|
|
Infineon Technologies |
MOSFET N-CH 60V 13A WDSON-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 38W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
|
Package: 3-WDSON |
Stock5,840 |
|
MOSFET (Metal Oxide) | 60V | 13A (Ta), 56A (Tc) | 10V | 4V @ 33µA | 46nC @ 10V | 3700pF @ 30V | ±20V | - | 2.2W (Ta), 38W (Tc) | 7.7 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
|
|
Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock33,000 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 1V @ 250µA | 17nC @ 5V | - | ±12V | - | 2.5W (Ta) | 25 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
Infineon Technologies |
MOSFET N-CH 30V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5203pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 55A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock4,544 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5203pF @ 15V | ±20V | - | 107W (Tc) | 3.8 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
Infineon Technologies |
MOSFET N-CH 30V 100A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock9,900 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7020pF @ 25V | ±20V | - | 300W (Tc) | 3.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock112,080 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4.5V @ 250µA | 19nC @ 10V | 620pF @ 25V | ±30V | - | 104W (Tc) | 1.5 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
NXP |
MOSFET N-CH 40V 75A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 105W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock6,576 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 36.3nC @ 10V | 2040pF @ 25V | ±20V | - | 105W (Tc) | 8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 90A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 191nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock498,636 |
|
MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 4V @ 250µA | 191nC @ 10V | 6150pF @ 25V | ±30V | - | 250W (Tc) | 10 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,384 |
|
MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1300pF @ 25V | ±20V | - | 125W (Tc) | 3 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 200V 4.6A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 59.9 mOhm @ 5.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MZ
- Package / Case: DirectFET? Isometric MZ
|
Package: DirectFET? Isometric MZ |
Stock17,760 |
|
MOSFET (Metal Oxide) | 200V | 4.6A (Ta), 26A (Tc) | 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 59.9 mOhm @ 5.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MZ | DirectFET? Isometric MZ |
|
|
Microsemi Corporation |
MOSFET N-CH 1000V 145A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 145A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3250W (Tc)
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: Module
|
Package: Module |
Stock2,688 |
|
MOSFET (Metal Oxide) | 1000V | 145A | 10V | 5V @ 20mA | 1068nC @ 10V | 28500pF @ 25V | ±30V | - | 3250W (Tc) | 78 mOhm @ 72.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | Module |
|
|
EPC |
TRANS GAN 40V 31A BUMPED DIE
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
- Vgs (Max): +6V, -4V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 5V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
Package: Die |
Stock6,672 |
|
GaNFET (Gallium Nitride) | 40V | 31A (Ta) | 5V | 2.5V @ 16mA | 18nC @ 5V | 1900pF @ 20V | +6V, -4V | - | - | 2.4 mOhm @ 30A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
|
|
ON Semiconductor |
MOSFET P-CH 60V 14A 8WDFN
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
|
Package: 8-PowerWDFN |
Stock2,096 |
|
MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | 1258pF @ 25V | ±20V | - | 3.2W (Ta), 21W (Tc) | 52 mOhm @ 7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
Microsemi Corporation |
MOSFET N-CH 600V 40A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7015pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
|
Package: SOT-227-4, miniBLOC |
Stock7,120 |
|
MOSFET (Metal Oxide) | 600V | 40A | 10V | 3.9V @ 1mA | 259nC @ 10V | 7015pF @ 25V | ±20V | - | 290W (Tc) | 70 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
STMicroelectronics |
MOSFET N-CH 30V 6.5A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock1,330,308 |
|
MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 5V, 10V | 1V @ 250µA | 9nC @ 10V | 330pF @ 25V | ±16V | - | 3.3W (Tc) | 50 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Sanken |
MOSFET N-CH 75V 6A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
- Rds On (Max) @ Id, Vgs: 23.2 mOhm @ 12.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock6,368 |
|
MOSFET (Metal Oxide) | 75V | 6A (Ta) | 4.5V, 10V | 2.5V @ 350µA | 24nC @ 10V | 1580pF @ 25V | ±20V | - | 3.1W (Ta), 46W (Tc) | 23.2 mOhm @ 12.4A, 10V | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
