Page 1341 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS127L6327HTSA1
Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,904
IRLR3705Z
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,360
SCH1331-S-TL-H
ON Semiconductor

MOSFET P-CH 12V 3A SCH6

Package: SOT-563, SOT-666

Stock108,540
SI6413DQ-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 7.2A 8TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock24,540
APTM20SKM10TG
Microsemi Corporation

MOSFET N-CH 200V 175A SP4

Package: SP4

Stock5,024
FDR842P
Fairchild/ON Semiconductor

MOSFET P-CH 12V 11A SSOT-8

Package: 8-SMD, Gull Wing

Stock2,208
FQP1N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 1.4A TO-220

Package: TO-220-3

Stock7,168
IPB80N04S4L04ATMA1
Infineon Technologies

MOSFET N-CH 40V 80A TO263-3-2

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,312
BSC018NE2LSATMA1
Infineon Technologies

MOSFET N-CH 25V 100A TDSON-8

Package: 8-PowerTDFN

Stock4,480
IXFR9N80Q
IXYS

MOSFET N-CH 800V ISOPLUS247

Package: ISOPLUS247?

Stock6,512
FDP047AN08A0_F102
Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-220AB-3

Package: TO-220-3

Stock3,504
5LN01SS-TL-H
ON Semiconductor

MOSFET N-CH 50V 100MA SSFP

Package: 3-SMD, Flat Leads

Stock311,760
SIHB24N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,968
STW9N80K5
STMicroelectronics

MOSFET N-CH 800V 7A TO247

Package: TO-247-3

Stock2,928
RSD201N10TL
Rohm Semiconductor

MOSFET N-CH 100V 20A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,392
RQ3L050GNTB
Rohm Semiconductor

NCH 60V 12A MIDDLE POWER MOSFET

Package: 8-PowerVDFN

Stock5,808
CPH6445-TL-W
ON Semiconductor

MOSFET N-CH 60V 3.5A CPH6

Package: SOT-23-6

Stock46,590
IRFU014PBF
Vishay Siliconix

MOSFET N-CH 60V 7.7A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock177,168
IPD088N06N3 G
Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock202,260
UJ4C075060K3S
Qorvo

SICFET N-CH 750V 28A TO247-3

Package: -

Stock43,671

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS127L6327HTSA1	Infineon Technologies	MOSFET N-CH 600V 0.021A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,904	MOSFET (Metal Oxide)	600V	21mA (Ta)	4.5V, 10V	2.6V @ 8µA	1nC @ 10V	28pF @ 25V	±20V	-	500mW (Ta)	500 Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRLR3705Z	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,360	MOSFET (Metal Oxide)	55V	42A (Tc)	4.5V, 10V	3V @ 250µA	66nC @ 5V	2900pF @ 25V	±16V	-	130W (Tc)	8 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SCH1331-S-TL-H	ON Semiconductor	MOSFET P-CH 12V 3A SCH6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock108,540	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	6-SCH	SOT-563, SOT-666
SI6413DQ-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 7.2A 8TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.05W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock24,540	MOSFET (Metal Oxide)	20V	7.2A (Ta)	1.8V, 4.5V	800mV @ 400µA	105nC @ 5V	-	±8V	-	1.05W (Ta)	10 mOhm @ 8.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
APTM20SKM10TG	Microsemi Corporation	MOSFET N-CH 200V 175A SP4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	Package: SP4	Stock5,024	MOSFET (Metal Oxide)	200V	175A	10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	±30V	-	694W (Tc)	12 mOhm @ 87.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FDR842P	Fairchild/ON Semiconductor	MOSFET P-CH 12V 11A SSOT-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5350pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 11A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-8 Package / Case: 8-SMD, Gull Wing	Package: 8-SMD, Gull Wing	Stock2,208	MOSFET (Metal Oxide)	12V	11A (Ta)	1.8V, 4.5V	1.5V @ 250µA	80nC @ 4.5V	5350pF @ 6V	±8V	-	1.8W (Ta)	9 mOhm @ 11A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-8	8-SMD, Gull Wing
FQP1N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 1.4A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 9 Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,168	MOSFET (Metal Oxide)	500V	1.4A (Tc)	10V	5V @ 250µA	5.5nC @ 10V	150pF @ 25V	±30V	-	40W (Tc)	9 Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPB80N04S4L04ATMA1	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4690pF @ 25V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,312	MOSFET (Metal Oxide)	40V	80A (Tc)	4.5V, 10V	2.2V @ 35µA	60nC @ 10V	4690pF @ 25V	+20V, -16V	-	71W (Tc)	4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC018NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,480	MOSFET (Metal Oxide)	25V	29A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	39nC @ 10V	2800pF @ 12V	±20V	-	2.5W (Ta), 69W (Tc)	1.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IXFR9N80Q	IXYS	MOSFET N-CH 800V ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock6,512	MOSFET (Metal Oxide)	800V	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
FDP047AN08A0_F102	Fairchild/ON Semiconductor	MOSFET N-CH 75V 80A TO-220AB-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock3,504	MOSFET (Metal Oxide)	75V	-	6V, 10V	-	-	-	±20V	-	310W (Tc)	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
5LN01SS-TL-H	ON Semiconductor	MOSFET N-CH 50V 100MA SSFP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-SSFP Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock311,760	MOSFET (Metal Oxide)	50V	100mA (Ta)	1.5V, 4V	-	1.57nC @ 10V	6.6pF @ 10V	±10V	-	150mW (Ta)	7.8 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	3-SSFP	3-SMD, Flat Leads
SIHB24N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 156 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,968	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2774pF @ 100V	±30V	-	250W (Tc)	156 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STW9N80K5	STMicroelectronics	MOSFET N-CH 800V 7A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock2,928	MOSFET (Metal Oxide)	800V	7A (Tc)	10V	5V @ 100µA	12nC @ 10V	340pF @ 100V	±30V	-	110W (Tc)	900 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
RSD201N10TL	Rohm Semiconductor	MOSFET N-CH 100V 20A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,392	MOSFET (Metal Oxide)	100V	20A (Tc)	4V, 10V	2.5V @ 1mA	55nC @ 10V	2100pF @ 25V	±20V	-	850mW (Ta), 20W (Tc)	46 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
RQ3L050GNTB	Rohm Semiconductor	NCH 60V 12A MIDDLE POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 14.8W (Tc) Rds On (Max) @ Id, Vgs: 61 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,808	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	2.5V @ 25µA	2.8nC @ 4.5V	300pF @ 30V	±20V	-	14.8W (Tc)	61 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
CPH6445-TL-W	ON Semiconductor	MOSFET N-CH 60V 3.5A CPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 117 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6	Package: SOT-23-6	Stock46,590	MOSFET (Metal Oxide)	60V	3.5A (Ta)	4V, 10V	-	6.8nC @ 10V	310pF @ 20V	±20V	-	1.6W (Ta)	117 mOhm @ 1.5A, 10V	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6
IRFU014PBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock177,168	MOSFET (Metal Oxide)	60V	7.7A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	200 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IPD088N06N3 G	Infineon Technologies	MOSFET N-CH 60V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock202,260	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 34µA	48nC @ 10V	3900pF @ 30V	±20V	-	71W (Tc)	8.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
UJ4C075060K3S	Qorvo	SICFET N-CH 750V 28A TO247-3 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 155W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock43,671	SiCFET (Cascode SiCJFET)	750 V	28A (Tc)	-	6V @ 10mA	37.8 nC @ 15 V	1422 pF @ 100 V	±20V	-	155W (Tc)	74mOhm @ 20A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRF7809AVTRPBF-1	Infineon Technologies	MOSFET N-CH 30V 13.3A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 16 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	13.3A (Ta)	4.5V	1V @ 250µA	62 nC @ 5 V	3780 pF @ 16 V	±12V	-	2.5W (Ta)	9mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI2306A	UMW	30V 3.5A 1.25W 57MR@10V,3.5A 3V@ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,520	MOSFET (Metal Oxide)	30 V	4A (Ta)	4.5V, 10V	3V @ 250µA	7 nC @ 5 V	555 pF @ 15 V	±20V	-	1.25W (Ta)	35mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BUZ111SLE3045A	Siemens	MOSFET N-CH 50V 80A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 300W Rds On (Max) @ Id, Vgs: - Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	80A	-	-	-	-	-	-	300W	-	175°C	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQJ414EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 30V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	2.5V @ 250µA	25 nC @ 10 V	1110 pF @ 15 V	±20V	-	45W (Tc)	12mOhm @ 4.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
AIMZA75R060M1HXKSA1	Infineon Technologies	AUTOMOTIVE_SICMOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MGSF3441VT1	onsemi	P-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002-7-G	Diodes Incorporated	MOSFET N-CH 60V SOT23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA2R4N120P-TRL	IXYS	MOSFET N-CH 1200V 2.4A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1207 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	2.4A (Tc)	10V	4.5V @ 250µA	37 nC @ 10 V	1207 pF @ 25 V	±30V	-	125W (Tc)	7.5Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB