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Infineon Technologies |
MOSFET N-CH WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock5,792 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock25,500 |
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MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 4.5V, 10V | 1.8V @ 108µA | 6.4nC @ 10V | 140pF @ 25V | ±20V | - | 1.8W (Ta) | 6 Ohm @ 350mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 14A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MP
- Package / Case: DirectFET? Isometric MP
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Package: DirectFET? Isometric MP |
Stock17,628 |
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MOSFET (Metal Oxide) | 30V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 2.35V @ 250µA | 17nC @ 4.5V | 1330pF @ 15V | ±20V | - | 2.3W (Ta), 42W (Tc) | 7.7 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MP | DirectFET? Isometric MP |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock5,712 |
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MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 1V @ 250µA | 17nC @ 5V | - | ±12V | - | 2.5W (Tc) | 25 mOhm @ 7A, 4.5V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 27A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock7,840 |
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MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | - | 68W (Tc) | 45 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 54A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock38,400 |
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MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | - | 3.8W (Ta), 71W (Tc) | 14 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 990MA TO-205
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AD, TO-39-3 Metal Can
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Package: TO-205AD, TO-39-3 Metal Can |
Stock6,368 |
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MOSFET (Metal Oxide) | 60V | 990mA (Tc) | 5V, 10V | 2V @ 1mA | - | 50pF @ 25V | ±20V | - | 725mW (Ta), 6.25W (Tc) | 3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AD, TO-39-3 Metal Can |
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Vishay Siliconix |
MOSFET P-CH 12V 0.85A SOT323-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 290mW (Ta)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-3
- Package / Case: SC-70, SOT-323
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Package: SC-70, SOT-323 |
Stock155,424 |
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MOSFET (Metal Oxide) | 12V | 850mA (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 5nC @ 4.5V | - | ±8V | - | 290mW (Ta) | 290 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 25V 2.5A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
- Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock3,184 |
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MOSFET (Metal Oxide) | 25V | 2.5A (Ta) | 4.5V, 10V | 2V @ 250µA | 1.8nC @ 5V | 115pF @ 20V | ±20V | - | 1.04W (Ta), 20.8W (Tc) | 95 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 1000V 21A PLUS 247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 5.5V @ 4mA | 170nC @ 10V | 6900pF @ 25V | ±20V | - | 500W (Tc) | 500 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 180A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock13,980 |
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MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4V @ 8mA | 390nC @ 10V | 10900pF @ 25V | ±20V | - | 560W (Tc) | 8 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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Fairchild/ON Semiconductor |
MOSFET N CH 60V 13.5A 8PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4615pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6), Power56
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock28,920 |
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MOSFET (Metal Oxide) | 60V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 3V @ 250µA | 63nC @ 10V | 4615pF @ 30V | ±20V | - | 2.5W (Ta), 69W (Tc) | 8.2 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 2.9A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 568pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,625,052 |
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MOSFET (Metal Oxide) | 30V | 2.9A (Ta) | 2.5V, 4.5V | 700mV @ 250µA | 6.7nC @ 4.5V | 568pF @ 15V | ±12V | - | 1W (Ta) | 80 mOhm @ 3.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 80V LFPAK56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 6506pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 194W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: SC-100, SOT-669 |
Stock4,400 |
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MOSFET (Metal Oxide) | 80V | 84A (Tc) | 5V, 10V | 2.1V @ 1mA | 44.2nC @ 5V | 6506pF @ 25V | ±20V | - | 194W (Tc) | 10 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 40V 90A TO252AA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock17,118 |
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MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 155nC @ 10V | 6675pF @ 20V | ±20V | - | 136W (Tc) | 9.4 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 100A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 234W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock23,418 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 1mA | 79nC @ 10V | 6200pF @ 25V | ±20V | - | 234W (Tc) | 2.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390,120 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock9,468 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 30nC @ 10V | 2400pF @ 15V | ±20V | - | 2.1W (Ta), 45W (Tc) | 5.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock25,314 |
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MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | ±20V | - | 83W (Tc) | 1.2 Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3693pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 157W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock23,244 |
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MOSFET (Metal Oxide) | 55V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 31nC @ 5V | 3693pF @ 25V | ±15V | - | 157W (Tc) | 10 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 11.5A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock10,922,652 |
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MOSFET (Metal Oxide) | 100V | 11.5A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 50nC @ 10V | 2420pF @ 50V | ±20V | - | 3.1W (Ta) | 12 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251AA)
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
Stock21,585 |
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MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 10V | 4V @ 250µA | 20 nC @ 10 V | 370 pF @ 25 V | ±20V | - | 45W (Tc) | 75mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251AA) | TO-251-3 Short Leads, IPAK, TO-251AA |
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Alpha & Omega Semiconductor Inc. |
N
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9320 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 3.6V @ 250µA | 175 nC @ 10 V | 9320 pF @ 100 V | ±20V | - | 500W (Tc) | 40mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 24W (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock14,925 |
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MOSFET (Metal Oxide) | 60 V | 5A (Ta), 18A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20 nC @ 10 V | 1173 pF @ 25 V | ±20V | - | 2W (Ta), 24W (Tc) | 34mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
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Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 392 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 21W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock12,264 |
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MOSFET (Metal Oxide) | 30 V | 8A (Ta), 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 4.3 nC @ 4.5 V | 392 pF @ 25 V | ±20V | - | 2W (Ta), 21W (Tc) | 18mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 700V 12A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,850 |
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MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 4V @ 250µA | 22.5 nC @ 10 V | 1360 pF @ 100 V | ±20V | - | 156W (Tc) | 360mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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onsemi |
PCH 2.5V DRIVE SERIES
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Harris Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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