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Infineon Technologies |
MOSFET N-CH 20V 180A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,976 |
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MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 3V @ 250µA | 79nC @ 4.5V | 5090pF @ 10V | ±20V | - | 210W (Tc) | 4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock233,988 |
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MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | ±20V | - | 43W (Tc) | 600 mOhm @ 2.9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 50V 70MA SSFP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-SSFP
- Package / Case: 3-SMD, Flat Leads
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Package: 3-SMD, Flat Leads |
Stock3,120 |
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MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 150mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Surface Mount | 3-SSFP | 3-SMD, Flat Leads |
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IXYS |
MOSFET N-CH 170V 210A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock4,256 |
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MOSFET (Metal Oxide) | 170V | 210A (Tc) | 10V | 5V @ 4mA | 285nC @ 10V | 18800pF @ 25V | ±20V | - | 1150W (Tc) | 7.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
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ON Semiconductor |
MOSFET P-CH 30V 2.6A 6-TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
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Package: SOT-23-6 |
Stock434,568 |
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MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 32nC @ 10V | 750pF @ 15V | ±20V | - | 630mW (Ta) | 60 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,800 |
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MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 450V 8.8A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock390,000 |
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MOSFET (Metal Oxide) | 450V | 8.8A (Tc) | 10V | 4V @ 250µA | 80nC @ 10V | 1400pF @ 25V | ±20V | - | 125W (Tc) | 630 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock229,632 |
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MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | ±20V | - | 74W (Tc) | 2.2 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.72mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 20.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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Package: TO-247-4 |
Stock7,024 |
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MOSFET (Metal Oxide) | 600V | 53.5A (Tc) | 10V | 4.5V @ 1.72mA | 100nC @ 10V | 4750pF @ 100V | ±20V | - | 391W (Tc) | 70 mOhm @ 20.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 75V 170A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,320 |
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MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | ±20V | - | 310W (Tc) | 4.5 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 18A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 340 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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Package: ISOPLUS247? |
Stock7,584 |
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MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 6.5V @ 1mA | 225nC @ 10V | 14200pF @ 25V | ±30V | - | 320W (Tc) | 340 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
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ON Semiconductor |
MOSFET N-CH 60V SO8FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock5,024 |
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MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 2V @ 135µA | 52nC @ 10V | 3600pF @ 25V | ±20V | - | 3.7W (Ta), 110W (Tc) | 2.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 12V 9A MCPH6
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 6V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 4.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
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Package: 6-SMD, Flat Leads |
Stock3,344 |
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MOSFET (Metal Oxide) | 12V | 9A (Ta) | 1.5V, 4.5V | - | 20.5nC @ 4.5V | 2200pF @ 6V | ±10V | - | 1.5W (Ta) | 16.9 mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
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Nexperia USA Inc. |
MOSFET P-CH 20V SC-74
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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Package: SC-74, SOT-457 |
Stock3,824 |
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MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 23nC @ 4.5V | 1820pF @ 10V | ±8V | - | 500mW (Ta), 8.33W (Tc) | 43 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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STMicroelectronics |
MOSFET N-CH 650V 18A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1434pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,408 |
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MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 5V @ 250µA | 36nC @ 10V | 1434pF @ 100V | ±25V | - | 130W (Tc) | 190 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 6.2A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.7A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock19,476 |
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MOSFET (Metal Oxide) | 200V | 6.2A (Tc) | 4V, 5V | 2V @ 250µA | 40nC @ 10V | 1100pF @ 25V | ±10V | - | 35W (Tc) | 400 mOhm @ 3.7A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Comchip Technology |
MOSFET N-CH 60V 0.25A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,920 |
|
MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 1nC @ 10V | 25pF @ 25V | - | - | 350mW (Ta) | 3 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia USA Inc. |
MOSFET N-CH 100V 15A LFPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 779pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 102 mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
|
Package: SC-100, SOT-669 |
Stock14,148 |
|
MOSFET (Metal Oxide) | 100V | 15A (Tc) | 10V | 4V @ 1mA | 12.2nC @ 10V | 779pF @ 25V | ±20V | - | 60W (Tc) | 102 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Diodes Incorporated |
MOSFET P CH 20V 4.3A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 216pF @ 15V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock345,990 |
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MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 1.8V, 10V | 1.4V @ 250µA | 9.1nC @ 4.5V | 216pF @ 15V | ±10V | - | 800mW (Ta) | 38 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 3.4A SOT23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.6A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock28,266 |
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MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 3.8nC @ 4.5V | 292pF @ 10V | ±12V | - | 760mW (Ta) | 72 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET P-CH 100V 52A TO-3P
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2845pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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Package: TO-3P-3, SC-65-3 |
Stock20,274 |
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MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 4.5V @ 250µA | 60nC @ 10V | 2845pF @ 25V | ±20V | - | 300W (Tc) | 50 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Taiwan Semiconductor Corporation |
30V, 124A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.6W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 22A (Ta), 124A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 10 V | 2530 pF @ 15 V | ±20V | - | 2.6W (Ta), 83W (Tc) | 3.6mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 4V @ 250µA | 14 nC @ 10 V | 229 pF @ 25 V | ±30V | - | 36W (Tc) | 7Ohm @ 840mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 30V 115MA SOT523
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 5 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 240mW (Ta)
- Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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Package: - |
Stock30,000 |
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MOSFET (Metal Oxide) | 30 V | 115mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | 0.55 nC @ 10 V | 48 pF @ 5 V | ±20V | - | 240mW (Ta) | 5Ohm @ 10mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 8A/35A 8PDFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5.2x5.75)
- Package / Case: 8-PowerLDFN
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Package: - |
Stock9,537 |
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MOSFET (Metal Oxide) | 60 V | 8A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 10 V | 1314 pF @ 30 V | ±20V | - | 3.1W (Ta), 68W (Tc) | 22mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5.2x5.75) | 8-PowerLDFN |
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onsemi |
MOSFET N-CH 500V 13A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2055 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 4V @ 250µA | 56 nC @ 10 V | 2055 pF @ 25 V | ±30V | - | 195W (Tc) | 480mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Micro Commercial Co |
MOSFET P-CH 20V 8.2A 8TSSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.05W
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 8.2A (Tj) | 1.8V, 4.5V | 900mV @ 250µA | 29 nC @ 10 V | 1255 pF @ 10 V | ±8V | - | 1.05W | 8.5mOhm @ 4.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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onsemi |
MOSFET N-CH 40V 30A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tj)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerVDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 10V | 3V @ 250µA | 28 nC @ 10 V | 1210 pF @ 20 V | ±20V | - | 50W (Tj) | 7mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerVDFN |
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