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Infineon Technologies |
MOSFET N-CH 100V 48A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,096 |
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MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | ±20V | - | 140W (Tc) | 25 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 20V 2.2A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,232 |
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MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | 260pF @ 15V | ±12V | Schottky Diode (Isolated) | 2W (Ta) | 270 mOhm @ 1.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 3.1A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock120,012 |
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MOSFET (Metal Oxide) | 60V | 3.1A (Ta) | 4.5V, 10V | 1V @ 250µA | 5.7nC @ 10V | 330pF @ 40V | ±20V | - | 2W (Ta) | 120 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 100V 28A TO-220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Current Sensing
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-5
- Package / Case: TO-220-5
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Package: TO-220-5 |
Stock2,304 |
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MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 4V @ 250µA | 69nC @ 10V | 1300pF @ 25V | ±20V | Current Sensing | 150W (Tc) | 77 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 650V 21A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,480 |
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MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 3.5V @ 790µA | 52nC @ 10V | 2000pF @ 100V | ±20V | - | 192W (Tc) | 165 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Microsemi Corporation |
MOSFET N-CH 1000V 78A SP6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 78A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
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Package: SP6 |
Stock7,248 |
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MOSFET (Metal Oxide) | 1000V | 78A | 10V | 5V @ 10mA | 744nC @ 10V | 20700pF @ 25V | ±30V | - | 1250W (Tc) | 105 mOhm @ 39A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi Corporation |
MOSFET N-CH 1200V 22A T-MAX
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 690W (Tc)
- Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX? [B2]
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock2,576 |
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MOSFET (Metal Oxide) | 1200V | 22A (Tc) | 10V | 5V @ 2.5mA | 290nC @ 10V | 6200pF @ 25V | ±30V | - | 690W (Tc) | 570 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 156nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock2,000 |
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MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 1mA | 156nC @ 10V | 8250pF @ 25V | ±20V | - | 230W (Tc) | 8.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 250V 20A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock3,520 |
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MOSFET (Metal Oxide) | 250V | 20A (Tc) | 10V | 4.5V @ 250µA | 25nC @ 10V | 1028pF @ 25V | ±30V | - | 208W (Tc) | 170 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 16A POWERDI333
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerWDFN
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Package: 8-PowerWDFN |
Stock7,008 |
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MOSFET (Metal Oxide) | 30V | 16A (Ta), 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 42nC @ 10V | 2000pF @ 15V | ±20V | - | 900mW (Ta) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET P-CH 30V 2A SOT563
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-563/SCH6
- Package / Case: SOT-563, SOT-666
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Package: SOT-563, SOT-666 |
Stock5,328 |
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MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 2.6V @ 1mA | 3.9nC @ 10V | 172pF @ 10V | ±20V | - | 800mW (Ta) | 150 mOhm @ 1A, 10V | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
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IXYS |
MOSFET N-CH 500V 26A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 230 mOhm @ 132A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock12,072 |
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MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 5V @ 4mA | 42nC @ 10V | 2220pF @ 25V | ±30V | - | 500W (Tc) | 230 mOhm @ 132A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 80V 120A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 140W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat? (5x6)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock2,640 |
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MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 4570pF @ 25V | ±20V | - | 4.8W (Ta), 140W (Tc) | 4.4 mOhm @ 11.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 200V 3.8A 1212-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 1A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock779,748 |
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MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 6V, 10V | 4V @ 250µA | 25nC @ 10V | 666pF @ 50V | ±20V | - | 3.7W (Ta), 52W (Tc) | 1.05 Ohm @ 1A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock546,780 |
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MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Diodes Incorporated |
MOSFET N-CH 250V 240MA SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 25V
- Vgs (Max): ±40V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock43,080 |
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MOSFET (Metal Oxide) | 250V | 240mA (Ta) | 2.4V, 10V | 1.8V @ 1mA | 3.65nC @ 10V | 72pF @ 25V | ±40V | - | 1.2W (Ta) | 8.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 152A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock18,744 |
|
MOSFET (Metal Oxide) | 150V | 11.5A (Ta), 152A (Tc) | 6V, 10V | 3.5V @ 250µA | 136nC @ 10V | 6460pF @ 75V | ±20V | - | 2.1W (Ta), 375W (Tc) | 6.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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NXP |
PSMN2R2-30YLC/GFX
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 600V 6A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock7,413 |
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MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4V @ 80µA | 9 nC @ 10 V | 363 pF @ 400 V | ±20V | - | 30W (Tc) | 600mOhm @ 1.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
100V, 15A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251S (IPAK SL)
- Package / Case: TO-251-3 Stub Leads, IPAK
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9.3 nC @ 10 V | 1480 pF @ 50 V | ±20V | - | 50W (Tc) | 90mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251S (IPAK SL) | TO-251-3 Stub Leads, IPAK |
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Micro Commercial Co |
P-CHANNEL MOSFET,DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 96W (Tj)
- Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock25,704 |
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MOSFET (Metal Oxide) | 100 V | 28A | 4.5V, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 2100 pF @ 50 V | ±20V | - | 96W (Tj) | 52mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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onsemi |
MOSFET N-CH 650V 65A TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.1mA
- Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5945 pF @ 400 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 5V @ 2.1mA | 159 nC @ 10 V | 5945 pF @ 400 V | ±30V | - | 446W (Tc) | 40mOhm @ 32.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH TO263
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Renesas Electronics Corporation |
POWER DEVICE AUTOMOTIVE MOS MP-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 45A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZP)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,379 |
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MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 102 nC @ 10 V | 5850 pF @ 25 V | ±20V | - | 1.2W (Ta), 147W (Tc) | 2.8mOhm @ 45A, 10V | 175°C | Surface Mount | TO-252 (MP-3ZP) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Qorvo |
SICFET N-CH 1200V 7.6A TO247-3
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock1,761 |
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SiCFET (Cascode SiCJFET) | 1200 V | 7.6A (Tc) | 12V | 6V @ 10mA | 27 nC @ 15 V | 740 pF @ 100 V | ±25V | - | 100W (Tc) | 515mOhm @ 5A, 12V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Goford Semiconductor |
MOSFET P-CH 100V 1A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 253 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Tc)
- Rds On (Max) @ Id, Vgs: 670mOhm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock7,725 |
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MOSFET (Metal Oxide) | 100 V | 1A (Tc) | 10V | 3V @ 250µA | 10 nC @ 10 V | 253 pF @ 50 V | ±20V | - | 1.4W (Tc) | 670mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A 6UDFNB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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Package: - |
Stock56,964 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 2.5W (Ta) | 36mOhm @ 4A, 10V | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Renesas Electronics Corporation |
LOW VOLTAGE POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 97W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON (5x5.4)
- Package / Case: 8-PowerLDFN
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Package: - |
Stock14,805 |
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MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 4V @ 250µA | 57 nC @ 10 V | 3200 pF @ 25 V | ±20V | - | 1W (Ta), 97W (Tc) | 4.8mOhm @ 25A, 10V | 175°C | Surface Mount | 8-HSON (5x5.4) | 8-PowerLDFN |