Page 1351 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BTS282Z E3230
Infineon Technologies

MOSFET N-CH 49V 80A TO220-7

Package: TO-220-7

Stock5,072
IRF7809TR
Infineon Technologies

MOSFET N-CH 30V 17.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,568
IRLL3303TR
Infineon Technologies

MOSFET N-CH 30V 4.6A SOT223

Package: TO-261-4, TO-261AA

Stock317,052
APT38N60SC6
Microsemi Corporation

MOSFET N-CH 600V 38A D3PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,144
RDN120N25FU6
Rohm Semiconductor

MOSFET N-CH 250V 12A TO-220FN

Package: TO-220-3 Full Pack

Stock4,080
HUF75925D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 200V 11A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock445,692
NTA4001NT1
ON Semiconductor

MOSFET N-CH 20V 0.238A SOT-416

Package: SC-75, SOT-416

Stock1,106,016
STL7NM60N
STMicroelectronics

MOSFET N-CH 600V 5.8A POWERFLAT

Package: 14-PowerVQFN

Stock4,560
IXFR58N20
IXYS

MOSFET N-CH 200V 50A ISOPLUS247

Package: ISOPLUS247?

Stock7,632
SI7194DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 60A PPAK SO-8

Package: PowerPAK? SO-8

Stock7,968
STB5NK50Z-1
STMicroelectronics

MOSFET N-CH 500V 4.4A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock252,000
IRF7424PBF
Infineon Technologies

MOSFET P-CH 30V 11A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,352
BSZ120P03NS3GATMA1
Infineon Technologies

MOSFET P-CH 30V 40A TSDSON-8

Package: 8-PowerTDFN

Stock7,616
STF30N10F7
STMicroelectronics

MOSFET N-CH 100V 35A TO-220FP

Package: TO-220-3 Full Pack

Stock5,792
IPLU300N04S41R1XTMA1
Infineon Technologies

MOSFET N-CH 8HSOF

Package: 8-PowerSFN

Stock20,010
SI2337DS-T1-E3
Vishay Siliconix

MOSFET P-CH 80V 2.2A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock237,240
STB42N65M5
STMicroelectronics

MOSFET N-CH 650V 33A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,588
SIHF068N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 16A TO220

Package: -

Stock2,019
CPH3307-TL-E
Sanyo

MOSFET P-CH

Package: -

Request a Quote
PSMNR90-40YSNX
Nexperia USA Inc.

PSMNR90-40YSN/SOT669/LFPAK

Package: -

Stock4,500

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BTS282Z E3230	Infineon Technologies	MOSFET N-CH 49V 80A TO220-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 49V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 36A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-7-230 Package / Case: TO-220-7	Package: TO-220-7	Stock5,072	MOSFET (Metal Oxide)	49V	80A (Tc)	4.5V, 10V	2V @ 240µA	232nC @ 10V	4800pF @ 25V	±20V	Temperature Sensing Diode	300W (Tc)	6.5 mOhm @ 36A, 10V	-40°C ~ 175°C (TJ)	Through Hole	PG-TO220-7-230	TO-220-7
IRF7809TR	Infineon Technologies	MOSFET N-CH 30V 17.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 16V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,568	MOSFET (Metal Oxide)	30V	17.6A (Ta)	4.5V	1V @ 250µA	86nC @ 5V	7300pF @ 16V	±12V	-	3.5W (Ta)	7.5 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLL3303TR	Infineon Technologies	MOSFET N-CH 30V 4.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock317,052	MOSFET (Metal Oxide)	30V	4.6A (Ta)	4.5V, 10V	1V @ 250µA	50nC @ 10V	840pF @ 25V	±16V	-	1W (Ta)	31 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
APT38N60SC6	Microsemi Corporation	MOSFET N-CH 600V 38A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,144	MOSFET (Metal Oxide)	600V	38A (Tc)	10V	3.5V @ 1.2mA	112nC @ 10V	2826pF @ 25V	±20V	-	278W (Tc)	99 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RDN120N25FU6	Rohm Semiconductor	MOSFET N-CH 250V 12A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,080	MOSFET (Metal Oxide)	250V	12A (Ta)	10V	4V @ 1mA	62nC @ 10V	1224pF @ 10V	±30V	-	40W (Tc)	210 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
HUF75925D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 200V 11A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 275 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock445,692	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	78nC @ 20V	1030pF @ 25V	±20V	-	100W (Tc)	275 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
NTA4001NT1	ON Semiconductor	MOSFET N-CH 20V 0.238A SOT-416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 238mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 300mW (Tj) Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75, SOT-416 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock1,106,016	MOSFET (Metal Oxide)	20V	238mA (Tj)	2.5V, 4.5V	1.5V @ 100µA	-	20pF @ 5V	±10V	-	300mW (Tj)	3 Ohm @ 10mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
STL7NM60N	STMicroelectronics	MOSFET N-CH 600V 5.8A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 14-PowerFLAT? (5x5) Package / Case: 14-PowerVQFN	Package: 14-PowerVQFN	Stock4,560	MOSFET (Metal Oxide)	600V	5.8A (Tc)	10V	4V @ 250µA	14nC @ 10V	363pF @ 50V	±25V	-	68W (Tc)	900 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	14-PowerFLAT? (5x5)	14-PowerVQFN
IXFR58N20	IXYS	MOSFET N-CH 200V 50A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock7,632	MOSFET (Metal Oxide)	200V	50A (Tc)	10V	4V @ 4mA	140nC @ 10V	3600pF @ 25V	±20V	-	300W (Tc)	40 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
SI7194DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,968	MOSFET (Metal Oxide)	25V	60A (Tc)	4.5V, 10V	2.6V @ 250µA	145nC @ 10V	6590pF @ 15V	±20V	-	5.4W (Ta), 83W (Tc)	2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STB5NK50Z-1	STMicroelectronics	MOSFET N-CH 500V 4.4A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock252,000	MOSFET (Metal Oxide)	500V	4.4A (Tc)	10V	4.5V @ 50µA	28nC @ 10V	535pF @ 25V	±30V	-	70W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF7424PBF	Infineon Technologies	MOSFET P-CH 30V 11A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,352	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	110nC @ 10V	4030pF @ 25V	±20V	-	2.5W (Ta)	13.5 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
BSZ120P03NS3GATMA1	Infineon Technologies	MOSFET P-CH 30V 40A TSDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 73µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3360pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,616	MOSFET (Metal Oxide)	30V	11A (Ta), 40A (Tc)	6V, 10V	3.1V @ 73µA	45nC @ 10V	3360pF @ 15V	±25V	-	2.1W (Ta), 52W (Tc)	12 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
STF30N10F7	STMicroelectronics	MOSFET N-CH 100V 35A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 50V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,792	MOSFET (Metal Oxide)	100V	24A (Tc)	10V	4.5V @ 250µA	19nC @ 10V	1270pF @ 50V	20V	-	25W (Tc)	24 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPLU300N04S41R1XTMA1	Infineon Technologies	MOSFET N-CH 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12090pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock20,010	MOSFET (Metal Oxide)	40V	300A (Tc)	10V	4V @ 125µA	151nC @ 10V	12090pF @ 25V	±20V	-	300W (Tc)	1.15 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
SI2337DS-T1-E3	Vishay Siliconix	MOSFET P-CH 80V 2.2A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock237,240	MOSFET (Metal Oxide)	80V	2.2A (Tc)	6V, 10V	4V @ 250µA	17nC @ 10V	500pF @ 40V	±20V	-	760mW (Ta), 2.5W (Tc)	270 mOhm @ 1.2A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
STB42N65M5	STMicroelectronics	MOSFET N-CH 650V 33A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,588	MOSFET (Metal Oxide)	650V	33A (Tc)	10V	5V @ 250µA	100nC @ 10V	4650pF @ 100V	±25V	-	190W (Tc)	79 mOhm @ 16.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHF068N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 16A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Stock2,019	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	5V @ 250µA	77 nC @ 10 V	2628 pF @ 100 V	±30V	-	39W (Tc)	68mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
CPH3307-TL-E	Sanyo	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMNR90-40YSNX	Nexperia USA Inc.	PSMNR90-40YSN/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 320A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10622 pF @ 25 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 268W (Ta) Rds On (Max) @ Id, Vgs: 0.97mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Stock4,500	MOSFET (Metal Oxide)	40 V	320A (Ta)	10V	3.6V @ 1mA	189 nC @ 10 V	10622 pF @ 25 V	±20V	Schottky Diode (Body)	268W (Ta)	0.97mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
NVMFS5A140PLZT3G	onsemi	MOSFET P-CH 40V 20A/140A 5DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	20A (Ta), 140A (Tc)	4.5V, 10V	2.6V @ 1mA	136 nC @ 10 V	7400 pF @ 20 V	±20V	-	3.8W (Ta), 200W (Tc)	4.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
MSC080SMA120B	Microchip Technology	SICFET N-CH 1200V 37A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	37A (Tc)	20V	2.8V @ 1mA	64 nC @ 20 V	838 pF @ 1000 V	+23V, -10V	-	200W (Tc)	100mOhm @ 15A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXTM6N90	IXYS	MOSFET N-CH TO-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6507ENXC7G	Rohm Semiconductor	650V 7A TO-220FM, LOW-NOISE POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock2,994	MOSFET (Metal Oxide)	650 V	7A (Ta)	10V	4V @ 200µA	20 nC @ 10 V	390 pF @ 25 V	±20V	-	46W (Tc)	665mOhm @ 2.4A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
TSM80N1R2CH	Taiwan Semiconductor Corporation	800V, 5.5A, SINGLE N-CHANNEL POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	5.5A (Tc)	10V	4V @ 250µA	19.4 nC @ 10 V	685 pF @ 100 V	±30V	-	110W (Tc)	1.2Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPAK, TO-251AA
IPQC60R040S7XTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	14A (Tc)	12V	4.5V @ 790µA	83 nC @ 12 V	-	±20V	-	272W (Tc)	40mOhm @ 13A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
UF3C120040K4S	Qorvo	SICFET N-CH 1200V 65A TO247-4 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	Package: -	Stock918	SiCFET (Cascode SiCJFET)	1200 V	65A (Tc)	12V	6V @ 10mA	43 nC @ 12 V	1500 pF @ 100 V	±25V	-	429W (Tc)	45mOhm @ 40A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
DMT31M7LSS-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SO-8 T&R 2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5492 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 5.9W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	25A (Ta), 78A (Tc)	4.5V, 10V	3V @ 250µA	84 nC @ 10 V	5492 pF @ 15 V	±20V	-	1.7W (Ta), 5.9W (Tc)	2.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)