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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock8,592 |
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MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | - | 88W (Tc) | 8.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 1500V 2A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMP-FD
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,648 |
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MOSFET (Metal Oxide) | 1500V | 2A (Ta) | 10V | 3.5V @ 1mA | 37.5nC @ 10V | 380pF @ 30V | ±20V | - | 80W (Tc) | 13 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | SMP-FD | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 26A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,088 |
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MOSFET (Metal Oxide) | 100V | 26A (Ta) | 4V, 10V | 2.6V @ 1mA | 42nC @ 10V | 2150pF @ 20V | ±20V | - | 1.75W (Ta), 45W (Tc) | 60 mOhm @ 13A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 50A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock36,000 |
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MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 155nC @ 10V | 6900pF @ 20V | ±20V | - | 5.4W (Ta), 83W (Tc) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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ON Semiconductor |
MOSFET N-CH 40V 76A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock274,776 |
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MOSFET (Metal Oxide) | 40V | 76A (Tc) | 5V, 10V | 3.5V @ 250µA | 51nC @ 10V | 3220pF @ 25V | ±20V | - | 83W (Tc) | 7.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 50V 130MA SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock871,836 |
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MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 2V @ 1mA | - | 45pF @ 25V | ±20V | - | 300mW (Ta) | 10 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 20V 4.1A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 20V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
|
Package: SC-74, SOT-457 |
Stock3,968 |
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MOSFET (Metal Oxide) | 20V | 4.1A (Tc) | 4.5V, 10V | 2V @ 1mA | 13.1nC @ 10V | 500pF @ 20V | ±15V | - | 1.75W (Tc) | 65 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Microsemi Corporation |
MOSFET N-CH 100V 278A SP4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 278A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP4
- Package / Case: SP4
|
Package: SP4 |
Stock5,872 |
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MOSFET (Metal Oxide) | 100V | 278A | 10V | 4V @ 5mA | 700nC @ 10V | 20000pF @ 25V | ±30V | - | 780W (Tc) | 5 mOhm @ 125A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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ON Semiconductor |
MOSFET N-CH 16V SC28
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,088 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 250V 0.6A SOT89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 300mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89/PCP-1
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock5,136 |
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MOSFET (Metal Oxide) | 250V | 600mA (Ta) | 2.5V, 4.5V | 1.3V @ 1mA | 2.1nC @ 4.5V | 140pF @ 20V | ±10V | - | 3.5W (Tc) | 6.5 Ohm @ 300mA, 4.5V | 150°C (TJ) | Surface Mount | SOT-89/PCP-1 | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 60V 18A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock793,932 |
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MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 690pF @ 25V | ±20V | - | 25W (Tc) | 40 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Nexperia USA Inc. |
MOSFET N-CH 100V 9.3A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Package: SOT-1210, 8-LFPAK33 (5-Lead) |
Stock3,472 |
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MOSFET (Metal Oxide) | 100V | 9.3A (Tc) | 5V | 2.1V @ 1mA | 7.4nC @ 5V | 695pF @ 25V | ±10V | - | 36W (Tc) | 150 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP.,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 614pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock15,336 |
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MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5V @ 250µA | 16.5nC @ 10V | 614pF @ 100V | ±25V | - | 25W (Tc) | 420 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 30V 27A PWRFLAT56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock155,124 |
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MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 1.2V @ 1mA (Min) | 13.7nC @ 4.5V | 2110pF @ 25V | ±20V | - | 62.5W (Tc) | 3.9 mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
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Fairchild/ON Semiconductor |
MOSFET P-CH 20V 1.2A SC70-6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock1,551,588 |
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MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 330pF @ 10V | ±8V | - | 750mW (Ta) | 180 mOhm @ 1.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Nexperia USA Inc. |
MOSFET N-CH 80V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9961pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 338W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock37,044 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 1mA | 139nC @ 10V | 9961pF @ 40V | ±20V | - | 338W (Tc) | 3.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 10.2A SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2516pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock286,836 |
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MOSFET (Metal Oxide) | 30V | 10.2A (Ta), 70A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 2516pF @ 15V | ±20V | - | 920mW (Ta), 43W (Tc) | 4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 105A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 176W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock13,728 |
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MOSFET (Metal Oxide) | 40V | 20A (Ta), 105A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 72nC @ 10V | 4300pF @ 20V | ±20V | - | 1.9W (Ta), 176W (Tc) | 2.9 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Central Semiconductor Corp |
MOSFET P-CH 30V 2.4A DIE
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
- Vgs (Max): 12V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 2.4A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 9.6 nC @ 5 V | 800 pF @ 10 V | 12V | - | - | 91mOhm @ 1.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 10A, 950V,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1568 pF @ 50 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 34W (Tj)
- Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 950 V | 10A (Tj) | 10V | 3.9V @ 250µA | 24 nC @ 10 V | 1568 pF @ 50 V | ±30V | - | 34W (Tj) | 500mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | - | 2.5V @ 250µA | 25 nC @ 10 V | 860 pF @ 10 V | - | - | - | 60mOhm @ 5.3A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Motorola |
TRANS MOSFET N-CH 400V 16A 3-PIN
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Micro Commercial Co |
N-CHANNEL MOSFET DFN1006-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 750mA
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 900mW
- Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: SC-101, SOT-883
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Package: - |
Stock28,896 |
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MOSFET (Metal Oxide) | 20 V | 750mA | 1.8V, 4.5V | 1.1V @ 250µA | 0.8 nC @ 4.5 V | 33 pF @ 16 V | ±12V | - | 900mW | 300mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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onsemi |
MOSFET N-CH 60V 400MA TO92-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Package: - |
Stock27,216 |
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MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | ±20V | - | 625mW (Ta) | 2Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SC-62
- Package / Case: TO-243AA
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 4V, 10V | 3V @ 1mA | - | 220 pF @ 10 V | ±20V | - | 2W (Ta) | 2Ohm @ 500mA, 10V | 150°C | Surface Mount | SC-62 | TO-243AA |
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Renesas Electronics Corporation |
DISCRETE / POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Nexperia USA Inc. |
MOSFET N-CH 60V 1.8A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta), 5.4W (Tc)
- Rds On (Max) @ Id, Vgs: 222mOhm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: - |
Stock26,964 |
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MOSFET (Metal Oxide) | 60 V | 1.8A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 3.8 nC @ 10 V | 110 pF @ 30 V | ±20V | - | 625mW (Ta), 5.4W (Tc) | 222mOhm @ 1.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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onsemi |
MOSFET N-CH 30V 6.3A SUPERSOT6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 13 nC @ 10 V | 620 pF @ 15 V | ±20V | - | 800mW (Tc) | 25mOhm @ 6.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |