Page 1344 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3711ZCSTRLP
Infineon Technologies

MOSFET N-CH 20V 92A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,376
SPI80N06S-08
Infineon Technologies

MOSFET N-CH 55V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,576
SUD50N025-06P-E3
Vishay Siliconix

MOSFET N-CH 25V 78A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock41,520
SI4660DY-T1-E3
Vishay Siliconix

MOSFET N-CH 25V 23.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock65,232
SFU9220TU_F080
Fairchild/ON Semiconductor

MOSFET P-CH 200V 3.1A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,152
NTD4865N-1G
ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,160
AO6414
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 55V 2.3A 6-TSOP

Package: SC-74, SOT-457

Stock109,404
PH8030L,115
NXP

MOSFET N-CH 30V 76.7A LFPAK

Package: SC-100, SOT-669

Stock35,976
ZXMN10A11K
Diodes Incorporated

MOSFET N-CH 100V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock47,412
PSMN3R7-30YLC,115
NXP

MOSFET N-CH 30V 100A LFPAK

Package: SC-100, SOT-669

Stock7,328
IXTK20N150
IXYS

MOSFET N-CH 1500V 20A TO-264

Package: TO-264-3, TO-264AA

Stock3,584
IRFR224TRLPBF
Vishay Siliconix

MOSFET N-CH 250V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock24,000
AOB409L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 5A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock31,032
SI4178DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,417,428
DMT5015LFDF-13
Diodes Incorporated

MOSFET N-CH 50V 9.1A 6DFN

Package: 6-UDFN Exposed Pad

Stock4,208
MCH3484-TL-W
ON Semiconductor

MOSFET N-CH 20V 4.5A MCPH3

Package: 3-SMD, Flat Leads

Stock3,360
IXFT42N50P2
IXYS

MOSFET N-CH 500V 42A TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,792
DMP6023LFG-7
Diodes Incorporated

MOSFET P-CH 60V 7.7A POWERDI3333

Package: 8-PowerWDFN

Stock3,056
APT10090BLLG
Microsemi Corporation

MOSFET N-CH 1000V 12A TO-247

Package: TO-247-3

Stock28,800
DMP6110SVT-13
Diodes Incorporated

MOSFET P-CH 60V TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock4,080

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3711ZCSTRLP	Infineon Technologies	MOSFET N-CH 20V 92A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,376	MOSFET (Metal Oxide)	20V	92A (Tc)	4.5V, 10V	2.45V @ 250µA	24nC @ 4.5V	2150pF @ 10V	±20V	-	79W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPI80N06S-08	Infineon Technologies	MOSFET N-CH 55V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,576	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 240µA	187nC @ 10V	3660pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SUD50N025-06P-E3	Vishay Siliconix	MOSFET N-CH 25V 78A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10.7W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock41,520	MOSFET (Metal Oxide)	25V	78A (Tc)	4.5V, 10V	2.4V @ 250µA	66nC @ 10V	2490pF @ 12V	±20V	-	10.7W (Ta), 65W (Tc)	6.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4660DY-T1-E3	Vishay Siliconix	MOSFET N-CH 25V 23.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock65,232	MOSFET (Metal Oxide)	25V	23.1A (Tc)	4.5V, 10V	2.2V @ 250µA	45nC @ 10V	2410pF @ 15V	±16V	-	3.1W (Ta), 5.6W (Tc)	5.8 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SFU9220TU_F080	Fairchild/ON Semiconductor	MOSFET P-CH 200V 3.1A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,152	MOSFET (Metal Oxide)	200V	3.1A (Tc)	10V	4V @ 250µA	19nC @ 10V	540pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	1.5 Ohm @ 1.6A, 10V	-	Through Hole	TO-251-3	TO-251-3 Short Leads, IPak, TO-251AA
NTD4865N-1G	ON Semiconductor	MOSFET N-CH 25V 8.5A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc) Rds On (Max) @ Id, Vgs: 10.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,160	MOSFET (Metal Oxide)	25V	8.5A (Ta), 44A (Tc)	4.5V, 10V	2.5V @ 250µA	10.8nC @ 4.5V	827pF @ 12V	±20V	-	1.27W (Ta), 33.3W (Tc)	10.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
AO6414	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 55V 2.3A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock109,404	MOSFET (Metal Oxide)	55V	2.3A (Ta)	2.5V, 4.5V	2V @ 250µA	3.3nC @ 4.5V	300pF @ 25V	±12V	-	1.56W (Ta)	160 mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
PH8030L,115	NXP	MOSFET N-CH 30V 76.7A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock35,976	MOSFET (Metal Oxide)	30V	76.7A (Tc)	4.5V, 10V	2.15V @ 1mA	15.2nC @ 4.5V	2260pF @ 12V	±20V	-	62.5W (Tc)	5.9 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
ZXMN10A11K	Diodes Incorporated	MOSFET N-CH 100V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.11W (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock47,412	MOSFET (Metal Oxide)	100V	2.4A (Ta)	6V, 10V	4V @ 250µA	5.4nC @ 10V	274pF @ 50V	±20V	-	2.11W (Ta)	350 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN3R7-30YLC,115	NXP	MOSFET N-CH 30V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1848pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 3.95 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock7,328	MOSFET (Metal Oxide)	30V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	29nC @ 10V	1848pF @ 15V	±20V	-	79W (Tc)	3.95 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IXTK20N150	IXYS	MOSFET N-CH 1500V 20A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,584	MOSFET (Metal Oxide)	1500V	20A (Tc)	10V	4.5V @ 1mA	215nC @ 10V	7800pF @ 25V	±30V	-	1250W (Tc)	1 Ohm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IRFR224TRLPBF	Vishay Siliconix	MOSFET N-CH 250V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24,000	MOSFET (Metal Oxide)	250V	3.8A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.1 Ohm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOB409L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 60V 5A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 31.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock31,032	MOSFET (Metal Oxide)	60V	5A (Ta), 31.5A (Tc)	4.5V, 10V	2.4V @ 250µA	52nC @ 10V	2953pF @ 30V	±20V	-	2.1W (Ta), 83.3W (Tc)	38 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4178DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 12A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,417,428	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.8V @ 250µA	12nC @ 10V	405pF @ 15V	±25V	-	2.4W (Ta), 5W (Tc)	21 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMT5015LFDF-13	Diodes Incorporated	MOSFET N-CH 50V 9.1A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 902.7pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 820mW (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN2020 (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,208	MOSFET (Metal Oxide)	50V	9.1A (Ta)	4.5V, 10V	2V @ 250µA	14nC @ 10V	902.7pF @ 25V	±16V	-	820mW (Ta)	15 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN2020 (2x2)	6-UDFN Exposed Pad
MCH3484-TL-W	ON Semiconductor	MOSFET N-CH 20V 4.5A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 2.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 2A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock3,360	MOSFET (Metal Oxide)	20V	4.5A (Ta)	0.9V, 2.5V	800mV @ 1mA	11nC @ 2.5V	630pF @ 10V	±5V	-	1W (Ta)	40 mOhm @ 2A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
IXFT42N50P2	IXYS	MOSFET N-CH 500V 42A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 830W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,792	MOSFET (Metal Oxide)	500V	42A (Tc)	10V	4.5V @ 4mA	92nC @ 10V	5300pF @ 25V	±30V	-	830W (Tc)	145 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
DMP6023LFG-7	Diodes Incorporated	MOSFET P-CH 60V 7.7A POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock3,056	MOSFET (Metal Oxide)	60V	7.7A (Ta)	4.5V, 10V	3V @ 250µA	53.1nC @ 10V	2569pF @ 30V	±20V	-	1W (Ta)	25 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
APT10090BLLG	Microsemi Corporation	MOSFET N-CH 1000V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: TO-247-3	Stock28,800	MOSFET (Metal Oxide)	1000V	12A (Tc)	10V	5V @ 1mA	71nC @ 10V	1969pF @ 25V	±30V	-	298W (Tc)	950 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
DMP6110SVT-13	Diodes Incorporated	MOSFET P-CH 60V TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock4,080	MOSFET (Metal Oxide)	60V	7.3A (Tc)	4.5V, 10V	3V @ 250µA	17.2nC @ 10V	969pF @ 30V	±20V	-	1.2W (Ta)	105 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
STP36NF06	STMicroelectronics	MOSFET N-CH 60V 30A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock650,316	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	31nC @ 10V	690pF @ 25V	±20V	-	70W (Tc)	40 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMFS4C13NT1G	ON Semiconductor	MOSFET N-CH 30V 38A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock17,232	MOSFET (Metal Oxide)	30V	7.2A (Ta), 38A (Tc)	4.5V, 10V	2.1V @ 250µA	15.2nC @ 10V	770pF @ 15V	±20V	-	750mW (Ta)	9.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IRF5305SPBF	Infineon Technologies	MOSFET P-CH 55V 31A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock104,148	MOSFET (Metal Oxide)	55V	31A (Tc)	10V	4V @ 250µA	63nC @ 10V	1200pF @ 25V	±20V	-	3.8W (Ta), 110W (Tc)	60 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSB028N06NN3GXUMA1	Infineon Technologies	MOSFET N-CH 60V 22A/90A 2WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 102µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M™ Package / Case: 3-WDSON	Package: -	Stock45,039	MOSFET (Metal Oxide)	60 V	22A (Ta), 90A (Tc)	10V	4V @ 102µA	143 nC @ 10 V	12000 pF @ 30 V	±20V	-	2.2W (Ta), 78W (Tc)	2.8mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M™	3-WDSON
IPP050N10NF2SAKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 84µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	19.4A (Ta), 110A (Tc)	6V, 10V	3.8V @ 84µA	76 nC @ 10 V	3600 pF @ 50 V	±20V	-	3.8W (Ta), 150W (Tc)	5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPC95R450P7X7SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCB60I1200TZ	IXYS	1200V 90A SIC POWER MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268AA (D3Pak-HV) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	4V @ 15mA	160 nC @ 20 V	2790 pF @ 1000 V	+20V, -5V	-	-	34mOhm @ 50A, 20V	-40°C ~ 175°C (TJ)	Surface Mount	TO-268AA (D3Pak-HV)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SIR873DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 150V 37A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	37A (Tc)	10V	4V @ 250µA	48 nC @ 10 V	1805 pF @ 75 V	±20V	-	104W (Tc)	47.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8