|
|
IXYS |
MOSFET P-CH 50V 32A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock17,364 |
|
MOSFET (Metal Oxide) | 50V | 32A (Tc) | 10V | 4.5V @ 250µA | 46nC @ 10V | 1975pF @ 25V | ±15V | - | 83W (Tc) | 39 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 40V 31A PWRDI5060-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4305pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock6,848 |
|
MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 10V | 4V @ 250µA | 68.6nC @ 10V | 4305pF @ 25V | ±20V | - | 3.6W (Ta), 167W (Tc) | 2.7 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Vgs (Max): 20V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock440,604 |
|
MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 7.4nC @ 5V | 290pF @ 10V | 20V | - | 1.25W (Ta) | 62 mOhm @ 3.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
|
|
Rohm Semiconductor |
MOSFET P-CH 20V 2.4A TSST8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Vgs (Max): ±10V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSST
- Package / Case: 8-SMD, Flat Lead
|
Package: 8-SMD, Flat Lead |
Stock33,960 |
|
MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | 850pF @ 10V | ±10V | Schottky Diode (Isolated) | 1.25W (Ta) | 105 mOhm @ 2.4A, 4.5V | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
|
|
Nexperia USA Inc. |
MOSFET N-CH 12V 6WLCSP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WLCSP (1.48x.98)
- Package / Case: 6-XFBGA, WLCSP
|
Package: 6-XFBGA, WLCSP |
Stock34,302 |
|
MOSFET (Metal Oxide) | 12V | 7.3A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 24nC @ 4.5V | 920pF @ 6V | ±8V | - | 556mW (Ta), 12.5W (Tc) | 18 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.48x.98) | 6-XFBGA, WLCSP |
|
|
Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9830pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 380W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Stock18,540 |
|
MOSFET (Metal Oxide) | 100V | 190A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | ±20V | - | 380W (Tc) | 4 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
|
|
Infineon Technologies |
TRENCH <= 40V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8-902
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: - |
Stock10,005 |
|
MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 14 nC @ 4.5 V | 1010 pF @ 15 V | ±20V | - | 2.5W (Ta) | 9.1mOhm @ 13A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | PG-DSO-8-902 | 8-SOIC (0.154", 3.90mm Width) |
|
|
Nexperia USA Inc. |
PMCB60XNE/SOT8026/DSN1006-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta), 7W (Tc)
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DSN1006-3
- Package / Case: 3-XFDFN
|
Package: - |
Stock29,634 |
|
MOSFET (Metal Oxide) | 30 V | 3.5A (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 7.5 nC @ 4.5 V | 420 pF @ 15 V | ±12V | - | 480mW (Ta), 7W (Tc) | 55mOhm @ 3.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DSN1006-3 | 3-XFDFN |
|
|
Central Semiconductor Corp |
MOSFET P-CH 30V 450MA SOT883
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
- Vgs (Max): 8V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 450mA (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 0.88 nC @ 4.5 V | 55 pF @ 25 V | 8V | - | 100mW (Ta) | 1.1Ohm @ 430mA, 4.5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
|
|
Vishay Siliconix |
N-CHANNEL 30-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.1A (Ta), 3.6A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 10 nC @ 10 V | 320 pF @ 15 V | ±12V | - | 1.1W (Ta), 1.7W (Tc) | 68mOhm @ 2.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
Fairchild Semiconductor |
MOSFET N-CH 650V 54A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 5.4mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7109 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 481W (Tc)
- Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 5V @ 5.4mA | 164 nC @ 10 V | 7109 pF @ 100 V | ±20V | - | 481W (Tc) | 77mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
Diodes Incorporated |
MOSFET N-CH 120V 90A PWRDI5060-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.9W
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
|
Package: - |
Stock14,646 |
|
MOSFET (Metal Oxide) | 120 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 49 nC @ 10 V | 3224 pF @ 60 V | ±20V | - | 2.9W | 7.8mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
Infineon Technologies |
AUTOMOTIVE_COOLMOS PG-TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 420µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 4.5V @ 420µA | 36 nC @ 10 V | 1694 pF @ 400 V | ±20V | - | 98W (Tc) | 145mOhm @ 8.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |