Page 1348 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3709STRR
Infineon Technologies

MOSFET N-CH 30V 90A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,584
AOT502
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 33V 9A TO220

Package: TO-220-3

Stock12,948
IXFC80N08
IXYS

MOSFET N-CH 80V 80A ISOPLUS220

Package: ISOPLUS220?

Stock5,104
HUFA76409P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 18A TO-220AB

Package: TO-220-3

Stock4,544
ZVP2110ASTOA
Diodes Incorporated

MOSFET P-CH 100V 0.23A TO92-3

Package: E-Line-3

Stock7,888
STB11NM60N-1
STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,816
IXTP120N075T2
IXYS

MOSFET N-CH 75V 120A TO-220

Package: TO-220-3

Stock7,600
TK5A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 4.5A TO-220SIS

Package: TO-220-3 Full Pack

Stock3,248
RDD020N50TL
Rohm Semiconductor

MOSFET N-CH 500V 2A CPT3

Package: -

Stock4,016
STL34N65M5
STMicroelectronics

MOSFET N-CH 650V 3.2A PWRFLAT88

Package: 4-PowerFlat? HV

Stock2,000
TK30E06N1,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 43A TO-220

Package: TO-220-3

Stock6,112
IPB010N06NATMA1
Infineon Technologies

MOSFET N-CH 60V 45A TO263-7

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock6,032
STF5N52K3
STMicroelectronics

MOSFET N-CH 525V 4.4A TO-220FP

Package: TO-220-3 Full Pack

Stock6,000
SSM3J35MFV,L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.1A VESM

Package: SOT-723

Stock160,662
SIJ478DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock29,874
IRLML0040TRPBF
Infineon Technologies

MOSFET N-CH 40V 3.6A SOT-23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,949,316
SUD50P06-15-GE3
Vishay Siliconix

MOSFET P-CH 60V 50A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock31,344
IMYH200R050M1HXKSA1
Infineon Technologies

SIC DISCRETE

Package: -

Stock666
2N7002A-AQ
Diotec Semiconductor

IC

Package: -

Request a Quote
RJK0301DPB-WS-J0
Renesas Electronics Corporation

MOSFET N-CH 30V 60A 5LFPAK

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3709STRR	Infineon Technologies	MOSFET N-CH 30V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,584	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	±20V	-	3.1W (Ta), 120W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOT502	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 33V 9A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.9W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock12,948	MOSFET (Metal Oxide)	33V	9A (Ta), 60A (Tc)	10V	2.7V @ 250µA	28nC @ 10V	1450pF @ 15V	-	-	1.9W (Ta), 79W (Tc)	11.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IXFC80N08	IXYS	MOSFET N-CH 80V 80A ISOPLUS220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS220? Package / Case: ISOPLUS220?	Package: ISOPLUS220?	Stock5,104	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4V @ 4mA	180nC @ 10V	4800pF @ 25V	±20V	-	230W (Tc)	11 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS220?	ISOPLUS220?
HUFA76409P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 18A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,544	MOSFET (Metal Oxide)	60V	18A (Tc)	4.5V, 10V	3V @ 250µA	15nC @ 10V	485pF @ 25V	±16V	-	49W (Tc)	62 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVP2110ASTOA	Diodes Incorporated	MOSFET P-CH 100V 0.23A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,888	MOSFET (Metal Oxide)	100V	230mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	8 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
STB11NM60N-1	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,816	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	31nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	450 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IXTP120N075T2	IXYS	MOSFET N-CH 75V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,600	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	4V @ 250µA	78nC @ 10V	4740pF @ 25V	±20V	-	250W (Tc)	7.7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
TK5A65DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 4.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.67 Ohm @ 2.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,248	MOSFET (Metal Oxide)	650V	4.5A (Ta)	10V	4.4V @ 1mA	16nC @ 10V	700pF @ 25V	±30V	-	35W (Tc)	1.67 Ohm @ 2.3A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
RDD020N50TL	Rohm Semiconductor	MOSFET N-CH 500V 2A CPT3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,016	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STL34N65M5	STMicroelectronics	MOSFET N-CH 650V 3.2A PWRFLAT88 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock2,000	MOSFET (Metal Oxide)	650V	22.5A (Tc)	10V	5V @ 250µA	62.5nC @ 10V	2700pF @ 100V	±25V	-	2.8W (Ta), 150W (Tc)	120 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
TK30E06N1,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 43A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,112	MOSFET (Metal Oxide)	60V	43A (Ta)	10V	4V @ 200µA	16nC @ 10V	1050pF @ 30V	±20V	-	53W (Tc)	15 mOhm @ 15A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
IPB010N06NATMA1	Infineon Technologies	MOSFET N-CH 60V 45A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 208nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock6,032	MOSFET (Metal Oxide)	60V	45A (Ta), 180A (Tc)	6V, 10V	4V @ 280µA	208nC @ 10V	15000pF @ 30V	±20V	-	300W (Tc)	1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab)
STF5N52K3	STMicroelectronics	MOSFET N-CH 525V 4.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,000	MOSFET (Metal Oxide)	525V	4.4A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	545pF @ 100V	±30V	-	25W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SSM3J35MFV,L3F	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 0.1A VESM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Vgs (Max): - FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	Package: SOT-723	Stock160,662	MOSFET (Metal Oxide)	20V	100mA (Ta)	-	-	-	12.2pF @ 3V	-	-	150mW (Ta)	8 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	VESM	SOT-723
SIJ478DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 80V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1855pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock29,874	MOSFET (Metal Oxide)	80V	60A (Tc)	4.5V, 10V	2.6V @ 250µA	54nC @ 10V	1855pF @ 40V	±20V	-	5W (Ta), 62.5W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRLML0040TRPBF	Infineon Technologies	MOSFET N-CH 40V 3.6A SOT-23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 266pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 56 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro3?/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,949,316	MOSFET (Metal Oxide)	40V	3.6A (Ta)	4.5V, 10V	2.5V @ 25µA	3.9nC @ 4.5V	266pF @ 25V	±16V	-	1.3W (Ta)	56 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro3?/SOT-23	TO-236-3, SC-59, SOT-23-3
SUD50P06-15-GE3	Vishay Siliconix	MOSFET P-CH 60V 50A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 113W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock31,344	MOSFET (Metal Oxide)	60V	50A (Tc)	4.5V, 10V	3V @ 250µA	165nC @ 10V	4950pF @ 25V	±20V	-	2.5W (Ta), 113W (Tc)	15 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IMYH200R050M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 2000 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.5V @ 12.1mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +20V, -7V FET Feature: - Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-U04 Package / Case: TO-247-4	Package: -	Stock666	SiC (Silicon Carbide Junction Transistor)	2000 V	48A (Tc)	15V, 18V	5.5V @ 12.1mA	82 nC @ 18 V	-	+20V, -7V	-	348W (Tc)	64mOhm @ 20A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-U04	TO-247-4
2N7002A-AQ	Diotec Semiconductor	IC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	280mA (Ta)	5V, 10V	2.5V @ 250µA	-	50 pF @ 25 V	±30V	-	350mW (Ta)	2Ohm @ 500mA, 10V	150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
RJK0301DPB-WS-J0	Renesas Electronics Corporation	MOSFET N-CH 30V 60A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	60A (Ta)	4.5V, 10V	2.5V @ 1mA	32 nC @ 10 V	5000 pF @ 10 V	+16V, -12V	-	65W (Tc)	2.8mOhm @ 30A, 10V	150°C	Surface Mount	LFPAK	SC-100, SOT-669
APT5024SLLG-TR	Microchip Technology	MOSFET N-CH 500V 22A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 265W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	5V @ 1mA	43 nC @ 10 V	1900 pF @ 25 V	±30V	-	265W (Tc)	240mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
UPA2709AGR-E1-AT	Renesas Electronics Corporation	MOSFET N-CH 30V 13A 8PSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10.5mOhm @ 7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PSOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	13A (Ta)	-	2.5V @ 1mA	11 nC @ 5 V	1270 pF @ 10 V	-	-	-	10.5mOhm @ 7A, 10V	-	Surface Mount	8-PSOP	8-SOIC (0.173", 4.40mm Width)
IPB200N15N3GATMA1	Infineon Technologies	MOSFET N-CH 150V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,232	MOSFET (Metal Oxide)	150 V	50A (Tc)	8V, 10V	4V @ 90µA	31 nC @ 10 V	1820 pF @ 75 V	±20V	-	150W (Tc)	20mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA3N100D2HV-TRL	IXYS	MOSFET N-CH 1000V 3A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	3A (Tj)	0V	4.5V @ 250µA	37.5 nC @ 5 V	1020 pF @ 25 V	±20V	Depletion Mode	125W (Tc)	6Ohm @ 1.5A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MCQ4407A-TP	Micro Commercial Co	MOSFET P-CH FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A	4.5V, 10V	3V @ 250µA	24 nC @ 10 V	1750 pF @ 15 V	±20V	-	3W	15mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FDMS5361L-F085	Fairchild Semiconductor	FDMS5361 - N-CHANNEL POWERTRENCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	35A (Tc)	4.5V, 10V	3V @ 250µA	44 nC @ 10 V	1980 pF @ 25 V	±20V	-	75W (Tc)	15mOhm @ 16.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerVDFN
NTMFS4C910NAT1G	onsemi	TRENCH 6 30V NCH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock22,500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC40SM120JCU3	Microchip Technology	SICFET N-CH 1.2KV 55A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Package: -	Stock129	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	20V	2.7V @ 1mA	137 nC @ 20 V	1990 pF @ 1000 V	+25V, -10V	-	245W (Tc)	50mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC