 10V | 1520pF @ 100V | ±20V | Super Junction | - | 200 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET P-CH 65V 120A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,800 |
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MOSFET (Metal Oxide) | 65V | 120A (Tc) | 10V | 4V @ 250µA | 185nC @ 10V | 13200pF @ 25V | ±15V | - | 298W (Tc) | 10 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock61,260 |
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MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 410pF @ 25V | ±20V | - | 3.1W (Ta), 50W (Tc) | 1.8 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 3.6A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1228pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock67,080 |
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MOSFET (Metal Oxide) | 200V | 3.6A (Ta) | 10V | 4.5V @ 250µA | 43nC @ 10V | 1228pF @ 100V | ±20V | - | 3.2W (Ta), 70W (Tc) | 130 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 18.5A U8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 771pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.64W (Ta), 33.8W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock5,392 |
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MOSFET (Metal Oxide) | 25V | 18.5A (Ta), 66A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 12.4nC @ 10V | 771pF @ 12V | ±20V | - | 2.64W (Ta), 33.8W (Tc) | 4.8 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 981pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,992 |
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MOSFET (Metal Oxide) | 700V | 11A (Tc) | 10V | 4V @ 250µA | 18.8nC @ 10V | 981pF @ 100V | ±30V | - | 125W (Tc) | 380 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 100V 12A PWRFLAT5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 50V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 72W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerSMD, Flat Leads
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Package: 8-PowerSMD, Flat Leads |
Stock7,664 |
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MOSFET (Metal Oxide) | 100V | 46A (Tc) | 10V | 4.5V @ 250µA | 25nC @ 10V | 1640pF @ 50V | 20V | - | 5W (Ta), 72W (Tc) | 18 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 73A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock20,976 |
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MOSFET (Metal Oxide) | 100V | 73A (Tc) | 6V, 10V | 3.8V @ 49µA | 37nC @ 10V | 2730pF @ 50V | ±20V | - | 100W (Tc) | 8.3 mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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IXYS |
MOSFET P-CH 85V 96A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 48A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,480 |
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MOSFET (Metal Oxide) | 85V | 96A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 13100pF @ 25V | ±15V | - | 298W (Tc) | 13 mOhm @ 48A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock36,978 |
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MOSFET (Metal Oxide) | 30V | 14A (Ta), 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 19nC @ 10V | 1600pF @ 15V | ±20V | - | 2.5W (Ta), 30W (Tc) | 7.9 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6.5A 6-SSOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-SSOT
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock52,224 |
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MOSFET (Metal Oxide) | 30V | 6.5A (Ta), 8A (Tc) | 4.5V, 10V | 3V @ 250µA | 7.4nC @ 10V | 465pF @ 15V | ±20V | - | 1.6W (Ta) | 23 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-SSOT | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 100V 23A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 117 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock388,068 |
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MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | ±20V | - | 140W (Tc) | 117 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 8V~24V X1-DFN1006-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 720mW (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.6 nC @ 4.5 V | 42 pF @ 16 V | ±6V | - | 720mW (Ta) | 450mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |
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Sanyo |
MOSFET P-CH 12V 5A SC88FL/ MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 6 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
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Package: - |
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MOSFET (Metal Oxide) | 12 V | 5A (Ta) | - | 1.4V @ 1mA | 6.9 nC @ 4.5 V | 660 pF @ 6 V | ±10V | - | 1.5W (Ta) | 43mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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Motorola |
NFET D2PAK 400V 1.8R TR
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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onsemi |
MOSFET N-CH 60V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 5V | 2V @ 250µA | 32 nC @ 5 V | 1140 pF @ 25 V | ±15V | - | 1.36W (Ta), 62.5W (Tj) | 45mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V X2-DFN100
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 192mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW
- Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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Package: - |
Stock30,000 |
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MOSFET (Metal Oxide) | 65 V | 192mA (Ta) | 2.5V, 5V | 2.1V @ 250µA | 4.1 nC @ 5 V | 36 pF @ 30 V | ±20V | - | 500mW | 8Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1006-3 | 3-UFDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 3.7A TSOT26
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 6 nC @ 4.5 V | 443 pF @ 10 V | ±10V | - | 1.2W (Ta) | 80mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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MOSLEADER |
N 30V SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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MOSLEADER |
Single N 20V 3.5A SOT-23S
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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onsemi |
MOSFET N-CH 40V 22A/103A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 22A (Ta), 103A (Tc) | 10V | 3.5V @ 60µA | 23 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 3.2W (Ta), 69W (Tc) | 3.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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IXYS |
MOSFET N-CH 300V 100A TO268HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268HV (IXFT)
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
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MOSFET (Metal Oxide) | 300 V | 100A (Tc) | 10V | 4.5V @ 4mA | 122 nC @ 10 V | 7660 pF @ 25 V | ±20V | - | 480W (Tc) | 13.5mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV (IXFT) | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |