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Infineon Technologies |
MOSFET N-CH 55V 100A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 17270pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock106,104 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 2.2V @ 150µA | 362nC @ 10V | 17270pF @ 25V | ±16V | - | 214W (Tc) | 3.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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|
Infineon Technologies |
MOSFET N-CH 55V 30A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,296 |
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MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | ±16V | - | 3.8W (Ta), 68W (Tc) | 35 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock54,600 |
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MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3270pF @ 25V | ±20V | - | 170W (Tc) | 9.4 mOhm @ 53A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 30V 11A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock357,240 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 21nC @ 4.5V | - | ±20V | - | 1.8W (Ta) | 8.5 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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NXP |
MOSFET N-CH 60V 10.3A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,328 |
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MOSFET (Metal Oxide) | 60V | 10.3A (Tc) | 10V | 4V @ 1mA | 5.8nC @ 10V | 250pF @ 25V | ±20V | - | 33W (Tc) | 150 mOhm @ 5.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 30V 70A I2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
- Vgs (Max): ±18V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,176 |
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MOSFET (Metal Oxide) | 30V | 70A (Tc) | 5V, 10V | 1V @ 250µA | 30nC @ 5V | 1440pF @ 25V | ±18V | - | 100W (Tc) | 9.5 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 250V BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
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Package: Die |
Stock3,472 |
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MOSFET (Metal Oxide) | 250V | 1A (Tj) | 10V | 4V @ 270µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock180,000 |
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MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 80µA | 110nC @ 10V | 1485pF @ 25V | ±20V | - | 136W (Tc) | 14.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,424 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 100V 110A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock4,176 |
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MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 3550pF @ 25V | ±20V | - | 480W (Tc) | 15 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 17.6A POWERDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock2,016 |
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MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 86nC @ 10V | 3690pF @ 10V | ±20V | - | 900mW (Ta) | 4.6 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 16A POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock6,704 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 42nC @ 10V | 2000pF @ 15V | ±20V | - | 900mW (Ta) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-6
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
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Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock20,016 |
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MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 4V @ 250µA | 115nC @ 10V | 7380pF @ 25V | ±20V | - | 300W (Tc) | 1.7 Ohm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D2Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 60V 50A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3779pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock12,312 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | ±16V | - | 143W (Tc) | 6.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7270pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock877,152 |
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MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 124nC @ 10V | 7270pF @ 15V | ±20V | - | 3W (Ta) | 5.5 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor Inc. |
1200V SILICON CARBIDE MOSFET
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
- Vgs (Max): +15V, -5V
- FET Feature: -
- Power Dissipation (Max): 187.5W (Ta)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
|
Package: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 40.3A (Tc) | 15V | 3.5V @ 10mA | 62.3 nC @ 15 V | 1716 pF @ 800 V | +15V, -5V | - | 187.5W (Ta) | 85mOhm @ 10A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Vishay Siliconix |
MOSFET P-CH 60V TO220AB
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
- | - | 119A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Sanyo |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Vishay Siliconix |
MOSFET N-CH 25V 20.1A/40A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 12.5 V
- Vgs (Max): +16V, -12V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
|
Package: - |
Stock17,700 |
|
MOSFET (Metal Oxide) | 25 V | 20.1A (Ta), 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 24 nC @ 10 V | 1090 pF @ 12.5 V | +16V, -12V | - | 3.5W (Ta), 19.2W (Tc) | 5.6mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
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|
Diodes Incorporated |
MOSFET N-CH 60V 10A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.39W (Ta)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 10A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 13.6 nC @ 10 V | 785 pF @ 30 V | ±20V | - | 1.39W (Ta) | 14mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 1.2A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock10,839 |
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MOSFET (Metal Oxide) | 60 V | 1.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 3.2 nC @ 10 V | 166 pF @ 40 V | ±20V | - | 625mW (Ta) | 250mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V TO252 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4497 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 115W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 79A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 104 nC @ 10 V | 4497 pF @ 20 V | ±20V | - | 3.7W (Ta), 115W (Tc) | 11mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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MOSLEADER |
P 20V 3.8A SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V U-DFN2020-
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 4.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 6.5A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 24.9 nC @ 10 V | 1265 pF @ 20 V | ±20V | - | 800mW (Ta) | 34mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-PowerUDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 17.4A/65.3A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Stock49,122 |
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MOSFET (Metal Oxide) | 60 V | 17.4A (Ta), 65.3A (Tc) | 7.5V, 10V | 3.4V @ 250µA | 32 nC @ 10 V | 1490 pF @ 30 V | ±20V | - | 3.7W (Ta), 52W (Tc) | 5.8mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Linear Integrated Systems, Inc. |
HIGH SPEED N-CHANNEL LATERAL DMO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 25V
- Vgs(th) (Max) @ Id: 1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): +30V, -25V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 45Ohm @ 1mA, 10V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-72-4
- Package / Case: TO-206AF, TO-72-4 Metal Can
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Package: - |
Stock1,494 |
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MOSFET (Metal Oxide) | 20 V | 50mA (Ta) | 5V, 25V | 1.5V @ 1µA | - | - | +30V, -25V | - | 300mW (Ta) | 45Ohm @ 1mA, 10V | -55°C ~ 125°C (TJ) | Through Hole | TO-72-4 | TO-206AF, TO-72-4 Metal Can |
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Vishay Siliconix |
MOSFET N-CH 800V 15A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,979 |
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MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 4V @ 250µA | 122 nC @ 10 V | 2408 pF @ 100 V | ±30V | - | 208W (Tc) | 290mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 64mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 30 V | 4.9A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 14 nC @ 10 V | 528 pF @ 15 V | ±20V | - | 2W (Ta) | 64mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |