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Infineon Technologies |
MOSFET P-CH 40V 4.6A 8-TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: 8-TSSOP (0.173", 4.40mm Width) |
Stock4,672 |
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MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 38nC @ 4.5V | 3150pF @ 25V | ±20V | - | 1.5W (Ta) | 46 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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ON Semiconductor |
MOSFET P-CH 12V 5A MCPH6
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock412,344 |
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- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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Renesas Electronics America |
MOSFET N-CH 40V 100A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,160 |
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MOSFET (Metal Oxide) | 40V | 100A (Ta) | 10V | - | 100nC @ 10V | 5550pF @ 25V | ±20V | - | 1.5W (Ta), 119W (Tc) | 3.3 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.6A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock192,012 |
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MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | - | 1.2V @ 250µA | 6nC @ 4.5V | 200pF @ 10V | - | - | - | 80 mOhm @ 3.6A, 4.5V | - | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET N-CH 200V 22A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 11A, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock1,020,552 |
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MOSFET (Metal Oxide) | 200V | 22A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 800pF @ 25V | ±20V | - | 100W (Tc) | 105 mOhm @ 11A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET P-CH 200V 120A TO-264
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock2,496 |
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MOSFET (Metal Oxide) | 200V | 120A (Tc) | - | 4.5V @ 250µA | 740nC @ 10V | 73000pF @ 25V | - | - | - | 30 mOhm @ 60A, 10V | - | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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Microchip Technology |
MOSFET N-CH 25V 480MA SOT89-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock5,088 |
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MOSFET (Metal Oxide) | 25V | 480mA (Tj) | 3V, 10V | 2.5V @ 1mA | - | 200pF @ 25V | ±20V | - | 1.6W (Tc) | 3.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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ON Semiconductor |
MOSFET P-CH 30V 2A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88FL/ MCPH6
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock3,920 |
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MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 800mW (Ta) | 150 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 560V 21A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock790,524 |
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MOSFET (Metal Oxide) | 560V | 21A (Tc) | 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 30V 80A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 40A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock48,972 |
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MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 42nC @ 4.5V | 3100pF @ 25V | ±20V | - | 140W (Tc) | 3.5 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 15A TO220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock21,480 |
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MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 4V @ 250µA | 17.2nC @ 10V | 841pF @ 100V | ±30V | - | 34W (Tc) | 290 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta). 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,576 |
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MOSFET (Metal Oxide) | 30V | 23A (Ta). 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 98nC @ 10V | 7600pF @ 15V | ±20V | - | 2.5W (Ta), 83W (Tc) | 2.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 55A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock882,072 |
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MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | ±16V | - | 107W (Tc) | 19 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 60V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 29.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock38,856 |
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MOSFET (Metal Oxide) | 60V | 75A (Tc) | 5V | 2.1V @ 1mA | 29.8nC @ 5V | 4350pF @ 25V | ±10V | - | 137W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock16,680 |
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MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5V @ 250µA | 130nC @ 10V | 2760pF @ 25V | ±30V | - | 220W (Tc) | 320 mOhm @ 9.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 232pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock32,316 |
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MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 4V @ 250µA | 13.5nC @ 10V | 232pF @ 100V | ±25V | - | 60W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
DIODE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 5V, 10V | 2V @ 250µA | - | 50 pF @ 25 V | ±20V | - | 200mW (Ta) | 7.5Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Rohm Semiconductor |
600V 8A TO-220FM, PRESTOMOS WITH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
|
Package: - |
Stock3,240 |
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MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V, 15V | 6.5V @ 500µA | 21 nC @ 10 V | 900 pF @ 100 V | ±30V | - | 54W (Tc) | 300mOhm @ 3A, 15V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 16.4A 4VSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
|
Package: - |
Stock7,497 |
|
MOSFET (Metal Oxide) | 600 V | 16.4A (Tc) | 10V | 3.5V @ 660µA | 32 nC @ 10 V | 1520 pF @ 100 V | ±20V | - | 139W (Tc) | 199mOhm @ 9.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 6.5A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: 3-SMD, SOT-23-3 Variant
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Package: - |
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MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 16 nC @ 4.5 V | 1160 pF @ 10 V | ±8V | - | 1.4W (Ta) | 22mOhm @ 6.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |
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onsemi |
T8 80V U8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 19A (Ta), 103A (Tc) | 6V, 10V | 4V @ 140µA | 38 nC @ 10 V | 2470 pF @ 40 V | ±20V | - | 3.8W (Ta), 115W (Tc) | 4.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 30V 22A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,844 |
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MOSFET (Metal Oxide) | 30 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 44 nC @ 10 V | 2800 pF @ 15 V | ±20V | - | - | 1.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: - |
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MOSFET (Metal Oxide) | 200 V | 12.8A (Tc) | 10V | 4V @ 250µA | 58 nC @ 10 V | 1700 pF @ 25 V | ±30V | - | 73W (Tc) | 180mOhm @ 6.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET_(20V 40V)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 133W (Tc)
- Rds On (Max) @ Id, Vgs: 1.32mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-LHDSO-10-1
- Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 230A (Tc) | 7V, 10V | 3V @ 60µA | 69 nC @ 10 V | 4810 pF @ 25 V | ±20V | - | 133W (Tc) | 1.32mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-LHDSO-10-1 | 10-LSOP (0.216", 5.48mm Width) Exposed Pad |
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Toshiba Semiconductor and Storage |
SMOS NCH I: 0.4A, V: 60V, P: 270
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 270mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: S-Mini
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock51,804 |
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MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 40 pF @ 10 V | ±20V | - | 270mW (Ta) | 1.5Ohm @ 100mA, 10V | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
SICFET N-CH 1200V 65A H2PAK-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 65A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 5.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
- Vgs (Max): +22V, -10V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 69mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
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SiCFET (Silicon Carbide) | 1200 V | 65A | 20V | 5.1V @ 1mA | 122 nC @ 20 V | 1900 pF @ 400 V | +22V, -10V | - | 270W (Tc) | 69mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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onsemi |
MOSFET N-CH 60V 22A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 22A (Ta) | 4.5V, 10V | 2V @ 250µA | 34 nC @ 10 V | 2200 pF @ 50 V | ±20V | - | 79W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) | 8-PowerTDFN, 5 Leads |
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Taiwan Semiconductor Corporation |
40V, 100A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5691 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (4.9x5.75)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock15,000 |
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MOSFET (Metal Oxide) | 40 V | 26A (Ta), 100A (Tc) | 7V, 10V | 3.6V @ 250µA | 89 nC @ 10 V | 5691 pF @ 25 V | ±20V | - | 136W (Tc) | 2.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PDFNU (4.9x5.75) | 8-PowerTDFN |