Page 1280 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP10N10L
Infineon Technologies

MOSFET N-CH 100V 10.3A TO-220

Package: TO-220-3

Stock60,000
IRFR9024NTRL
Infineon Technologies

MOSFET P-CH 55V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock8,844
NTLUS3A39PZCTAG
ON Semiconductor

MOSFET P-CH 20V 5.2A UDFN6

Package: 6-PowerUFDFN

Stock7,664
GP2M004A060FG
Global Power Technologies Group

MOSFET N-CH 600V 4A TO220F

Package: TO-220-3 Full Pack

Stock3,552
UPA2735GR-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 16A 8SOP

Package: 8-PowerSOIC (0.173", 4.40mm Width)

Stock2,000
RJL5020DPK-00#T0
Renesas Electronics America

MOSFET N-CH 500V 38A TO3P

Package: TO-3P-3, SC-65-3

Stock2,880
2N7002MTF
Fairchild/ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock673,524
SI5441DC-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 3.9A 1206-8

Package: 8-SMD, Flat Lead

Stock3,896,664
BS108/01,126
NXP

MOSFET N-CH 200V 300MA SOT54

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2,864
RSS105N03TB
Rohm Semiconductor

MOSFET N-CH 30V 10.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock14,244
STD90N4F3
STMicroelectronics

MOSFET N-CH 40V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
IPA180N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 28A TO220-FP

Package: TO-220-3 Full Pack

Stock6,816
IXTQ120N15T
IXYS

MOSFET N-CH 150V 120A TO-3P

Package: TO-3P-3, SC-65-3

Stock2,752
NTMFS4H02NFT1G
ON Semiconductor

MOSFET N-CH 25V 37A SO8FL

Package: 8-PowerTDFN

Stock3,264
NVMFS5830NLT3G
ON Semiconductor

MOSFET N-CH 40V 185A SO8FL

Package: 8-PowerTDFN

Stock4,928
STP4N80K5
STMicroelectronics

MOSFET N-CH 800V 3A TO-220AB

Package: TO-220-3

Stock8,796
BSC350N20NSFDATMA1
Infineon Technologies

MOSFET N-CH 200V 8TDSON

Package: 8-PowerTDFN

Stock48,984
IPU80R4K5P7AKMA1
Infineon Technologies

MOSFET N-CH 800V 1.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock13,584
SI5424DC-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 6A 1206-8

Package: 8-SMD, Flat Lead

Stock63,480
SUP90N06-6M0P-E3
Vishay Siliconix

MOSFET N-CH 60V 90A TO220AB

Package: TO-220-3

Stock60,012

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP10N10L	Infineon Technologies	MOSFET N-CH 100V 10.3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 444pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock60,000	MOSFET (Metal Oxide)	100V	10.3A (Tc)	4.5V, 10V	2V @ 21µA	22nC @ 10V	444pF @ 25V	±20V	-	50W (Tc)	154 mOhm @ 8.1A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRFR9024NTRL	Infineon Technologies	MOSFET P-CH 55V 11A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock8,844	MOSFET (Metal Oxide)	55V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	38W (Tc)	175 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTLUS3A39PZCTAG	ON Semiconductor	MOSFET P-CH 20V 5.2A UDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	Package: 6-PowerUFDFN	Stock7,664	MOSFET (Metal Oxide)	20V	3.4A (Ta)	1.5V, 4.5V	1V @ 250µA	10.4nC @ 4.5V	920pF @ 15V	±8V	-	600mW (Ta)	39 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
GP2M004A060FG	Global Power Technologies Group	MOSFET N-CH 600V 4A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30.4W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,552	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	12nC @ 10V	545pF @ 25V	±30V	-	30.4W (Tc)	2.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
UPA2735GR-E1-AT	Renesas Electronics America	MOSFET P-CH 30V 16A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 16A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)	Package: 8-PowerSOIC (0.173", 4.40mm Width)	Stock2,000	MOSFET (Metal Oxide)	30V	16A (Ta)	4.5V, 10V	-	195nC @ 10V	6250pF @ 10V	±20V	-	1.1W (Ta)	5 mOhm @ 16A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-PowerSOIC (0.173", 4.40mm Width)
RJL5020DPK-00#T0	Renesas Electronics America	MOSFET N-CH 500V 38A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 19A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,880	MOSFET (Metal Oxide)	500V	38A (Ta)	10V	-	140nC @ 10V	4750pF @ 25V	±30V	-	200W (Tc)	135 mOhm @ 19A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
2N7002MTF	Fairchild/ON Semiconductor	MOSFET N-CH 60V 0.115A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock673,524	MOSFET (Metal Oxide)	60V	115mA (Tc)	5V, 10V	3V @ 1mA	-	50pF @ 25V	±20V	-	200mW (Ta)	7.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI5441DC-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 3.9A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock3,896,664	MOSFET (Metal Oxide)	20V	3.9A (Ta)	2.5V, 4.5V	1.4V @ 250µA	22nC @ 4.5V	-	±12V	-	1.3W (Ta)	55 mOhm @ 3.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
BS108/01,126	NXP	MOSFET N-CH 200V 300MA SOT54 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 2.8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2,864	MOSFET (Metal Oxide)	200V	300mA (Ta)	2.8V	1.8V @ 1mA	-	120pF @ 25V	±20V	-	1W (Ta)	5 Ohm @ 100mA, 2.8V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
RSS105N03TB	Rohm Semiconductor	MOSFET N-CH 30V 10.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock14,244	MOSFET (Metal Oxide)	30V	10.5A (Ta)	4V, 10V	2.5V @ 1mA	15nC @ 5V	1130pF @ 10V	20V	-	2W (Ta)	11.7 mOhm @ 10.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
STD90N4F3	STMicroelectronics	MOSFET N-CH 40V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	54nC @ 10V	2200pF @ 25V	±20V	-	110W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPA180N10N3GXKSA1	Infineon Technologies	MOSFET N-CH 100V 28A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,816	MOSFET (Metal Oxide)	100V	28A (Tc)	6V, 10V	3.5V @ 35µA	25nC @ 10V	1800pF @ 50V	±20V	-	30W (Tc)	18 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220FP	TO-220-3 Full Pack
IXTQ120N15T	IXYS	MOSFET N-CH 150V 120A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock2,752	MOSFET (Metal Oxide)	150V	120A (Tc)	-	-	150nC @ 10V	4900pF @ 25V	-	-	-	16 mOhm @ 500mA, 10V	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
NTMFS4H02NFT1G	ON Semiconductor	MOSFET N-CH 25V 37A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2652pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,264	MOSFET (Metal Oxide)	25V	37A (Ta), 193A (Tc)	4.5V, 10V	2.1V @ 250µA	40.9nC @ 10V	2652pF @ 12V	±20V	-	3.13W (Ta), 83W (Tc)	1.4 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NVMFS5830NLT3G	ON Semiconductor	MOSFET N-CH 40V 185A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,928	MOSFET (Metal Oxide)	40V	29A (Ta)	4.5V, 10V	2.4V @ 250µA	113nC @ 10V	5880pF @ 25V	±20V	-	3.8W (Ta), 158W (Tc)	2.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
STP4N80K5	STMicroelectronics	MOSFET N-CH 800V 3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock8,796	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	5V @ 100µA	10.5nC @ 10V	175pF @ 100V	±30V	-	60W (Tc)	2.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
BSC350N20NSFDATMA1	Infineon Technologies	MOSFET N-CH 200V 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock48,984	MOSFET (Metal Oxide)	200V	35A (Tc)	10V	4V @ 90µA	30nC @ 10V	2410pF @ 100V	±20V	-	150W (Tc)	35 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPU80R4K5P7AKMA1	Infineon Technologies	MOSFET N-CH 800V 1.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 13W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock13,584	MOSFET (Metal Oxide)	800V	1.5A (Tc)	10V	3.5V @ 200µA	4nC @ 10V	250pF @ 500V	±20V	Super Junction	13W (Tc)	1.4 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
SI5424DC-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 6A 1206-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock63,480	MOSFET (Metal Oxide)	30V	6A (Tc)	4.5V, 10V	2.3V @ 250µA	32nC @ 10V	950pF @ 15V	±25V	-	2.5W (Ta), 6.25W (Tc)	24 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
SUP90N06-6M0P-E3	Vishay Siliconix	MOSFET N-CH 60V 90A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,012	MOSFET (Metal Oxide)	60V	90A (Tc)	10V	4.5V @ 250µA	120nC @ 10V	4700pF @ 30V	±20V	-	3.75W (Ta), 272W (Tc)	6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFU120_R4941	onsemi	MOSFET N-CH 100V 8.4A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 270mOhm @ 5.9A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	8.4A (Tc)	-	4V @ 250µA	15 nC @ 10 V	350 pF @ 25 V	-	-	-	270mOhm @ 5.9A, 10V	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
BSC007N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 100A TDSON-8-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 381A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 188W Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Stock14,031	MOSFET (Metal Oxide)	40 V	381A (Tc)	4.5V, 10V	2.3V @ 250µA	94 nC @ 4.5 V	8400 pF @ 20 V	±20V	-	188W	0.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
SI5618A-TP	Micro Commercial Co	Interface FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock2,310	MOSFET (Metal Oxide)	60 V	1.6A (Ta)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	380 pF @ 30 V	±20V	-	1.5W	160mOhm @ 1.5A, 10V	-55°C ~ 150°C	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMN2310UT-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT523 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.2A (Ta)	1.8V, 4.5V	950mV @ 250µA	0.7 nC @ 4.5 V	38 pF @ 10 V	±8V	-	290mW (Ta)	240mOhm @ 300mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
DMP2900UFBQ-7B	Diodes Incorporated	MOSFET BVDSS: 8V~24V X1-DFN1006- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 990mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 550mW (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1006-3 Package / Case: 3-UFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	990mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.7 nC @ 4.5 V	49 pF @ 16 V	±6V	-	550mW (Ta)	750mOhm @ 430mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN
NDS355AN-F169	onsemi	MOSFET N-CH 30V 1.7A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	1.7A (Ta)	4.5V, 10V	2V @ 250µA	5 nC @ 5 V	195 pF @ 15 V	±20V	-	500mW (Ta)	85mOhm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NP88N075KUE-E1-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	88A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
RSS095N05HZGTB	Rohm Semiconductor	NCH 45V 9.5A POWER MOSFET: RSS09 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock6,750	MOSFET (Metal Oxide)	45 V	9.5A (Ta)	4V, 10V	2.5V @ 1mA	26.5 nC @ 5 V	1830 pF @ 10 V	±20V	-	1.4W (Ta)	16mOhm @ 9.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)