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Infineon Technologies |
MOSFET N-CH 100V 9.3A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3), Power33
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock3,680 |
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MOSFET (Metal Oxide) | 100V | 9.3A (Ta), 34A (Tc) | 10V | 3.6V @ 50µA | 19nC @ 10V | 733pF @ 50V | ±20V | - | 2.8W (Ta), 37W (Tc) | 16.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 12A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock106,452 |
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MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | ±20V | - | 41W (Tc) | 110 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 300V 30A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 15A, 10V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock13,620 |
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MOSFET (Metal Oxide) | 300V | 30A (Tc) | 10V | 4V @ 250µA | 75nC @ 10V | 2500pF @ 50V | ±20V | - | 160W (Tc) | 90 mOhm @ 15A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 160A TO262-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-7
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Package: TO-262-7 |
Stock31,944 |
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MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | ±20V | - | 300W (Tc) | 2.6 mOhm @ 140A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-7 |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,208 |
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MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 110W (Tc) | 295 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
IXYS |
MOSFET N-CH 600V 50A TO268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock4,752 |
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MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 5V @ 4mA | 94nC @ 10V | 6300pF @ 25V | ±30V | - | 1040W (Tc) | 145 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 800V 3.6A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,832 |
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MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 4.5V @ 1mA | 24nC @ 10V | 685pF @ 25V | ±20V | - | 100W (Tc) | 3.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 150MA 3CP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-CP
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,866,012 |
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MOSFET (Metal Oxide) | 30V | 150mA (Ta) | 1.5V, 4V | - | 1.58nC @ 10V | 7pF @ 10V | ±10V | - | 250mW (Ta) | 3.7 Ohm @ 80mA, 4V | 150°C (TJ) | Surface Mount | 3-CP | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 60V 20A 8WDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 22W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock3,664 |
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MOSFET (Metal Oxide) | 60V | 7.6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 16nC @ 10V | 850pF @ 25V | ±20V | - | 3.2W (Ta), 22W (Tc) | 24 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Fairchild/ON Semiconductor |
MOSFET P-CH 150V 36A TO-3P
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 294W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock107,064 |
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MOSFET (Metal Oxide) | 150V | 36A (Tc) | 10V | 4V @ 250µA | 105nC @ 10V | 3320pF @ 25V | ±30V | - | 294W (Tc) | 90 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock4,960 |
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MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 3.5V @ 230µA | 23.4nC @ 10V | 512pF @ 100V | ±20V | - | 29W (Tc) | 520 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 11.3A TO-3PF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 320 mOhm @ 5.65A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: SC-94
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Package: SC-94 |
Stock4,272 |
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MOSFET (Metal Oxide) | 500V | 11.3A (Tc) | 10V | 5V @ 250µA | 75nC @ 10V | 3000pF @ 25V | ±30V | - | 110W (Tc) | 320 mOhm @ 5.65A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
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Nexperia USA Inc. |
MOSFET P-CH 30V 3A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.65W (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock6,048 |
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MOSFET (Metal Oxide) | 30V | 3A (Tc) | 10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | ±20V | - | 1.65W (Ta) | 250 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 60A 8SOP ADV
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 182nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 10900pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock2,240 |
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MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 4.5V | 1.2V @ 1mA | 182nC @ 5V | 10900pF @ 10V | ±12V | - | 78W (Tc) | 1.7 mOhm @ 30A, 4.5V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 7A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,688 |
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MOSFET (Metal Oxide) | 60V | 7A (Ta), 36A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 800pF @ 25V | ±20V | - | 75W (Tc) | 26 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock15,360 |
|
MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | ±20V | - | 192W (Tc) | 165 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Diotec Semiconductor |
MOSFET DPAK N 60V 50A 0.0085OHM
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 65 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 10 V | 825 pF @ 30 V | ±20V | - | 42W (Tc) | 11mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Microchip Technology |
RH MOSFET 100V U3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 4.48V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 19A, 12V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U3 (SMD-0.5)
- Package / Case: 3-SMD, No Lead
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 12V | 4.48V @ 1mA | 34 nC @ 12 V | 2165 pF @ 25 V | ±20V | - | 75W (Tc) | 38mOhm @ 19A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | U3 (SMD-0.5) | 3-SMD, No Lead |
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Diodes Incorporated |
MOSFET N-CH 20V 3.1A SOT323
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Stock205,551 |
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MOSFET (Metal Oxide) | 20 V | 3.1A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 5.4 nC @ 4.5 V | 400 pF @ 10 V | ±12V | - | 700mW (Ta) | 56mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Vishay Siliconix |
LOGIC MOSFET N-CHANNEL 200V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,580 |
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MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 4V, 10V | 2V @ 250µA | 16 nC @ 5 V | 360 pF @ 25 V | ±10V | - | 3.1W (Ta), 50W (Tc) | 800mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 2.8A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 28.4W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 650 V | 2.8A (Tc) | 10V | 4.5V @ 100µA | 10 nC @ 10 V | 262 pF @ 100 V | ±20V | - | 28.4W (Tc) | 1.4Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 11A PWRFLAT HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 308mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (8x8) HV
- Package / Case: 8-PowerVDFN
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 4.75V @ 250µA | 16.8 nC @ 10 V | 650 pF @ 100 V | ±25V | - | 90W (Tc) | 308mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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Renesas |
HAT1069C0S - P-CHANNEL POWER MOS
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Infineon Technologies |
MOSFET N-CH 600V 26A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock8,850 |
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MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 4V @ 410µA | 36 nC @ 10 V | 1544 pF @ 400 V | ±20V | - | 95W (Tc) | 120mOhm @ 8.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 27A/100A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 79W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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Package: - |
Stock45,510 |
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MOSFET (Metal Oxide) | 40 V | 27A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 28 nC @ 10 V | 1900 pF @ 20 V | ±20V | - | 3W (Ta), 79W (Tc) | 2.2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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onsemi |
T8 80V U8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
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MOSFET (Metal Oxide) | 80 V | 4.7A (Ta), 12A (Tc) | 6V, 10V | 4V @ 15µA | 4.7 nC @ 10 V | 220 pF @ 40 V | ±20V | - | 2.9W (Ta), 18W (Tc) | 55mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 8A TO262F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 23W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262F
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
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Package: - |
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MOSFET (Metal Oxide) | 600 V | 8A (Tj) | 10V | 3.5V @ 250µA | 11.5 nC @ 10 V | 608 pF @ 100 V | ±20V | - | 23W (Tc) | 600mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 200MA USM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: USM
- Package / Case: SC-70, SOT-323
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Package: - |
Stock6,321 |
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MOSFET (Metal Oxide) | 30 V | 200mA (Ta) | 3.3V, 10V | 1.8V @ 100µA | - | 22 pF @ 5 V | ±20V | - | 150mW (Ta) | 2.7Ohm @ 100mA, 10V | 150°C | Surface Mount | USM | SC-70, SOT-323 |