Page 1315 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL2703STRLPBF
Infineon Technologies

MOSFET N-CH 30V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,712
IRLR3410CPBF
Infineon Technologies

MOSFET N-CH 100V 17A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,760
IPI45N06S3-16
Infineon Technologies

MOSFET N-CH 55V 45A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,576
IRFR120NTRRPBF
Infineon Technologies

MOSFET N-CH 100V 9.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock22,704
RCD040N25TL
Rohm Semiconductor

MOSFET N-CH 250V 4A SOT-428

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock36,540
APTM120DA29TG
Microsemi Corporation

MOSFET N-CH 1200V 34A SP4

Package: SP4

Stock2,176
FQD20N06LTM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 17.2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock117,180
STE180NE10
STMicroelectronics

MOSFET N-CH 100V 180A ISOTOP

Package: ISOTOP

Stock7,264
IPA65R110CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 31.2A TO220

Package: TO-220-3 Full Pack

Stock4,528
IPP80P04P4L06AKSA1
Infineon Technologies

MOSFET P-CH TO220-3

Package: TO-220-3

Stock5,952
AOB1608L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 11A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,808
AOT8N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 8A TO220

Package: TO-220-3

Stock266,520
NTLUS3A18PZTBG
ON Semiconductor

MOSFET P-CH 20V 8.2A 6UDFN

Package: 6-UDFN Exposed Pad

Stock5,904
PSMN1R1-25YLC,115
Nexperia USA Inc.

MOSFET N-CH 25V 100A LFPAK

Package: SC-100, SOT-669

Stock7,600
IRF9Z14SPBF
Vishay Siliconix

MOSFET P-CH 60V 6.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock30,312
SIR850DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 30A PPAK SO-8

Package: PowerPAK? SO-8

Stock555,756
BSS123WQ-7-F
Diodes Incorporated

MOSFET N-CH 100V 0.17A SOT323

Package: SC-70, SOT-323

Stock5,472
SIHG47N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 47A TO-247AC

Package: TO-247-3

Stock5,888
XPN7R104NC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8TSON

Package: -

Stock12,150
DMTH6016LFDFWQ-13
Diodes Incorporated

MOSFET N-CH 60V 9.4A 6UDFN

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL2703STRLPBF	Infineon Technologies	MOSFET N-CH 30V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,712	MOSFET (Metal Oxide)	30V	24A (Tc)	4.5V, 10V	1V @ 250µA	15nC @ 4.5V	450pF @ 25V	±16V	-	45W (Tc)	40 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLR3410CPBF	Infineon Technologies	MOSFET N-CH 100V 17A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,760	MOSFET (Metal Oxide)	100V	17A (Tc)	-	2V @ 250µA	34nC @ 5V	800pF @ 25V	-	-	-	105 mOhm @ 10A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPI45N06S3-16	Infineon Technologies	MOSFET N-CH 55V 45A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,576	MOSFET (Metal Oxide)	55V	45A (Tc)	10V	4V @ 30µA	57nC @ 10V	2980pF @ 25V	±20V	-	65W (Tc)	15.7 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR120NTRRPBF	Infineon Technologies	MOSFET N-CH 100V 9.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock22,704	MOSFET (Metal Oxide)	100V	9.4A (Tc)	10V	4V @ 250µA	25nC @ 10V	330pF @ 25V	±20V	-	48W (Tc)	210 mOhm @ 5.6A, 10V	-	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
RCD040N25TL	Rohm Semiconductor	MOSFET N-CH 250V 4A SOT-428 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock36,540	MOSFET (Metal Oxide)	250V	4A (Ta)	10V	-	-	-	±30V	-	20W (Tc)	-	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
APTM120DA29TG	Microsemi Corporation	MOSFET N-CH 1200V 34A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 34A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock2,176	MOSFET (Metal Oxide)	1200V	34A	10V	5V @ 5mA	374nC @ 10V	10300pF @ 25V	±30V	-	780W (Tc)	348 mOhm @ 17A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FQD20N06LTM	Fairchild/ON Semiconductor	MOSFET N-CH 60V 17.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 8.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock117,180	MOSFET (Metal Oxide)	60V	17.2A (Tc)	5V, 10V	2.5V @ 250µA	13nC @ 5V	630pF @ 25V	±20V	-	2.5W (Ta), 38W (Tc)	60 mOhm @ 8.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STE180NE10	STMicroelectronics	MOSFET N-CH 100V 180A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 795nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	Package: ISOTOP	Stock7,264	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4V @ 250µA	795nC @ 10V	21000pF @ 25V	±20V	-	360W (Tc)	6 Ohm @ 40A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP
IPA65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,528	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	4.5V @ 1.3mA	118nC @ 10V	3240pF @ 100V	±20V	-	34.7W (Tc)	110 mOhm @ 12.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPP80P04P4L06AKSA1	Infineon Technologies	MOSFET P-CH TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock5,952	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.2V @ 150µA	104nC @ 10V	6580pF @ 25V	+5V, -16V	-	88W (Tc)	6.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AOB1608L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 11A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,808	MOSFET (Metal Oxide)	60V	11A (Ta), 140A (Tc)	10V	3.7V @ 250µA	84nC @ 10V	3690pF @ 25V	±20V	-	2.1W (Ta), 333W (Tc)	7.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOT8N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock266,520	MOSFET (Metal Oxide)	650V	8A (Tc)	10V	4.5V @ 250µA	28nC @ 10V	1400pF @ 25V	±30V	-	208W (Tc)	1.15 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NTLUS3A18PZTBG	ON Semiconductor	MOSFET P-CH 20V 8.2A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock5,904	MOSFET (Metal Oxide)	20V	5.1A (Ta)	1.5V, 4.5V	1V @ 250µA	28nC @ 4.5V	2240pF @ 15V	±8V	-	700mW (Ta)	18 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
PSMN1R1-25YLC,115	Nexperia USA Inc.	MOSFET N-CH 25V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5287pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,600	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	83nC @ 10V	5287pF @ 12V	±20V	-	215W (Tc)	1.15 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IRF9Z14SPBF	Vishay Siliconix	MOSFET P-CH 60V 6.7A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock30,312	MOSFET (Metal Oxide)	60V	6.7A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	500 mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIR850DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock555,756	MOSFET (Metal Oxide)	25V	30A (Tc)	4.5V, 10V	3V @ 250µA	30nC @ 10V	1120pF @ 15V	±20V	-	4.8W (Ta), 41.7W (Tc)	7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
BSS123WQ-7-F	Diodes Incorporated	MOSFET N-CH 100V 0.17A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock5,472	MOSFET (Metal Oxide)	100V	170mA (Ta)	4.5V, 10V	2V @ 1mA	-	60pF @ 25V	±20V	-	200mW (Ta)	6 Ohm @ 170mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SIHG47N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 47A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5682pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock5,888	MOSFET (Metal Oxide)	650V	47A (Tc)	10V	4V @ 250µA	273nC @ 10V	5682pF @ 100V	±30V	-	417W (Tc)	72 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
XPN7R104NC-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 20A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Package / Case: 8-PowerVDFN	Package: -	Stock12,150	MOSFET (Metal Oxide)	40 V	20A (Ta)	4.5V, 10V	2.5V @ 200µA	21 nC @ 10 V	1290 pF @ 10 V	±20V	-	840mW (Ta), 65W (Tc)	7.1mOhm @ 10A, 10V	175°C	Surface Mount	8-TSON Advance-WF (3.1x3.1)	8-PowerVDFN
DMTH6016LFDFWQ-13	Diodes Incorporated	MOSFET N-CH 60V 9.4A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.06W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	9.4A (Ta)	4.5V, 10V	3V @ 250µA	15.3 nC @ 10 V	925 pF @ 30 V	±20V	-	1.06W (Ta)	18mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	U-DFN2020-6 (SWP) (Type F)	6-UDFN Exposed Pad
BUK6D230-80EX	Nexperia USA Inc.	MOSFET N-CH 80V 1.9A/5.1A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock25,581	MOSFET (Metal Oxide)	80 V	1.9A (Ta), 5.1A (Tc)	4.5V, 10V	2.7V @ 250µA	7.2 nC @ 10 V	215 pF @ 40 V	±20V	-	2W (Ta), 15W (Tc)	230mOhm @ 1.9A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
BSS84Q-7-F	Diodes Incorporated	BSS FAMILY SOT23 T&R 3K FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock5,607	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V	2V @ 1mA	0.59 nC @ 10 V	45 pF @ 25 V	±20V	-	300mW (Ta)	10Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PJP18N20_T0_00001	Panjit International Inc.	TO-220AB, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	3V @ 250µA	24 nC @ 10 V	1017 pF @ 25 V	±20V	-	89W (Tc)	160mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS4C308NT3G	onsemi	MOSFET N-CH 30V 88A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK6R8A08QM-S4X	Toshiba Semiconductor and Storage	UMOS10 TO-220SIS 80V 6.8MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 29A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: -	Stock120	MOSFET (Metal Oxide)	80 V	58A (Tc)	6V, 10V	3.5V @ 500µA	39 nC @ 10 V	2700 pF @ 40 V	±20V	-	41W (Tc)	6.8mOhm @ 29A, 10V	175°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
SSF3912	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 6.5A, 30V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Stock18,000	MOSFET (Metal Oxide)	30 V	6.5A (Tc)	4.5V, 10V	2.5V @ 250µA	8 nC @ 4.5 V	500 pF @ 25 V	±20V	-	1.56W (Tc)	24mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
DMT3009LFVWQ-7	Diodes Incorporated	MOSFET N-CH 30V 12A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Stock3,870	MOSFET (Metal Oxide)	30 V	12A (Ta), 50A (Tc)	3.8V, 10V	3V @ 250µA	12 nC @ 10 V	823 pF @ 15 V	±20V	-	2.3W (Ta), 35.7W (Tc)	11mOhm @ 14.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
FDPF035N06B-F154	onsemi	MOSFET N-CH 60V 88A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46.3W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	60 V	88A (Tc)	-	4V @ 250µA	99 nC @ 10 V	8030 pF @ 30 V	±20V	-	46.3W (Tc)	3.5mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack