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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 16A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MP
- Package / Case: DirectFET? Isometric MP
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Package: DirectFET? Isometric MP |
Stock2,512 |
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MOSFET (Metal Oxide) | 20V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17nC @ 4.5V | 1250pF @ 10V | ±20V | - | 2.3W (Ta), 89W (Tc) | 5.6 mOhm @ 16A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MP | DirectFET? Isometric MP |
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ON Semiconductor |
MOSFET N-CH 30V 13A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock2,944 |
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MOSFET (Metal Oxide) | 30V | 13A (Ta), 130A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 48nC @ 4.5V | 4500pF @ 12V | ±20V | - | 900mW (Ta), 86.2W (Tc) | 3 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 11A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock3,504 |
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MOSFET (Metal Oxide) | 30V | 11.3A (Ta), 79A (Tc) | - | 2.5V @ 250µA | 23nC @ 4.5V | 2142pF @ 12V | - | - | - | 6 mOhm @ 30A, 10V | - | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 1.6A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock240,000 |
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MOSFET (Metal Oxide) | 500V | 1.6A (Tc) | 10V | 5V @ 250µA | 8nC @ 10V | 230pF @ 25V | ±30V | - | 2.5W (Ta), 30W (Tc) | 5.3 Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 270A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,624 |
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MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | ±16V | - | 380W (Tc) | 2.4 mOhm @ 165A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 200V 100A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 100A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,288 |
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MOSFET (Metal Oxide) | 200V | 100A | 10V | 4V @ 8mA | 380nC @ 10V | 9000pF @ 25V | ±20V | - | 520W (Tc) | 23 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 60A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 33 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock3,232 |
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MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 4V @ 4mA | 155nC @ 10V | 5200pF @ 25V | ±20V | - | 300W (Tc) | 33 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 54A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,560 |
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MOSFET (Metal Oxide) | 300V | 54A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Sanken |
MOSFET N-CH 60V 39A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 28.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock5,232 |
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MOSFET (Metal Oxide) | 60V | 39A (Tc) | 4.5V, 10V | 2.5V @ 650µA | 38.6nC @ 10V | 2520pF @ 25V | ±20V | - | 38W (Tc) | 8.8 mOhm @ 28.5A, 10V | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Stub Leads, IPak
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Package: TO-251-3 Stub Leads, IPak |
Stock2,528 |
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MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 1480pF @ 50V | ±20V | - | 50W (Tc) | 90 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
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Fairchild/ON Semiconductor |
MOSFET N-CH 650V 24A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3737pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock4,560 |
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MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 5V @ 2.4mA | 93nC @ 10V | 3737pF @ 100V | ±20V | - | 298W (Tc) | 150 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 20V 1A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,244,292 |
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MOSFET (Metal Oxide) | 20V | 1A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 2.5nC @ 5V | 165pF @ 5V | ±20V | - | 400mW (Ta) | 180 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 500V 17A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,576 |
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MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1330pF @ 50V | ±25V | - | 30W (Tc) | 190 mOhm @ 8.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 26A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock8,880 |
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MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 4V @ 250µA | 86nC @ 10V | 1980pF @ 100V | ±30V | - | 250W (Tc) | 145 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 43A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock56,352 |
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MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | - | 200W (Tc) | 42 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET P-CH 60V 78A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 78A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 40W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 39A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3SG
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock7,896 |
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MOSFET (Metal Oxide) | 60V | 78A (Ta) | 4V, 10V | - | 285nC @ 10V | 13200pF @ 20V | ±20V | - | 2W (Ta), 40W (Tc) | 6.5 mOhm @ 39A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3SG | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock3,920 |
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MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 2600pF @ 25V | ±20V | - | 190W (Tc) | 400 mOhm @ 8.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 11.8A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 706pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock13,056 |
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MOSFET (Metal Oxide) | 80V | 11.8A (Tc) | 5V | 2.1V @ 1mA | 6.2nC @ 5V | 706pF @ 25V | ±10V | - | 37W (Tc) | 98 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Renesas Electronics Corporation |
MOSFET N-CH 30V 30A 8WPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 10.7mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-PowerWDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 30A (Ta) | - | - | 6.3 nC @ 4.5 V | 860 pF @ 10 V | - | - | 25W (Tc) | 10.7mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 87A/49A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock7,425 |
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MOSFET (Metal Oxide) | 40 V | 49A (Tc) | 4.5V, 10V | 2.4V @ 200µA | 30 nC @ 10 V | 2700 pF @ 20 V | ±20V | - | 81W (Tc) | 6mOhm @ 24.5A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 135A PWRDI5060-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 1.5W
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock23,754 |
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MOSFET (Metal Oxide) | 30 V | 135A (Tc) | 5V, 10V | 2.6V @ 250µA | 127 nC @ 10 V | 3775 pF @ 15 V | ±25V | - | 1.5W | 3.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 44.6W (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock12,681 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta), 33A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 28 nC @ 10 V | 1680 pF @ 20 V | ±20V | - | 2W (Ta), 44.6W (Tc) | 21mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 40V PWRDI3333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 54.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 35.7W (Tc)
- Rds On (Max) @ Id, Vgs: 7.9mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 12.1A (Ta), 54.8A (Tc) | 4.5V, 10V | 3V @ 250µA | 17.1 nC @ 10 V | 1179 pF @ 20 V | ±20V | - | 1.9W (Ta), 35.7W (Tc) | 7.9mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 4.05A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 8.1A (Tj) | 10V | 4V @ 250µA | 38 nC @ 10 V | 1000 pF @ 25 V | ±30V | - | 38W (Tc) | 450mOhm @ 4.05A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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onsemi |
MOSFET P-CH 60V 15A/100A 5DFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 15A (Ta), 100A (Tc) | 4.5V, 10V | 2.6V @ 1mA | 160 nC @ 10 V | 7700 pF @ 20 V | ±20V | - | 3.8W (Ta), 200W (Tc) | 7.7mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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onsemi |
MOSFET N-CH 600V 4A DPAK3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: DPAK3 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 5V @ 250µA | 13 nC @ 10 V | 600 pF @ 25 V | ±25V | - | 83W (Tc) | 2Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | DPAK3 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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onsemi |
NFET DPAK SPECIAL
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Microsemi Corporation |
MOSFET N-CH 1000V 22A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1000 V | 22A (Tj) | - | 4V @ 1mA | 480 nC @ 10 V | 9000 pF @ 25 V | - | - | - | 430mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |