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NXP |
MOSFET N-CH 55V 100A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 204W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,232 |
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MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 124nC @ 10V | 7750pF @ 25V | ±16V | - | 204W (Tc) | 5.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 100V 6.6A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,400 |
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MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | ±30V | - | 2.5W (Ta), 44W (Tc) | 530 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 35A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 17.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock103,464 |
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MOSFET (Metal Oxide) | 400V | 35A (Tc) | 10V | 5V @ 250µA | 140nC @ 10V | 5600pF @ 25V | ±30V | - | 310W (Tc) | 105 mOhm @ 17.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 100V 38A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 145W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,576 |
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MOSFET (Metal Oxide) | 100V | 39A (Tc) | 4.5V, 10V | 3V @ 250µA | 67nC @ 10V | 1820pF @ 25V | ±16V | - | 145W (Tc) | 35 mOhm @ 39A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V SAWN BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
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Package: Die |
Stock5,440 |
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MOSFET (Metal Oxide) | 30V | 1A (Tj) | 10V | 2.2V @ 250µA | - | - | - | - | - | 50 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
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GeneSiC Semiconductor |
TRANS SJT 650V 8A TO276
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (158°C)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 35V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A
- Operating Temperature: -55°C ~ 225°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-276
- Package / Case: TO-276AA
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Package: TO-276AA |
Stock5,328 |
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SiC (Silicon Carbide Junction Transistor) | 650V | 8A (Tc) (158°C) | - | - | - | 720pF @ 35V | - | - | 200W (Tc) | 170 mOhm @ 8A | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
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STMicroelectronics |
IC POWER MOSFET 1200V HIP247
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,776 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET P-CH 30V 24A 8HWSON
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 24A, 5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,104 |
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MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | - | 74nC @ 10V | 2800pF @ 10V | ±20V | - | 1.5W (Ta) | 7.8 mOhm @ 24A, 5V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 75V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.8V @ 91µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 37.5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock2,016 |
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MOSFET (Metal Oxide) | 75V | 19A (Ta), 100A (Tc) | 10V | 3.8V @ 91µA | 69nC @ 10V | 4800pF @ 37.5V | ±20V | - | 2.5W (Ta), 125W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Nexperia USA Inc. |
MOSFET P-CH 12V 6WLCSP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 556mW (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WLCSP (1.48x.98)
- Package / Case: 6-XFBGA, WLCSP
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Package: 6-XFBGA, WLCSP |
Stock5,744 |
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MOSFET (Metal Oxide) | 12V | 6.2A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 29.4nC @ 4.5V | 1400pF @ 6V | ±8V | - | 556mW (Ta), 12.5W (Tc) | 25 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.48x.98) | 6-XFBGA, WLCSP |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 10A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (8x8)
- Package / Case: 4-VSFN Exposed Pad
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Package: 4-VSFN Exposed Pad |
Stock6,816 |
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MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | ±30V | Super Junction | 156W (Tc) | 170 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CHAN 20V SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.4A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock56,562 |
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MOSFET (Metal Oxide) | 20V | 3.2A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 5.5nC @ 4.5V | 330pF @ 10V | ±12V | - | 2W (Tc) | 115 mOhm @ 2.4A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 1700V 2.5A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1700V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 55W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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Package: TO-3P-3 Full Pack |
Stock6,516 |
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MOSFET (Metal Oxide) | 1700V | 2.5A (Tc) | 10V | - | 48nC @ 10V | 850pF @ 30V | ±30V | - | 3W (Ta), 55W (Tc) | 10.5 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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IXYS |
40V/660A TRENCHT4 PWR MOSFET SOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 860nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Current Sensing
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock7,944 |
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MOSFET (Metal Oxide) | 40V | 660A (Tc) | 10V | 4V @ 250µA | 860nC @ 10V | 44000pF @ 25V | ±15V | Current Sensing | 1040W (Tc) | 0.85 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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ON Semiconductor |
MOSFET P-CH 60V 1.7A SOT-223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 185 mOhm @ 2.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock2,449,680 |
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MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 10V | 4V @ 1mA | 14.3nC @ 10V | 492pF @ 25V | ±20V | - | 1W (Ta) | 185 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Panjit International Inc. |
20V N-CHANNEL ENHANCEMENT MODE M
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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Package: - |
Stock7,884 |
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MOSFET (Metal Oxide) | 20 V | 500mA (Ta) | 1.2V, 4.5V | 900mV @ 250µA | 1.4 nC @ 4.5 V | 67 pF @ 10 V | ±10V | - | 350mW (Ta) | 400mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Nexperia USA Inc. |
MOSFET N-CH 40V 200A LFPAK56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.05V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7966 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 194W (Ta)
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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Package: - |
Stock25,845 |
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MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 4.5V, 10V | 2.05V @ 1mA | 109 nC @ 10 V | 7966 pF @ 20 V | ±20V | Schottky Diode (Body) | 194W (Ta) | 1.8mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 25V 39A/58A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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Package: - |
Stock75,060 |
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MOSFET (Metal Oxide) | 25 V | 39A (Ta), 58A (Tc) | 4.5V, 10V | 2V @ 250µA | 10.4 nC @ 10 V | 760 pF @ 12 V | ±20V | - | 2.5W (Ta), 28W (Tc) | 5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 4V @ 250µA | 86 nC @ 10 V | 1920 pF @ 100 V | - | - | - | 180mOhm @ 11A, 10V | - | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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onsemi |
MOSFET N-CH 150V 15A/121A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 121A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 379µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4745 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 238W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 69A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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Package: - |
Stock3,141 |
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MOSFET (Metal Oxide) | 150 V | 15A (Ta), 121A (Tc) | 8V, 10V | 4.5V @ 379µA | 57 nC @ 10 V | 4745 pF @ 75 V | ±20V | - | 3.7W (Ta), 238W (Tc) | 7mOhm @ 69A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
TRENCH >=100V DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
MOSFET N-CH 500V 51A ISOTOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: ISOTOP®
- Package / Case: SOT-227-4, miniBLOC
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 51A (Tc) | - | 5V @ 2.5mA | 125 nC @ 10 V | 5590 pF @ 25 V | - | - | - | 75mOhm @ 25.5A, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Infineon Technologies |
MOSFET N-CH 650V 69A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: - |
Stock585 |
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MOSFET (Metal Oxide) | 650 V | 69A (Tc) | - | 4.5V @ 1.79mA | 145 nC @ 10 V | 7149 pF @ 400 V | ±20V | - | 305W (Tc) | 29mOhm @ 35.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 800V 15A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 15A (Tc) | 10V | 4V @ 250µA | 122 nC @ 10 V | 2408 pF @ 100 V | ±30V | - | 208W (Tc) | 290mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
E SERIES POWER MOSFET TO-220AB,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock3,024 |
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MOSFET (Metal Oxide) | 800 V | 4.4A (Tc) | 10V | 4V @ 250µA | 16.5 nC @ 10 V | 321 pF @ 100 V | ±30V | - | 62.5W (Tc) | 1.35Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock17,910 |
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MOSFET (Metal Oxide) | 100 V | 18.8A (Ta), 81A (Tc) | 7.5V, 10V | 4V @ 250µA | 70 nC @ 10 V | 3250 pF @ 50 V | ±20V | - | 5.4W (Ta), 100W (Tc) | 6.1mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Micro Commercial Co |
MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.25W
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 12 nC @ 10 V | 888 pF @ 10 V | ±10V | - | 1.25W | 28mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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UMW |
TO-252 MOSFETS ROHS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock360 |
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MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25 nC @ 10 V | 1562 pF @ 25 V | ±20V | - | 55W (Tc) | 35mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |