Page 1335 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLBD59N04ETRLP
Infineon Technologies

MOSFET N-CH 40V 59A D2PAK-5

Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

Stock3,408
ZXMN3A02N8TC
Diodes Incorporated

MOSFET N-CH 30V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock415,164
AO4478
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 9A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,576
SI7452DP-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 11.5A PPAK SO-8

Package: PowerPAK? SO-8

Stock14,928
SI7196DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 16A PPAK SO-8

Package: PowerPAK? SO-8

Stock36,600
HAT2140H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 25A 5LFPAK

Package: SC-100, SOT-669

Stock23,820
BUK7511-55A,127
NXP

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock3,152
DMN5L06-7
Diodes Incorporated

MOSFET N-CH 50V 280MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock2,880
FDU8770
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,104
HUFA75617D3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 16A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,800
NTD32N06T4G
ON Semiconductor

MOSFET N-CH 60V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,168
APT60N60SCSG/TR
Microsemi Corporation

MOSFET N-CH 600V 60A D3PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,760
IXTQ88N15
IXYS

MOSFET N-CH 150V 88A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,392
EPC2019ENG
EPC

TRANS GAN 200V 8.5A BUMPED DIE

Package: Die

Stock2,288
2SK3800VR
Sanken

MOSFET N-CH 40V TO-220S

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,344
VN0550N3-G-P013
Microchip Technology

MOSFET N-CH 500V 50MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,480
DMG7401SFG-13
Diodes Incorporated

MOSFET P-CH 30V POWERDI3333-8

Package: 8-PowerWDFN

Stock2,464
STB3NK60ZT4
STMicroelectronics

MOSFET N-CH 600V 2.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock117,828
APT10021JFLL
Microsemi Corporation

MOSFET N-CH 1000V 37A SOT-227

Package: SOT-227-4, miniBLOC

Stock4,496
RQ3E150MNTB1
Rohm Semiconductor

MOSFET N-CH 30V 15A HSMT8

Package: 8-PowerVDFN

Stock3,504

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLBD59N04ETRLP	Infineon Technologies	MOSFET N-CH 40V 59A D2PAK-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-5 Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	Package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA	Stock3,408	MOSFET (Metal Oxide)	40V	59A (Tc)	5V, 10V	2V @ 250µA	50nC @ 5V	2190pF @ 25V	±10V	-	130W (Tc)	18 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-5	TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
ZXMN3A02N8TC	Diodes Incorporated	MOSFET N-CH 30V 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock415,164	MOSFET (Metal Oxide)	30V	7.3A (Ta)	4.5V, 10V	1V @ 250µA	26.8nC @ 10V	1400pF @ 25V	±20V	-	1.56W (Ta)	25 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AO4478	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 9A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,576	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	2V @ 250µA	11nC @ 10V	560pF @ 15V	±25V	-	3.1W (Ta)	19 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI7452DP-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 11.5A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 19.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock14,928	MOSFET (Metal Oxide)	60V	11.5A (Ta)	10V	4.5V @ 250µA	160nC @ 10V	-	±20V	-	1.9W (Ta)	8.3 mOhm @ 19.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7196DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 16A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1577pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 41.6W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock36,600	MOSFET (Metal Oxide)	30V	16A (Tc)	4.5V, 10V	3V @ 250µA	38nC @ 10V	1577pF @ 15V	±20V	-	5W (Ta), 41.6W (Tc)	11 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
HAT2140H-EL-E	Renesas Electronics America	MOSFET N-CH 100V 25A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock23,820	MOSFET (Metal Oxide)	100V	25A (Ta)	7V, 10V	-	105nC @ 10V	6500pF @ 10V	±20V	-	30W (Tc)	16 mOhm @ 12.5A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
BUK7511-55A,127	NXP	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3093pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,152	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	-	3093pF @ 25V	±20V	-	166W (Tc)	11 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMN5L06-7	Diodes Incorporated	MOSFET N-CH 50V 280MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,880	MOSFET (Metal Oxide)	50V	280mA (Ta)	1.8V, 2.7V	1.2V @ 250µA	-	50pF @ 25V	±20V	-	350mW (Ta)	3 Ohm @ 200mA, 2.7V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDU8770	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,104	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	73nC @ 10V	3720pF @ 13V	±20V	-	115W (Tc)	4 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
HUFA75617D3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,800	MOSFET (Metal Oxide)	100V	16A (Tc)	10V	4V @ 250µA	39nC @ 20V	570pF @ 25V	±20V	-	64W (Tc)	90 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD32N06T4G	ON Semiconductor	MOSFET N-CH 60V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Rds On (Max) @ Id, Vgs: 26 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,168	MOSFET (Metal Oxide)	60V	32A (Ta)	10V	4V @ 250µA	60nC @ 10V	1725pF @ 25V	±20V	-	1.5W (Ta), 93.75W (Tj)	26 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
APT60N60SCSG/TR	Microsemi Corporation	MOSFET N-CH 600V 60A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 431W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,760	MOSFET (Metal Oxide)	600V	60A (Tc)	10V	3.9V @ 3mA	190nC @ 10V	7200pF @ 25V	±30V	Super Junction	431W (Tc)	45 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTQ88N15	IXYS	MOSFET N-CH 150V 88A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,392	MOSFET (Metal Oxide)	150V	88A (Tc)	10V	-	-	-	±20V	-	-	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
EPC2019ENG	EPC	TRANS GAN 200V 8.5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock2,288	GaNFET (Gallium Nitride)	200V	8.5A (Ta)	5V	2.5V @ 1.5mA	2.5nC @ 5V	270pF @ 100V	+6V, -4V	-	-	50 mOhm @ 7A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
2SK3800VR	Sanken	MOSFET N-CH 40V TO-220S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220S Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,344	MOSFET (Metal Oxide)	40V	70A (Ta)	10V	4V @ 1mA	-	5100pF @ 10V	±20V	-	80W (Tc)	6 mOhm @ 35A, 10V	150°C (TJ)	Surface Mount	TO-220S	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
VN0550N3-G-P013	Microchip Technology	MOSFET N-CH 500V 50MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,480	MOSFET (Metal Oxide)	500V	50mA (Tj)	5V, 10V	4V @ 1mA	-	55pF @ 25V	±20V	-	1W (Tc)	60 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
DMG7401SFG-13	Diodes Incorporated	MOSFET P-CH 30V POWERDI3333-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2987pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,464	MOSFET (Metal Oxide)	30V	9.8A (Ta)	4.5V, 20V	3V @ 250µA	58nC @ 10V	2987pF @ 15V	±25V	-	940mW (Ta)	11 mOhm @ 12A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
STB3NK60ZT4	STMicroelectronics	MOSFET N-CH 600V 2.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock117,828	MOSFET (Metal Oxide)	600V	2.4A (Tc)	10V	4.5V @ 50µA	11.8nC @ 10V	311pF @ 25V	±30V	-	45W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT10021JFLL	Microsemi Corporation	MOSFET N-CH 1000V 37A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 37A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,496	MOSFET (Metal Oxide)	1000V	37A	10V	5V @ 5mA	395nC @ 10V	9750pF @ 25V	±30V	-	694W (Tc)	210 mOhm @ 18.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
RQ3E150MNTB1	Rohm Semiconductor	MOSFET N-CH 30V 15A HSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,504	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.5V @ 1mA	20nC @ 10V	1100pF @ 15V	±20V	-	2W (Ta)	6.7 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
FDPF20N50FT	Fairchild/ON Semiconductor	MOSFET N-CH 500V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock10,332	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	65nC @ 10V	3390pF @ 25V	±30V	-	38.5W (Tc)	260 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SI4116DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 18A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock830,220	MOSFET (Metal Oxide)	25V	18A (Tc)	2.5V, 10V	1.4V @ 250µA	56nC @ 10V	1925pF @ 15V	±12V	-	2.5W (Ta), 5W (Tc)	8.6 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
PJQ4548VP-AU_R2_002A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	11.6A (Ta), 40A (Tc)	7V, 10V	3.5V @ 50µA	9.5 nC @ 10 V	673 pF @ 25 V	±20V	-	2.5W (Ta), 30W (Tc)	10.4mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
IPT65R155CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	Package: -	Request a Quote	-	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IXTA50N28T	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVMTS1D5N08H	onsemi	MOSFET N-CH 80V 38A/273A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 273A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8220 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 258W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock4,269	MOSFET (Metal Oxide)	80 V	38A (Ta), 273A (Tc)	10V	4V @ 490µA	125 nC @ 10 V	8220 pF @ 40 V	±20V	-	5W (Ta), 258W (Tc)	1.4mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
R8008ANJFRGTL	Rohm Semiconductor	MOSFET N-CH 800V 8A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	5V @ 1mA	38 nC @ 10 V	1100 pF @ 25 V	±30V	-	195W (Tc)	1.03Ohm @ 4A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
XP1504YT	YAGEO XSEMI	MOSFET N-CH 150V 5A 15.8A PMPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 984 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.12W (Ta), 31.2W (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PMPAK® 3 x 3 Package / Case: 8-PowerDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	150 V	5A (Ta), 15.8A (Tc)	10V	4V @ 250µA	25.6 nC @ 10 V	984 pF @ 100 V	±20V	-	3.12W (Ta), 31.2W (Tc)	59mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PMPAK® 3 x 3	8-PowerDFN