Page 126 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB100N06S3L-03
Infineon Technologies

MOSFET N-CH 55V 100A TO263-3-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock9,768
IRF7460TRPBF
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,126,476
IRFS4610
Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,488
AON2705_001
Alpha & Omega Semiconductor Inc.

MOSFET P-CH W/DIO 6DFN

Package: 6-WDFN Exposed Pad

Stock4,896
NTTFS4941NTAG
ON Semiconductor

MOSFET N-CH 30V 8.3A 8WDFN

Package: 8-PowerWDFN

Stock2,192
IRC830PBF
Vishay Siliconix

MOSFET N-CH 500V 4.5A TO-220-5

Package: TO-220-5

Stock7,236
AUIRFSL8407
Infineon Technologies

MOSFET N-CH 40V 195A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,736
NVTFS4C13NTAG
ON Semiconductor

MOSFET N-CH 30V 40A U8FL

Package: 8-PowerWDFN

Stock6,320
IPP039N04LGXKSA1
Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

Package: TO-220-3

Stock17,316
BUK6207-55C,118
Nexperia USA Inc.

MOSFET N-CH 55V 90A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,976
TK13A65U(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13A TO-220SIS

Package: TO-220-3 Full Pack

Stock14,328
FQA16N50_F109
Fairchild/ON Semiconductor

MOSFET N-CH 500V 16A

Package: TO-3P-3, SC-65-3

Stock7,824
R6020ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 20A TO247

Package: TO-247-3

Stock10,812
IPB60R099CP
Infineon Technologies

MOSFET N-CH 600V 31A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
DMN65D8LFB-7B
Diodes Incorporated

MOSFET N-CH 60V 260MA 3DFN

Package: 3-UFDFN

Stock295,560
PJQ5462A-AU_R2_000A1
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Package: -

Stock16,092
AOTL66608
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 73.5A/400A TOLLA

Package: -

Stock27,012
PSMN5R6-100YSFX
Nexperia USA Inc.

MOSFET N-CH 100V 158A LFPAK56

Package: -

Request a Quote
NTH4L030N120M3S
onsemi

SILICON CARBIDE (SIC) MOSFET EL

Package: -

Stock960
FCH041N65F
Fairchild Semiconductor

N-CHANNEL, MOSFET

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB100N06S3L-03	Infineon Technologies	MOSFET N-CH 55V 100A TO263-3-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,768	MOSFET (Metal Oxide)	55V	100A (Tc)	5V, 10V	2.2V @ 230µA	550nC @ 10V	26240pF @ 25V	±16V	-	300W (Tc)	2.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7460TRPBF	Infineon Technologies	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,126,476	MOSFET (Metal Oxide)	20V	12A (Ta)	4.5V, 10V	3V @ 250µA	19nC @ 4.5V	2050pF @ 10V	±20V	-	2.5W (Ta)	10 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFS4610	Infineon Technologies	MOSFET N-CH 100V 73A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,488	MOSFET (Metal Oxide)	100V	73A (Tc)	10V	4V @ 100µA	140nC @ 10V	3550pF @ 50V	±20V	-	190W (Tc)	14 mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AON2705_001	Alpha & Omega Semiconductor Inc.	MOSFET P-CH W/DIO 6DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-DFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock4,896	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	6-DFN (2x2)	6-WDFN Exposed Pad
NTTFS4941NTAG	ON Semiconductor	MOSFET N-CH 30V 8.3A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1619pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,192	MOSFET (Metal Oxide)	30V	8.3A (Ta), 46A (Tc)	4.5V, 10V	2.2V @ 250µA	22.8nC @ 10V	1619pF @ 15V	±20V	-	840mW (Ta), 25.5W (Tc)	6.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IRC830PBF	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock7,236	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	±20V	Current Sensing	74W (Tc)	1.5 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
AUIRFSL8407	Infineon Technologies	MOSFET N-CH 40V 195A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,736	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	4V @ 150µA	225nC @ 10V	7330pF @ 25V	±20V	-	230W (Tc)	2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NVTFS4C13NTAG	ON Semiconductor	MOSFET N-CH 30V 40A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock6,320	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2.1V @ 250µA	15.2nC @ 10V	770pF @ 15V	±20V	-	3W (Ta), 26W (Tc)	9.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
IPP039N04LGXKSA1	Infineon Technologies	MOSFET N-CH 40V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock17,316	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2V @ 45µA	78nC @ 10V	6100pF @ 25V	±20V	-	94W (Tc)	3.9 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
BUK6207-55C,118	Nexperia USA Inc.	MOSFET N-CH 55V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,976	MOSFET (Metal Oxide)	55V	90A (Tc)	10V	2.8V @ 1mA	82nC @ 10V	5160pF @ 25V	±20V	-	158W (Tc)	7.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
TK13A65U(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,328	MOSFET (Metal Oxide)	650V	13A (Ta)	10V	5V @ 1mA	17nC @ 10V	950pF @ 10V	±30V	-	40W (Tc)	380 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
FQA16N50_F109	Fairchild/ON Semiconductor	MOSFET N-CH 500V 16A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,824	MOSFET (Metal Oxide)	500V	16A (Tc)	10V	5V @ 250µA	75nC @ 10V	3000pF @ 25V	±30V	-	200W (Tc)	320 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
R6020ENZ1C9	Rohm Semiconductor	MOSFET N-CH 600V 20A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock10,812	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	4V @ 1mA	60nC @ 10V	1400pF @ 25V	±20V	-	120W (Tc)	196 mOhm @ 9.5A, 10V	150°C (TJ)	Through Hole	TO-247	TO-247-3
IPB60R099CP	Infineon Technologies	MOSFET N-CH 600V 31A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	3.5V @ 1.2mA	80nC @ 10V	2800pF @ 100V	±20V	-	255W (Tc)	99 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN65D8LFB-7B	Diodes Incorporated	MOSFET N-CH 60V 260MA 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 430mW (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 115mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1006-3 Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock295,560	MOSFET (Metal Oxide)	60V	260mA (Ta)	5V, 10V	2V @ 250µA	-	25pF @ 25V	±20V	-	430mW (Ta)	3 Ohm @ 115mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN
PJQ5462A-AU_R2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Stock16,092	MOSFET (Metal Oxide)	60 V	8.5A (Ta), 42A (Tc)	4.5V, 10V	2.5V @ 250µA	40 nC @ 10 V	2142 pF @ 25 V	±20V	-	2.4W (Ta), 71.4W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
AOTL66608	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 73.5A/400A TOLLA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 73.5A (Ta), 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 500W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLLA Package / Case: 8-PowerSFN	Package: -	Stock27,012	MOSFET (Metal Oxide)	60 V	73.5A (Ta), 400A (Tc)	6V, 10V	3.3V @ 250µA	300 nC @ 10 V	14200 pF @ 30 V	±20V	-	8.3W (Ta), 500W (Tc)	0.85mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TOLLA	8-PowerSFN
PSMN5R6-100YSFX	Nexperia USA Inc.	MOSFET N-CH 100V 158A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W Rds On (Max) @ Id, Vgs: - Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56; Power-SO8 Package / Case: SOT-1023, 4-LFPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A (Tj)	10V	-	63 nC @ 10 V	-	±20V	-	294W	-	175°C (TJ)	Surface Mount	LFPAK56; Power-SO8	SOT-1023, 4-LFPAK
NTH4L030N120M3S	onsemi	SILICON CARBIDE (SIC) MOSFET EL FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock960	SiC (Silicon Carbide Junction Transistor)	1200 V	73A (Tc)	18V	4.4V @ 15mA	107 nC @ 18 V	2430 pF @ 800 V	+22V, -10V	-	313W (Tc)	39mOhm @ 30A, 18V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
FCH041N65F	Fairchild Semiconductor	N-CHANNEL, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDD6035AL	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Ta), 46A (Tc)	4.5V, 10V	3V @ 250µA	18 nC @ 5 V	1230 pF @ 15 V	±20V	-	1.5W (Ta), 56W (Tc)	12mOhm @ 12A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
MSC025SMA120J	Microchip Technology	SICFET N-CH 1.2KV 77A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	77A (Tc)	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	278W (Tc)	31mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
3LN03M-TL-E	Sanyo	N-CHANNEL SILICON MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA650TT-E1-A	Renesas Electronics Corporation	MOSFET P-CH 12V 5A 6WSOF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WSOF Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	5A (Ta)	-	1.5V @ 1mA	5.5 nC @ 10 V	610 pF @ 10 V	-	-	200mW (Ta)	50mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	6-WSOF	6-SMD, Flat Leads
FDBL86210-F085	onsemi	MOSFET N-CH 150V 169A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tj) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Stock16,566	MOSFET (Metal Oxide)	150 V	169A (Tc)	10V	4V @ 250µA	90 nC @ 10 V	5805 pF @ 75 V	±20V	-	500W (Tj)	6.3mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
TK200F04N1L-LXGQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 200A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-220SM(W) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock3,000	MOSFET (Metal Oxide)	40 V	200A (Ta)	6V, 10V	3V @ 1mA	214 nC @ 10 V	14920 pF @ 10 V	±20V	-	375W (Tc)	0.9mOhm @ 100A, 10V	175°C	Surface Mount	TO-220SM(W)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIR1309DP-T1-GE3	Vishay Siliconix	P-CHANNEL 30 V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19.1A (Ta), 65.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock15,486	MOSFET (Metal Oxide)	30 V	19.1A (Ta), 65.7A (Tc)	4.5V, 10V	2.5V @ 250µA	87 nC @ 10 V	3250 pF @ 15 V	±25V	-	4.8W (Ta), 56.8W (Tc)	7.3mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIHD14N60ET4-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,880	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	4V @ 250µA	64 nC @ 10 V	1205 pF @ 100 V	±30V	-	147W (Tc)	309mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63