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Infineon Technologies |
MOSFET N-CH 100V 20A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 156W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,832 |
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MOSFET (Metal Oxide) | 100V | 20A (Ta), 128A (Tc) | 10V | 3.6V @ 150µA | 54nC @ 10V | 2320pF @ 50V | ±20V | - | 3.9W (Ta), 156W (Tc) | 4.8 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock16,032 |
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MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3V @ 250µA | 41nC @ 5V | 2672pF @ 16V | ±20V | - | 3.1W (Ta), 120W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,160 |
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MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | ±16V | - | 80W (Tc) | 13.5 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
|
Package: TO-226-3, TO-92-3 Long Body |
Stock7,568 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
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IXYS |
MOSFET N-CH ECO-PAC2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ECO-PAC2
- Package / Case: ECO-PAC2
|
Package: ECO-PAC2 |
Stock2,176 |
|
MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Chassis Mount | ECO-PAC2 | ECO-PAC2 |
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NXP |
MOSFET N-CH 60V 73A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2464pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 166W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,432 |
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MOSFET (Metal Oxide) | 60V | 73A (Tc) | 10V | 4V @ 1mA | 54nC @ 10V | 2464pF @ 25V | ±20V | - | 166W (Tc) | 14 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 250V 3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock545,280 |
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MOSFET (Metal Oxide) | 250V | 3A (Tc) | 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | ±30V | - | 2.5W (Ta), 37W (Tc) | 1.75 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 200V 30A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 81 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock390,048 |
|
MOSFET (Metal Oxide) | 200V | 30A (Ta) | 10V | 4V @ 250µA | 100nC @ 10V | 2335pF @ 25V | ±30V | - | 214W (Tc) | 81 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 525V 4.4A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 525V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,240 |
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MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 4.5V @ 50µA | 17nC @ 10V | 545pF @ 100V | ±30V | - | 70W (Tc) | 1.5 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 75V 20A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PolarPak?
- Package / Case: PolarPak?
|
Package: PolarPak? |
Stock4,640 |
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MOSFET (Metal Oxide) | 75V | 20A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 3150pF @ 25V | ±20V | - | 5.2W (Tc) | 7 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PolarPak? | PolarPak? |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,088 |
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MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 15nC @ 10V | 985pF @ 10V | ±20V | - | 27W (Tc) | 29 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 12.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock30,288 |
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MOSFET (Metal Oxide) | 500V | 12.5A (Tc) | 10V | 5V @ 250µA | 60nC @ 10V | 2300pF @ 25V | ±30V | - | 170W (Tc) | 430 mOhm @ 6.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 12A TO220 FULLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock45,420 |
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MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 4V @ 250µA | 58nC @ 10V | 937pF @ 100V | ±30V | - | 33W (Tc) | 380 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N CH 650V 9A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 644pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock13,104 |
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MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 644pF @ 100V | ±25V | - | 25W (Tc) | 480 mOhm @ 4.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 20V 4.4A 1206-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET?
- Package / Case: 8-SMD, Flat Lead
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Package: 8-SMD, Flat Lead |
Stock1,141,428 |
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MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 22nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 45 mOhm @ 4.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET N-CH 30V 7A 8-HUML
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 7A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUML2020L8 (2x2)
- Package / Case: 8-PowerUDFN
|
Package: 8-PowerUDFN |
Stock2,816 |
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MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2V @ 250µA | 8.9nC @ 10V | 410pF @ 15V | ±20V | - | 2W (Ta) | 28.6 mOhm @ 7A, 10V | 150°C (TJ) | Surface Mount | 6-HUML2020L8 (2x2) | 8-PowerUDFN |
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Rohm Semiconductor |
MOSFET N-CH 20V 1A VML1006
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 470 mOhm @ 500mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VML1006
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock288,000 |
|
MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.2V, 4.5V | 1V @ 1mA | - | 40pF @ 10V | ±8V | - | 400mW (Ta) | 470 mOhm @ 500mA, 4.5V | 150°C (TJ) | Surface Mount | VML1006 | SC-101, SOT-883 |
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IXYS |
MOSFET N-CH 500V 16A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,932 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5.5V @ 2.5mA | 43nC @ 10V | 2250pF @ 25V | ±30V | - | 300W (Tc) | 400 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N CH 100V 4.5A DFN 2X2B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-DFN-EP (2x2)
- Package / Case: 6-UDFN Exposed Pad
|
Package: 6-UDFN Exposed Pad |
Stock22,086 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 4.5V, 10V | 2.8V @ 250µA | 12nC @ 10V | 415pF @ 50V | ±20V | - | 2.8W (Ta) | 72 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
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Fairchild/ON Semiconductor |
MOSFET N-CH 20V 6.2A 6-SSOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT?-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock1,192,584 |
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MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | 895pF @ 10V | ±12V | - | 1.6W (Ta) | 24 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
SIC DISCRETE
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Vgs(th) (Max) @ Id: 5.1V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V
- Vgs (Max): +20V, -7V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Package: - |
Stock2,835 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 8.1A (Tc) | 15V, 18V | 5.1V @ 900µA | 7.9 nC @ 18 V | 290 pF @ 800 V | +20V, -7V | - | 80W (Tc) | 233.9mOhm @ 3A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
MOSFET N-CH 600V 12A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 5V @ 250µA | 20 nC @ 10 V | 800 pF @ 100 V | ±25V | - | 25W (Tc) | 295mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Micro Commercial Co |
MOSFET P-CH 30V 4.1A SOT23-6L
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350mW
- Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6L
- Package / Case: SOT-23-6
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Package: - |
Stock8,802 |
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MOSFET (Metal Oxide) | 30 V | 4.1A (Tj) | 4.5V, 10V | 3V @ 250µA | - | 700 pF @ 15 V | ±20V | - | 350mW | 60mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6L | SOT-23-6 |
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Renesas Electronics Corporation |
HIGH SPEED SWITCHING P CHANNEL ,
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Nexperia USA Inc. |
PXP018-30QL/SOT8002/MLPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 19.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MLPAK33
- Package / Case: 8-PowerVDFN
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Package: - |
Stock8,955 |
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MOSFET (Metal Oxide) | 30 V | 7.5A (Ta), 19.2A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 10.8 nC @ 10 V | 447 pF @ 15 V | ±20V | - | 1.7W (Ta) | 18mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | MLPAK33 | 8-PowerVDFN |
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Wolfspeed, Inc. |
75M 1200V 175C SIC FET
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 1000 V
- Vgs (Max): +15V, -4V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: - |
Stock1,149 |
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SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 3.6V @ 5mA | 53 nC @ 15 V | 1390 pF @ 1000 V | +15V, -4V | - | 136W (Tc) | 90mOhm @ 20A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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STMicroelectronics |
MOSFET N-CH 650V 5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 5A (Tc) | 10V | 3.75V @ 250µA | 6.9 nC @ 10 V | 220 pF @ 100 V | ±25V | - | 60W (Tc) | 990mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 5V @ 250µA | 12 nC @ 10 V | 175 pF @ 100 V | ±30V | - | 69W (Tc) | 3.2Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |