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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock7,312 |
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MOSFET (Metal Oxide) | 25V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 50µA | 29nC @ 5V | 3660pF @ 15V | ±20V | - | 2.8W (Ta), 69W (Tc) | 3.7 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 147A SO8-FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock6,272 |
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MOSFET (Metal Oxide) | 30V | 17.1A (Ta), 147A (Tc) | 4.5V, 10V | 2V @ 250µA | 76.5nC @ 10V | 5505pF @ 15V | ±20V | - | 930mW (Ta), 69.44W (Tc) | 2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 60V 24A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock62,388 |
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MOSFET (Metal Oxide) | 60V | 24A (Ta) | 10V | 4V @ 250µA | 48nC @ 10V | 1200pF @ 25V | ±20V | - | 1.36W (Ta), 62.5W (Tj) | 42 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH BARE DIE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock3,472 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,856 |
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MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 200V 6A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42.5W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock66,072 |
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MOSFET (Metal Oxide) | 200V | 1.5A (Ta), 6A (Tc) | 10V | 3.7V @ 250µA | 115nC @ 10V | 328pF @ 100V | ±20V | - | 2.5W (Ta), 42.5W (Tc) | 400 mOhm @ 3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 11.6A SO-8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3044pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: 8-PowerTDFN, 5 Leads |
Stock5,904 |
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MOSFET (Metal Oxide) | 30V | 11.6A (Ta), 79A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 43nC @ 10V | 3044pF @ 15V | ±20V | - | 920mW (Ta), 43W (Tc) | 3.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor Inc. |
MOSFET N CH 100V 4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock33,324 |
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MOSFET (Metal Oxide) | 100V | 4A (Ta), 14A (Tc) | 4.5V, 10V | 2.9V @ 250µA | 10nC @ 10V | 390pF @ 50V | ±20V | - | 2.5W (Ta), 30W (Tc) | 68 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 100V 100A VSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4810pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: 8-VSON (5x6)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,936 |
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MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 3.2V @ 250µA | 62nC @ 10V | 4810pF @ 50V | ±20V | - | 3.1W (Ta), 195W (Tc) | 4.9 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | - | 8-VSON (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 30V 12A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V
- Vgs (Max): +22V, -20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock475,920 |
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MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 1V @ 250µA | 8nC @ 4.5V | 1290pF @ 25V | +22V, -20V | - | 2.7W (Tc) | 7.5 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 650V 4A X2 TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,400 |
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MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 5V @ 250µA | 8.3nC @ 10V | 455pF @ 25V | ±30V | - | 80W (Tc) | 850 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Fairchild/ON Semiconductor |
MOSFET P-CH 100V 16.5A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock99,588 |
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MOSFET (Metal Oxide) | 100V | 16.5A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 100W (Tc) | 190 mOhm @ 8.25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 500V 9A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock75,696 |
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MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1030pF @ 25V | ±30V | - | 135W (Tc) | 800 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET P-CH 20V 700MA DFN1006
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.4A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: 3-XFDFN
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Package: 3-XFDFN |
Stock3,440 |
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MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.8V, 4.5V | 1V @ 100µA | - | 100pF @ 10V | ±8V | - | 400mW (Ta) | 300 mOhm @ 1.4A, 4.5V | 150°C (TJ) | Surface Mount | DFN1006-3 | 3-XFDFN |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock124,056 |
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MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 3.5V @ 440µA | 29nC @ 10V | 1100pF @ 100V | ±20V | - | 96W (Tc) | 299 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 25V 24A WDSON-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
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Package: 3-WDSON |
Stock132,564 |
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MOSFET (Metal Oxide) | 25V | 24A (Ta), 75A (Tc) | 4.5V, 10V | 2V @ 250µA | 23nC @ 10V | 1700pF @ 12V | ±20V | - | 2.2W (Ta), 28W (Tc) | 3 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
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Cree/Wolfspeed |
900V, 120 MOHM, G3 SIC MOSFET
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
- Vgs (Max): +18V, -8V
- FET Feature: -
- Power Dissipation (Max): 97W (Tc)
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock16,020 |
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SiCFET (Silicon Carbide) | 900V | 23A (Tc) | 15V | 3.5V @ 3mA | 17.3nC @ 15V | 350pF @ 600V | +18V, -8V | - | 97W (Tc) | 155 mOhm @ 15A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Renesas Electronics Corporation |
MOSFET P-CH 12V SC-96 SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: SC-96-3, Thin Mini Mold
- Package / Case: SC-96
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 12 V | 3.5A (Ta) | - | 1.5V @ 1mA | 6.2 nC @ 4 V | 630 pF @ 10 V | - | - | - | 44mOhm @ 2A, 4.5V | - | Surface Mount | SC-96-3, Thin Mini Mold | SC-96 |
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Toshiba Semiconductor and Storage |
POWER MOSFET TRANSISTOR TO-247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.69mA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L(T)
- Package / Case: TO-247-4
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Package: - |
Stock75 |
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MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 4V @ 1.69mA | 62 nC @ 10 V | 3650 pF @ 300 V | ±30V | - | 270W (Tc) | 65mOhm @ 19A, 10V | 150°C | Through Hole | TO-247-4L(T) | TO-247-4 |
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Vishay Siliconix |
N-CHANNEL 100-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 100 V | 23.2A (Ta), 95A (Tc) | 7.5V, 10V | 3.4V @ 250µA | 108 nC @ 10 V | 5400 pF @ 50 V | ±20V | - | 6.25W (Ta), 125W (Tc) | 4.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
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Tagore Technology |
GAN FET HEMT 650V .236OHM 22QFN
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 6V
- Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 236mOhm @ 500mA, 6V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 22-QFN (5x7)
- Package / Case: 22-PowerVFQFN
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Package: - |
Stock8,949 |
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GaNFET (Gallium Nitride) | 650 V | 10A (Tc) | 0V, 6V | 2.5V @ 5.5mA | 1.5 nC @ 6 V | 55 pF @ 400 V | ±20V | - | - | 236mOhm @ 500mA, 6V | -55°C ~ 150°C (TJ) | Surface Mount | 22-QFN (5x7) | 22-PowerVFQFN |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 3.9V @ 500µA | 60 nC @ 10 V | 1200 pF @ 25 V | ±20V | - | 125W (Tc) | 380mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 80V 300A 8HSOF
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (DC)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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Package: - |
Stock12,516 |
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MOSFET (Metal Oxide) | 80 V | 300A (DC) | 6V, 10V | 3.8V @ 230µA | 187 nC @ 10 V | 13178 pF @ 40 V | ±20V | - | 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
SIC DISCRETE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock2,991 |
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Central Semiconductor Corp |
MOSFET P-CH 30V 11A DIE
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 8 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 80 nC @ 10 V | 3100 pF @ 8 V | ±20V | - | - | 20mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Nexperia USA Inc. |
MOSFET N-CH 60V 5A DFN2020MD-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 18 nC @ 10 V | 590 pF @ 30 V | ±20V | - | 15W (Tc) | 43mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Rohm Semiconductor |
HIGH-SPEED SWITCHING NCH 800V 6A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock2,352 |
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MOSFET (Metal Oxide) | 800 V | 6A (Ta) | 10V | 4.5V @ 4mA | 22 nC @ 10 V | 650 pF @ 100 V | ±20V | - | 52W (Tc) | 900mOhm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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