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Infineon Technologies |
MOSFET N-CH 55V 80A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 68A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock14,028 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 4540pF @ 25V | ±20V | - | 250W (Tc) | 6.6 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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|
Infineon Technologies |
MOSFET N-CH 100V 9.7A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock390,096 |
|
MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | - | 48W (Tc) | 200 mOhm @ 5.7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Vishay Siliconix |
MOSFET P-CH 8V 5.4A SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.1A, 4.5V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock961,728 |
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MOSFET (Metal Oxide) | 8V | 5.4A (Tc) | 1.8V, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 740pF @ 4V | ±8V | - | 960mW (Ta), 1.7W (Tc) | 40 mOhm @ 4.1A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock28,200 |
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MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 4V @ 250µA | 85nC @ 20V | 1090pF @ 25V | ±20V | - | 125W (Tc) | 25 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 0.9A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 16W (Tc)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 450mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock7,328 |
|
MOSFET (Metal Oxide) | 500V | 900mA (Tc) | 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | ±30V | - | 16W (Tc) | 9 Ohm @ 450mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 675µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,856 |
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MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 3.9V @ 675µA | 63nC @ 10V | 1600pF @ 25V | ±20V | - | 156W (Tc) | 280 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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|
Infineon Technologies |
MOSFET P-CH TO262-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14790pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7,056 |
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MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 340µA | 205nC @ 10V | 14790pF @ 25V | ±20V | - | 136W (Tc) | 3.8 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Microsemi Corporation |
MOSFET N-CH 1200V 171A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 171A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 5000W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
|
Package: SP6 |
Stock5,808 |
|
MOSFET (Metal Oxide) | 1200V | 171A | 10V | 5V @ 30mA | 1650nC @ 10V | 43500pF @ 25V | ±30V | - | 5000W (Tc) | 80 mOhm @ 85.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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IXYS |
MOSFET N-CH 1000V 4A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock3,232 |
|
MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 5V @ 1.5mA | 39nC @ 10V | 1050pF @ 25V | ±20V | - | 150W (Tc) | 3 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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|
Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock74,532 |
|
MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 3.7 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 8A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 18W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock7,248 |
|
MOSFET (Metal Oxide) | 100V | 8A (Ta) | 10V | 4V @ 1mA | 12.9nC @ 10V | 530pF @ 10V | ±20V | - | 18W (Tc) | 120 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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|
Texas Instruments |
MOSFET P-CH 15V 2.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 15V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): +2V, -15V
- FET Feature: -
- Power Dissipation (Max): 791mW (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock378,504 |
|
MOSFET (Metal Oxide) | 15V | 2.3A (Ta) | 2.7V, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | +2V, -15V | - | 791mW (Ta) | 90 mOhm @ 2.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 20V 3.3A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.1W (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,688 |
|
MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 7.8nC @ 10V | 353pF @ 15V | ±20V | Schottky Diode (Isolated) | 1.1W (Ta) | 85 mOhm @ 3.05A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 40V TO-220AB-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9310pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock390,000 |
|
MOSFET (Metal Oxide) | 40V | 20A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 185nC @ 10V | 9310pF @ 25V | ±20V | - | 188W (Tc) | 3.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
STMicroelectronics |
MOSFET N-CH 60V 80A F7 TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock6,176 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 250µA | 55nC @ 10V | 3100pF @ 10V | ±20V | - | 158W (Tc) | 3.5 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 57A 8PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3), Power33
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock2,608 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tc) | 6V, 10V | 4V @ 110µA | 20nC @ 6V | 2090pF @ 50V | ±20V | - | 54W (Tc) | 8.5 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerWDFN |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 13.5A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6), Power56
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock336,720 |
|
MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 3V @ 250µA | 24nC @ 10V | 1605pF @ 15V | ±20V | - | 2.5W (Ta), 29W (Tc) | 10 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
|
|
STMicroelectronics |
MOSFET N-CH 100V 46A I2PAKFP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3305pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I2Pak
|
Package: TO-262-3 Full Pack, I2Pak |
Stock12,372 |
|
MOSFET (Metal Oxide) | 100V | 46A (Tc) | 10V | 4V @ 250µA | 57nC @ 10V | 3305pF @ 25V | ±20V | - | 35W (Tc) | 9.6 mOhm @ 23A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
|
|
Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock390,000 |
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MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 200 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,099,944 |
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MOSFET (Metal Oxide) | 60V | 24A (Ta) | 5V | 2V @ 250µA | 32nC @ 5V | 1140pF @ 25V | ±15V | - | 1.36W (Ta), 62.5W (Tj) | 45 mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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MOSLEADER |
P -30V -5A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 73µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 3.5V @ 73µA | 56 nC @ 10 V | 3840 pF @ 40 V | ±20V | - | 136W (Tc) | 7mOhm @ 73A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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onsemi |
SICFET N-CH 900V 118A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V
- Vgs (Max): +19V, -10V
- FET Feature: -
- Power Dissipation (Max): 503W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock918 |
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SiCFET (Silicon Carbide) | 900 V | 118A (Tc) | 15V | 4.3V @ 20mA | 196 nC @ 15 V | 4415 pF @ 450 V | +19V, -10V | - | 503W (Tc) | 28mOhm @ 60A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 49.2A (Ta) | 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | 6500 pF @ 300 V | ±30V | - | 400W (Tc) | 57mOhm @ 24.6A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
SIC DISCRETE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
MOSFET_(20V 40V)
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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onsemi |
SF3 800V 600MOHM TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 8A (Tj) | 10V | 3.8V @ 180µA | 15.5 nC @ 10 V | 725 pF @ 400 V | ±20V | - | 28W (Tc) | 600mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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