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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock2,560 |
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MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 230nC @ 10V | 6000pF @ 25V | ±20V | - | 300W (Tc) | 3.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock12,852 |
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MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 1V @ 250µA | 33nC @ 4.5V | 1650pF @ 25V | ±16V | - | 94W (Tc) | 12 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,968 |
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MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 3.5V @ 1mA | 55nC @ 10V | 2550pF @ 100V | ±20V | - | 45W (Tc) | 100 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 7A TO-220FN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FN
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,392 |
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MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 4V @ 1mA | - | 1050pF @ 10V | ±30V | - | 30W (Tc) | 1.2 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,944 |
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MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5V @ 150µA | 117nC @ 10V | 8410pF @ 50V | ±20V | - | 214W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 8TISON
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,624 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock6,224 |
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MOSFET (Metal Oxide) | 100V | 1.2A (Ta) | 4.5V, 10V | 1.8V @ 100µA | 6.7nC @ 10V | 152.7pF @ 25V | ±20V | - | 1.8W (Ta) | 600 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 600V 0.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 26W (Tc)
- Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,904 |
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MOSFET (Metal Oxide) | 600V | 800mA (Ta) | 10V | 4.5V @ 50µA | 4.9nC @ 10V | 92pF @ 25V | ±30V | - | 26W (Tc) | 15 Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 150V 2A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,112 |
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MOSFET (Metal Oxide) | 150V | 2A (Ta), 7.1A (Tc) | 5V, 10V | 3V @ 250µA | 8.7nC @ 10V | 405pF @ 25V | ±20V | - | 1.9W (Ta) | 310 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 200V 44A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock104,724 |
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MOSFET (Metal Oxide) | 200V | 44A (Tc) | 10V | 5.5V @ 250µA | 140nC @ 10V | 3430pF @ 25V | ±30V | - | 2.4W (Ta), 330W (Tc) | 55 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 195A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 258nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 15570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 258nC @ 4.5V | 15570pF @ 25V | ±20V | - | 375W (Tc) | 1.9 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 9.2A TO220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
- Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock102,000 |
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MOSFET (Metal Oxide) | 60V | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 3V @ 250µA | 115nC @ 10V | 3500pF @ 25V | ±20V | - | 3.1W (Ta), 104.2W (Tc) | 19.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 250V 13A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock390,000 |
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MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 680pF @ 25V | ±20V | - | 100W (Tc) | 235 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 400V 1.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 220mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock65,592 |
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MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 2V @ 250µA | 5.5nC @ 10V | 121pF @ 25V | ±20V | - | 39W (Tc) | 5.5 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock182,424 |
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MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 3V @ 250µA | 50nC @ 4.5V | 5600pF @ 15V | ±20V | - | 5.4W (Ta) | 3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Micro Commercial Co |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Tj)
- Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 2V @ 250µA | 8.8 nC @ 10 V | 400 pF @ 30 V | ±20V | - | 1.2W (Tj) | 80mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 40V 205A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W
- Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Stock90 |
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MOSFET (Metal Oxide) | 40 V | 205A (Tc) | 10V | 4V @ 250µA | 75.6 nC @ 10 V | 6865 pF @ 20 V | ±20V | - | 156W | 3mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 4A LPTS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 7V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,979 |
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MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 15V | 7V @ 450µA | 10.5 nC @ 15 V | 260 pF @ 100 V | ±30V | - | 60W (Tc) | 1.43Ohm @ 2A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 30V 45A TO220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 73.5W (Tc)
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 90 nC @ 10 V | 2700 pF @ 15 V | ±20V | - | 73.5W (Tc) | 8.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
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Package: - |
Stock14,370 |
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MOSFET (Metal Oxide) | 40 V | 10A (Ta), 42A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 10 nC @ 4.5 V | 1040 pF @ 20 V | ±20V | - | 2.4W (Ta), 42W (Tc) | 11mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
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YAGEO XSEMI |
MOSFET N-CH 45V 49A 223A PMPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 223A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75.2 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PMPAK® 5 x 6
- Package / Case: 8-PowerLDFN
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 45 V | 49A (Ta), 223A (Tc) | 4.5V, 10V | 3V @ 250µA | 75.2 nC @ 4.5 V | 7200 pF @ 20 V | ±20V | - | 5W (Ta), 104W (Tc) | 1.4mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PMPAK® 5 x 6 | 8-PowerLDFN |
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International Rectifier |
N-CHANNEL HERMETIC MOS HEXFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 50W
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-204AA (TO-3)
- Package / Case: TO-204AA, TO-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1000 V | 1.3A | - | - | - | - | - | - | 50W | - | - | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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Nexperia USA Inc. |
MOSFET P-CH 20V 3.5A TO236AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 11 nC @ 4.5 V | 1000 pF @ 10 V | ±12V | - | 510mW (Ta), 4.15W (Tc) | 55mOhm @ 2.4A, 4.5V | 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 1.53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 19W (Tc)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 770mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK
- Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 1.53A (Tc) | 10V | 4V @ 250µA | 11 nC @ 10 V | 295 pF @ 25 V | ±30V | - | 2.5W (Ta), 19W (Tc) | 4Ohm @ 770mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
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Renesas |
2SK2498 - SWITCHING N-CHANNEL PO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 35W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 50A (Ta) | 4V, 10V | 2V @ 1mA | 152 nC @ 10 V | 3400 pF @ 10 V | ±20V | - | 2W (Ta), 35W (Tc) | 9mOhm @ 25A, 10V | 150°C | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
TRENCH PG-TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 201A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 249µA
- Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-U05
- Package / Case: TO-220-3
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Package: - |
Stock2,331 |
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MOSFET (Metal Oxide) | 40 V | 44A (Ta), 201A (Tc) | 6V, 10V | 3.4V @ 249µA | 315 nC @ 10 V | 15000 pF @ 20 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.15mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 770µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock108 |
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MOSFET (Metal Oxide) | 600 V | 7.5A (Ta) | 10V | 4V @ 770µA | 24 nC @ 10 V | 890 pF @ 300 V | ±30V | - | 40W (Tc) | 1Ohm @ 3.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Renesas |
2SK4092-S35-A - SWITCHING N-CHAN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 10A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P (MP-88)
- Package / Case: TO-3P-3, SC-65-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 3.5V @ 1mA | 50 nC @ 10 V | 3240 pF @ 10 V | ±30V | - | 3W (Ta), 200W (Tc) | 400mOhm @ 10A, 10V | 150°C | Through Hole | TO-3P (MP-88) | TO-3P-3, SC-65-3 |