Page 129 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPB60R250CPATMA1
Infineon Technologies

MOSFET N-CH 650V 12A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,368
SSM3K309T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.7A TSM

Package: TO-236-3, SC-59, SOT-23-3

Stock6,336
AOD421
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 12.5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock17,964
FDD6N50TF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,440
PHB11N06LT,118
NXP

MOSFET N-CH 55V 10.3A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,808
FDD6676AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 90A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock218,556
IRFP460P
Vishay Siliconix

MOSFET N-CH 500V 20A TO-247AC

Package: TO-247-3

Stock4,032
IRF9640
Vishay Siliconix

MOSFET P-CH 200V 11A TO-220AB

Package: TO-220-3

Stock5,664
STB40NS15T4
STMicroelectronics

MOSFET N-CH 150V 40A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock18,060
NTMFS4965NFT3G
ON Semiconductor

MOSFET N-CH 30V 65A SO8FL

Package: 8-PowerTDFN

Stock5,888
AO4306
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 13A 8SOIC

Package: -

Stock3,424
DMP3068L-13
Diodes Incorporated

MOSFET P-CH 30V 3.9A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,224
IPZ40N04S53R1ATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

Package: 8-PowerTDFN

Stock3,712
IPA60R160C6
Infineon Technologies

MOSFET N-CH 600V 23.8A TO220-FP

Package: TO-220-3 Full Pack

Stock20,928
IPB180P04P4L02ATMA1
Infineon Technologies

MOSFET P-CH 40V 180A TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock4,512
FDD8896
Fairchild/ON Semiconductor

MOSFET N-CH 30V 94A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock456,804
DMPH6050SK3-13
Diodes Incorporated

MOSFET P-CH 60V 7.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock25,302
E3M0013120K
Wolfspeed, Inc.

SIC, MOSFET

Package: -

Request a Quote
RFD7N10LE
Harris Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
MCB200N06YA-TP
Micro Commercial Co

N-CHANNEL MOSFET, D2-PAK

Package: -

Stock2,310

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB60R250CPATMA1	Infineon Technologies	MOSFET N-CH 650V 12A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,368	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	3.5V @ 440µA	35nC @ 10V	1200pF @ 100V	±20V	-	104W (Tc)	250 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3K309T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 4.7A TSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,336	MOSFET (Metal Oxide)	20V	4.7A (Ta)	1.8V, 4V	-	-	1020pF @ 10V	±12V	-	700mW (Ta)	31 mOhm @ 4A, 4V	150°C (TJ)	Surface Mount	TSM	TO-236-3, SC-59, SOT-23-3
AOD421	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 12.5A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta), 18.8W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock17,964	MOSFET (Metal Oxide)	20V	12.5A (Ta)	2.5V, 4.5V	1.4V @ 250µA	4.6nC @ 4.5V	620pF @ 10V	±12V	-	2W (Ta), 18.8W (Tc)	75 mOhm @ 12.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N50TF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,440	MOSFET (Metal Oxide)	500V	6A (Tc)	10V	5V @ 250µA	16.6nC @ 10V	940pF @ 25V	±30V	-	89W (Tc)	900 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
PHB11N06LT,118	NXP	MOSFET N-CH 55V 10.3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,808	MOSFET (Metal Oxide)	55V	10.3A (Tc)	5V, 10V	2V @ 1mA	5.2nC @ 5V	330pF @ 25V	±15V	-	33W (Tc)	130 mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD6676AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Ta) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock218,556	MOSFET (Metal Oxide)	30V	90A (Ta)	4.5V, 10V	3V @ 1mA	64nC @ 10V	2500pF @ 15V	±20V	-	70W (Ta)	5.7 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFP460P	Vishay Siliconix	MOSFET N-CH 500V 20A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,032	MOSFET (Metal Oxide)	500V	20A (Tc)	-	4V @ 250µA	210nC @ 10V	4200pF @ 25V	-	-	-	270 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRF9640	Vishay Siliconix	MOSFET P-CH 200V 11A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,664	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	44nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	500 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB40NS15T4	STMicroelectronics	MOSFET N-CH 150V 40A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,060	MOSFET (Metal Oxide)	150V	40A (Tc)	10V	4V @ 250µA	110nC @ 10V	2420pF @ 25V	±20V	-	300W (Tc)	52 mOhm @ 20A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4965NFT3G	ON Semiconductor	MOSFET N-CH 30V 65A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,888	MOSFET (Metal Oxide)	30V	17.5A (Ta), 65A (Tc)	-	2.3V @ 1mA	30.5nC @ 10V	2100pF @ 15V	-	-	-	3.4 mOhm @ 30A, 10V	-	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AO4306	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 13A 8SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,424	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP3068L-13	Diodes Incorporated	MOSFET P-CH 30V 3.9A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,224	MOSFET (Metal Oxide)	30V	3.3A (Ta)	1.8V, 10V	1.3V @ 250µA	15.9nC @ 10V	708pF @ 15V	±12V	-	700mW (Ta)	72 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPZ40N04S53R1ATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,712	MOSFET (Metal Oxide)	40V	40A (Tc)	7V, 10V	3.4V @ 30µA	41nC @ 10V	2310pF @ 25V	±20V	-	71W (Tc)	3.1 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
IPA60R160C6	Infineon Technologies	MOSFET N-CH 600V 23.8A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,928	MOSFET (Metal Oxide)	600V	23.8A (Tc)	10V	3.5V @ 750µA	75nC @ 10V	1660pF @ 100V	±20V	-	34W (Tc)	160 mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
IPB180P04P4L02ATMA1	Infineon Technologies	MOSFET P-CH 40V 180A TO263-7 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock4,512	MOSFET (Metal Oxide)	40V	180A (Tc)	4.5V, 10V	2.2V @ 410µA	286nC @ 10V	18700pF @ 25V	±16V	-	150W (Tc)	2.4 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
FDD8896	Fairchild/ON Semiconductor	MOSFET N-CH 30V 94A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock456,804	MOSFET (Metal Oxide)	30V	17A (Ta), 94A (Tc)	4.5V, 10V	2.5V @ 250µA	60nC @ 10V	2525pF @ 15V	±20V	-	80W (Tc)	5.7 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
DMPH6050SK3-13	Diodes Incorporated	MOSFET P-CH 60V 7.2A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock25,302	MOSFET (Metal Oxide)	60V	7.2A (Ta), 23.6A (Tc)	4.5V, 10V	3V @ 250µA	25nC @ 10V	1377pF @ 30V	±20V	-	1.9W (Ta)	50 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
E3M0013120K	Wolfspeed, Inc.	SIC, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFD7N10LE	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	7A (Tc)	5V	2V @ 250µA	150 nC @ 10 V	360 pF @ 25 V	+10V, -8V	-	47W (Tc)	300mOhm @ 7A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
MCB200N06YA-TP	Micro Commercial Co	N-CHANNEL MOSFET, D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 200A Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 260W (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,310	MOSFET (Metal Oxide)	60 V	200A	6V, 10V	3.8V @ 250µA	65 nC @ 10 V	4165 pF @ 25 V	±20V	-	260W (Tj)	3.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF620PBF-BE3	Vishay Siliconix	MOSFET N-CH 200V 5.2A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock7,962	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	-	4V @ 250µA	14 nC @ 10 V	260 pF @ 25 V	±20V	-	50W (Tc)	800mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
VN10LPSTZ	Diodes Incorporated	MOSFET VMOS N-CHAN TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3, Formed Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	270mA (Ta)	5V, 10V	2.5V @ 1mA	-	60 pF @ 25 V	±20V	-	625mW (Ta)	5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3, Formed Leads
GSFU65R400	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 11.00A, 65 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	4V @ 250µA	30 nC @ 10 V	925 pF @ 100 V	±30V	-	31W (Tc)	400mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
2SK1093-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC040SMA120J	Microchip Technology	SICFET N-CH 1200V 53A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Stock30	SiCFET (Silicon Carbide)	1200 V	53A (Tc)	20V	2.8V @ 1mA	137 nC @ 20 V	1990 pF @ 1000 V	+25V, -10V	-	208W (Tc)	50mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
DMP2042UCP4-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V X1-DSN1010- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DSN1010-4 (Type C) Package / Case: 4-XFBGA	Package: -	Stock8,880	MOSFET (Metal Oxide)	20 V	3.4A (Ta)	2.5V, 4.5V	1.2V @ 250µA	2.5 nC @ 4.5 V	218 pF @ 10 V	-6V	-	860mW (Ta)	48mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DSN1010-4 (Type C)	4-XFBGA
R6524KNXC7G	Rohm Semiconductor	650V 24A TO-220FM, HIGH-SPEED SW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,970	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	5V @ 750µA	45 nC @ 10 V	1850 pF @ 25 V	±20V	-	74W (Tc)	185mOhm @ 11.3A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
IPD65R950CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 3.9A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36.7W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	650 V	3.9A (Tc)	10V	4.5V @ 200µA	14.1 nC @ 10 V	380 pF @ 100 V	±20V	-	36.7W (Tc)	950mOhm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63