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Infineon Technologies |
MOSFET N-CH 150V DIE ON WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock4,000 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock4,176 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | ±20V | - | 167W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,560 |
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MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 250µA | 135nC @ 10V | 7500pF @ 25V | ±20V | - | 1.2W (Ta), 105W (Tc) | 4 mOhm @ 45A, 10V | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 9.5A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1588pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock7,608 |
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MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 64A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 18nC @ 4.5V | 1588pF @ 12V | ±20V | - | 870mW (Ta), 41.7W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Fairchild/ON Semiconductor |
MOSFET N-CH 200V 17.5A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 8.75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock17,688 |
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MOSFET (Metal Oxide) | 200V | 17.5A (Tc) | 10V | 5V @ 250µA | 78nC @ 10V | 3100pF @ 25V | ±30V | - | 55W (Tc) | 75 mOhm @ 8.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 30V 2.34A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 730mW (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock120,408 |
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MOSFET (Metal Oxide) | 30V | 2.34A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | ±20V | Schottky Diode (Isolated) | 730mW (Ta) | 85 mOhm @ 3.05A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI3333
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 6V
- Vgs (Max): -6V
- FET Feature: -
- Power Dissipation (Max): 2.16W
- Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 12A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock5,120 |
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MOSFET (Metal Oxide) | 12V | 19A (Tc) | 2.5V, 4.5V | 1.2V @ 250µA | 9.5nC @ 6V | 913pF @ 6V | -6V | - | 2.16W | 11.7 mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 12V 9A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,928 |
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MOSFET (Metal Oxide) | 12V | 9A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 18nC @ 4.5V | 1370pF @ 6V | ±8V | - | 2.5W (Ta) | 19 mOhm @ 9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 20V 0.76A SC75
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V
- Vgs (Max): ±6V
- FET Feature: -
- Power Dissipation (Max): 301mW (Tj)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-75, SOT-416
- Package / Case: SC-75, SOT-416
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Package: SC-75, SOT-416 |
Stock3,984 |
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MOSFET (Metal Oxide) | 20V | 760mA (Tj) | 1.8V, 4.5V | 1.2V @ 250µA | 2.1nC @ 4.5V | 156pF @ 5V | ±6V | - | 301mW (Tj) | 360 mOhm @ 350mA, 4.5V | - | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
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Vishay Siliconix |
MOSFET N-CH 40V 25A CHIPFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 20V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 7.75 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? ChipFet Single
- Package / Case: PowerPAK? ChipFET? Single
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Package: PowerPAK? ChipFET? Single |
Stock6,112 |
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MOSFET (Metal Oxide) | 40V | 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 20nC @ 4.5V | 1765pF @ 20V | +20V, -16V | - | 31W (Tc) | 7.75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
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Diodes Incorporated |
MOSFET N-CH 100V 500MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock549,540 |
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MOSFET (Metal Oxide) | 100V | 500mA (Ta) | 10V | 2.4V @ 1mA | - | 75pF @ 25V | ±20V | - | 2W (Ta) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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STMicroelectronics |
MOSFET N-CH 60V 100A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (3.3x3.3)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock3,824 |
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MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 1600pF @ 25V | ±20V | - | 3W (Ta), 78W (Tc) | 5.4 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7150pF @ 20V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock25,950 |
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MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 150nC @ 10V | 7150pF @ 20V | +20V, -16V | - | 48W (Tc) | 1.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta)
- Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,432 |
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MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Nexperia USA Inc. |
MOSFET N-CH 40V 30A LFPAK33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 801 pF @ 25 V
- Vgs (Max): +20V, -10V
- FET Feature: -
- Power Dissipation (Max): 44W (Ta)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Package: - |
Stock8,862 |
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MOSFET (Metal Oxide) | 40 V | 30A (Ta) | 10V | 3.6V @ 1mA | 12.7 nC @ 10 V | 801 pF @ 25 V | +20V, -10V | - | 44W (Ta) | 15mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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Diodes Incorporated |
MOSFET BVDSS: 101V~250V SOT23 T&
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 65mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 80Ohm @ 30mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 65mA (Ta) | 10V | 3.5V @ 1mA | 1.2 nC @ 10 V | 25 pF @ 100 V | ±20V | - | 500mW (Ta) | 80Ohm @ 30mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 40V 22A/87A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 22A (Ta), 87A (Tc) | 4.5V, 10V | 2V @ 50µA | 18 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 3.6W (Ta), 55W (Tc) | 3.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Microchip Technology |
MOSFET N-CH 100V 75A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
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Package: - |
Stock39 |
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MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 4V @ 1mA | 300 nC @ 10 V | 6120 pF @ 25 V | - | - | - | 19mOhm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1000V 5A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 1000 V | 5A (Tc) | 10V | 6V @ 250µA | 33.4 nC @ 10 V | 1830 pF @ 25 V | ±30V | - | 250W (Tc) | 2.8Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET N-CH 30V 10.6A/30A PWRDI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 10.6A (Ta), 30A | 4.5V, 10V | 1.8V @ 250µA | 7.4 nC @ 10 V | 894 pF @ 15 V | ±12V | - | 1.2W (Ta), 2.6W (Tc) | 11mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
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Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 15.8A (Ta), 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 107 nC @ 10 V | 6067 pF @ 25 V | ±20V | - | 2W (Ta), 104W (Tc) | 4.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH >=100V PG-TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 179A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 109µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 208W (Tc)
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock13,302 |
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MOSFET (Metal Oxide) | 100 V | 21A (Ta), 179A (Tc) | 8V, 10V | 3.3V @ 109µA | 69 nC @ 10 V | 5200 pF @ 50 V | ±20V | - | 3W (Ta), 208W (Tc) | 3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 293A D2PAK-7P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 240A (Tc) | - | 4V @ 250µA | 300 nC @ 10 V | 8850 pF @ 50 V | - | - | 375W (Tc) | 2.1mOhm @ 168A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D2PAK (6 Leads + Tab) |
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onsemi |
NTMFS4935NT1G-IRH1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 930mW (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 49.4 nC @ 10 V | 4850 pF @ 15 V | ±20V | - | 930mW (Ta), 48W (Tc) | 3.2mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Rohm Semiconductor |
PCH -100V -2.5A POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HUML2020L8
- Package / Case: 8-PowerUDFN
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Package: - |
Stock8,703 |
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MOSFET (Metal Oxide) | 100 V | 2.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 19.7 nC @ 10 V | 590 pF @ 50 V | ±20V | - | 2W (Ta) | 260mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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Infineon Technologies |
MOSFET N-CH 75V 90A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: - |
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MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4V @ 250µA | 220 nC @ 10 V | 9400 pF @ 50 V | ±20V | - | 340W (Tc) | 3.3mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |