Page 1316 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6721STR1PBF
Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

Package: DirectFET? Isometric SQ

Stock6,432
SPU04N60S5BKMA1
Infineon Technologies

MOSFET N-CH 600V 4.5A TO-251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,744
RP1L055SNTR
Rohm Semiconductor

MOSFET N-CH 60V 5.5A MPT6

Package: 6-SMD, Flat Leads

Stock5,824
FDU8896
Fairchild/ON Semiconductor

MOSFET N-CH 30V 94A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock59,508
FDB2670
Fairchild/ON Semiconductor

MOSFET N-CH 200V 19A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,520
IRF9520
Vishay Siliconix

MOSFET P-CH 100V 6.8A TO-220AB

Package: TO-220-3

Stock489,552
IRFS4228PBF
Infineon Technologies

MOSFET N-CH 150V 83A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,312
IRFR3708TRLPBF
Infineon Technologies

MOSFET N-CH 30V 61A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,112
IXFG55N50
IXYS

MOSFET N-CH 500V 48A ISO264

Package: ISO264?

Stock6,096
AOD8N25
Alpha & Omega Semiconductor Inc.

MOSFET N CH 250V 8A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,640
TSM2N7000KCT B0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock5,040
STP4NK80ZFP
STMicroelectronics

MOSFET N-CH 800V 3A TO-220FP

Package: TO-220-3 Full Pack

Stock281,616
PSMN013-60YLX
Nexperia USA Inc.

MOSFET N-CH 60V LFPAK56

Package: SC-100, SOT-669

Stock6,640
CSD23381F4
Texas Instruments

MOSFET P-CH 12V 3PICOSTAR

Package: 3-XFDFN

Stock349,464
EPC2034ENGRT
EPC

TRANS GAN 200V 31A BUMPED DIE

Package: Die

Stock27,486
FDMS86104
Fairchild/ON Semiconductor

MOSFET N-CH 100V 7A POWER56

Package: 8-PowerTDFN

Stock433,116
FDD86580_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,184
DMTH4007SPSQ-13
Diodes Incorporated

MOSFET N-CH 40V 15.7A POWERDI506

Package: 8-PowerTDFN

Stock20,880
FQD17P06TM
Fairchild/ON Semiconductor

MOSFET P-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock190,596
IPP881NE7NGXKSA1
Infineon Technologies

MOSFET

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6721STR1PBF	Infineon Technologies	MOSFET N-CH 30V 14A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock6,432	MOSFET (Metal Oxide)	30V	14A (Ta), 60A (Tc)	4.5V, 10V	2.4V @ 25µA	17nC @ 4.5V	1430pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	7.3 mOhm @ 14A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
SPU04N60S5BKMA1	Infineon Technologies	MOSFET N-CH 600V 4.5A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,744	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	5.5V @ 200µA	22.9nC @ 10V	580pF @ 25V	±20V	-	50W (Tc)	950 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
RP1L055SNTR	Rohm Semiconductor	MOSFET N-CH 60V 5.5A MPT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MPT6 Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock5,824	MOSFET (Metal Oxide)	60V	5.5A (Ta)	4V, 10V	3V @ 1mA	14nC @ 10V	730pF @ 10V	±20V	-	2W (Ta)	49 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	MPT6	6-SMD, Flat Leads
FDU8896	Fairchild/ON Semiconductor	MOSFET N-CH 30V 94A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock59,508	MOSFET (Metal Oxide)	30V	17A (Ta), 94A (Tc)	4.5V, 10V	2.5V @ 250µA	60nC @ 10V	2525pF @ 15V	±20V	-	80W (Tc)	5.7 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
FDB2670	Fairchild/ON Semiconductor	MOSFET N-CH 200V 19A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,520	MOSFET (Metal Oxide)	200V	19A (Ta)	10V	4.5V @ 250µA	38nC @ 10V	1320pF @ 100V	±20V	-	93W (Tc)	130 mOhm @ 10A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9520	Vishay Siliconix	MOSFET P-CH 100V 6.8A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock489,552	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	60W (Tc)	600 mOhm @ 4.1A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFS4228PBF	Infineon Technologies	MOSFET N-CH 150V 83A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,312	MOSFET (Metal Oxide)	150V	83A (Tc)	10V	5V @ 250µA	107nC @ 10V	4530pF @ 25V	±30V	-	330W (Tc)	15 mOhm @ 33A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR3708TRLPBF	Infineon Technologies	MOSFET N-CH 30V 61A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,112	MOSFET (Metal Oxide)	30V	61A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFG55N50	IXYS	MOSFET N-CH 500V 48A ISO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 27.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISO264? Package / Case: ISO264?	Package: ISO264?	Stock6,096	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	4.5V @ 8mA	330nC @ 10V	9400pF @ 25V	±20V	-	400W (Tc)	90 mOhm @ 27.5A, 10V	-40°C ~ 150°C (TJ)	Through Hole	ISO264?	ISO264?
AOD8N25	Alpha & Omega Semiconductor Inc.	MOSFET N CH 250V 8A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 560 mOhm @ 1.5A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,640	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	4.3V @ 250µA	7.2nC @ 10V	306pF @ 25V	±30V	-	78W (Tc)	560 mOhm @ 1.5A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
TSM2N7000KCT B0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, TRENC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 7.32pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock5,040	MOSFET (Metal Oxide)	60V	300mA (Ta)	5V, 10V	2.5V @ 250µA	0.4nC @ 4.5V	7.32pF @ 25V	±20V	-	400mW (Ta)	5 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
STP4NK80ZFP	STMicroelectronics	MOSFET N-CH 800V 3A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock281,616	MOSFET (Metal Oxide)	800V	3A (Tc)	10V	4.5V @ 50µA	22.5nC @ 10V	575pF @ 25V	±30V	-	25W (Tc)	3.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
PSMN013-60YLX	Nexperia USA Inc.	MOSFET N-CH 60V LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2603pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,640	MOSFET (Metal Oxide)	60V	53A (Tc)	5V, 10V	2.1V @ 1mA	33.2nC @ 10V	2603pF @ 25V	±20V	-	95W (Tc)	13 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
CSD23381F4	Texas Instruments	MOSFET P-CH 12V 3PICOSTAR FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 236pF @ 6V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 175 mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock349,464	MOSFET (Metal Oxide)	12V	2.3A (Ta)	1.8V, 4.5V	1.2V @ 250µA	1.14nC @ 4.5V	236pF @ 6V	-8V	-	500mW (Ta)	175 mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
EPC2034ENGRT	EPC	TRANS GAN 200V 31A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock27,486	GaNFET (Gallium Nitride)	200V	31A (Ta)	5V	2.5V @ 7mA	8.5nC @ 5V	940pF @ 100V	+6V, -4V	-	-	10 mOhm @ 20A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
FDMS86104	Fairchild/ON Semiconductor	MOSFET N-CH 100V 7A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 923pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock433,116	MOSFET (Metal Oxide)	100V	7A (Ta), 16A (Tc)	6V, 10V	4V @ 250µA	16nC @ 10V	923pF @ 50V	±20V	-	2.5W (Ta), 73W (Tc)	24 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDD86580_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tj) Rds On (Max) @ Id, Vgs: 19 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,184	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4.2V @ 250µA	30nC @ 10V	1430pF @ 30V	±20V	-	75W (Tj)	19 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMTH4007SPSQ-13	Diodes Incorporated	MOSFET N-CH 40V 15.7A POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2082pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock20,880	MOSFET (Metal Oxide)	40V	15.7A (Ta), 100A (Tc)	10V	4V @ 250µA	41.9nC @ 10V	2082pF @ 25V	±20V	-	2.8W (Ta), 136W (Tc)	7.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
FQD17P06TM	Fairchild/ON Semiconductor	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 135 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock190,596	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	27nC @ 10V	900pF @ 25V	±25V	-	2.5W (Ta), 44W (Tc)	135 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP881NE7NGXKSA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMFS6H852NWFT1G	onsemi	MOSFET N-CH 80V 10A/40A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	80 V	10A (Ta), 40A (Tc)	10V	4V @ 45µA	13 nC @ 10 V	760 pF @ 40 V	±20V	-	3.6W (Ta), 54W (Tc)	14.2mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
AUIRFS4010-7TRL	Infineon Technologies	MOSFET N-CH 100V 190A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	190A (Tc)	-	4V @ 250µA	230 nC @ 10 V	9830 pF @ 50 V	-	-	380W (Tc)	4mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2PAK (6 Leads + Tab)
2SJ562-TD-E	onsemi	PCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPT022N10NF2SATMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 169µA Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	Package: -	Stock5,400	MOSFET (Metal Oxide)	100 V	29A (Ta), 236A (Tc)	6V, 10V	3.8V @ 169µA	155 nC @ 10 V	7300 pF @ 50 V	±20V	-	3.8W (Ta), 250W (Tc)	2.25mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8	8-PowerSFN
IRFR1N60APBF-BE3	Vishay Siliconix	MOSFET N-CH 600V 1.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,985	MOSFET (Metal Oxide)	600 V	1.4A (Tc)	-	4V @ 250µA	14 nC @ 10 V	229 pF @ 25 V	±30V	-	36W (Tc)	7Ohm @ 840mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDBL86063-F085	onsemi	MOSFET N-CH 100V 240A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Stock10,272	MOSFET (Metal Oxide)	100 V	240A (Tc)	10V	4V @ 250µA	95 nC @ 10 V	5120 pF @ 50 V	±20V	-	357W (Tj)	2.6mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
FDPF8D5N10C	onsemi	MOSFET N-CH 100V 76A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Stock2,520	MOSFET (Metal Oxide)	100 V	76A (Tc)	10V	4V @ 130µA	34 nC @ 10 V	2475 pF @ 50 V	±20V	-	2.4W (Ta), 35W (Tc)	8.5mOhm @ 76A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
SCT025W120G3-4AG	STMicroelectronics	TO247-4 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 800 V Vgs (Max): +18V, -5V FET Feature: - Power Dissipation (Max): 388W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 25A, 18V Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	56A (Tc)	15V, 18V	4.2V @ 5mA	73 nC @ 18 V	1990 pF @ 800 V	+18V, -5V	-	388W (Tc)	37mOhm @ 25A, 18V	-55°C ~ 200°C (TJ)	Through Hole	TO-247-4	TO-247-4