Page 1350 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR7843CTRPBF
Infineon Technologies

MOSFET N-CH 30V 161A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock60,480
IPI35CN10N G
Infineon Technologies

MOSFET N-CH 100V 27A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,344
NTD5804NT4G
ON Semiconductor

MOSFET N-CH 40V 69A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock654,648
NTLJD3182FZTAG
ON Semiconductor

MOSFET P-CH 20V 2.2A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock7,072
SI4420DY,518
NXP

MOSFET N-CH 30V SOT96-1

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,608
ZVN0124ZSTOB
Diodes Incorporated

MOSFET N-CH 240V 0.16A TO92-3

Package: E-Line-3

Stock6,544
IRFP264NPBF
Vishay Siliconix

MOSFET N-CH 250V 44A TO-247AC

Package: TO-247-3

Stock9,792
IRFI614G
Vishay Siliconix

MOSFET N-CH 250V 2.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,400
BSC020N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 100A TDSON-8

Package: 8-PowerTDFN

Stock4,912
IXTX17N120L
IXYS

MOSFET N-CH 1200V 17A PLUS247

Package: TO-247-3

Stock6,912
IXTH12N100Q
IXYS

MOSFET N-CH 1000V 12A TO-247

Package: TO-247-3

Stock6,768
APT22F80S
Microsemi Corporation

MOSFET N-CH 800V 22A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,488
DI9405T
Diodes Incorporated

MOSFET P-CH 20V 4.3A 8-SOIC

Package: 8-SMD, Gull Wing

Stock2,192
IXFY5N50P3
IXYS

MOSFET N-CH 500V 5A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,832
PMZ420UNYL
Nexperia USA Inc.

MOSFET N-CH

Package: -

Stock5,904
ZVN4525E6TA
Diodes Incorporated

MOSFET N-CH 250V 230MA SOT-23-6

Package: SOT-23-6

Stock243,276
SIR844DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock4,560
SIHP12N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 12A TO220AB

Package: TO-220-3

Stock15,000
STP15NK50Z
STMicroelectronics

MOSFET N-CH 500V 14A TO-220

Package: TO-220-3

Stock13,896
STFI10NK60Z
STMicroelectronics

MOSFET N-CH 600V 10A I2PAK FP

Package: TO-262-3 Full Pack, I2Pak

Stock6,128

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR7843CTRPBF	Infineon Technologies	MOSFET N-CH 30V 161A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock60,480	MOSFET (Metal Oxide)	30V	161A (Tc)	4.5V, 10V	2.3V @ 250µA	50nC @ 4.5V	4380pF @ 15V	±20V	-	140W (Tc)	3.3 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPI35CN10N G	Infineon Technologies	MOSFET N-CH 100V 27A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 29µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 27A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,344	MOSFET (Metal Oxide)	100V	27A (Tc)	10V	4V @ 29µA	24nC @ 10V	1570pF @ 50V	±20V	-	58W (Tc)	35 mOhm @ 27A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
NTD5804NT4G	ON Semiconductor	MOSFET N-CH 40V 69A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock654,648	MOSFET (Metal Oxide)	40V	69A (Tc)	5V, 10V	3.5V @ 250µA	45nC @ 10V	2850pF @ 25V	±20V	-	71W (Tc)	8.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
NTLJD3182FZTAG	ON Semiconductor	MOSFET P-CH 20V 2.2A 6-WDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock7,072	MOSFET (Metal Oxide)	20V	2.2A (Ta)	1.8V, 4.5V	1V @ 250µA	7.8nC @ 4.5V	450pF @ 10V	±8V	Schottky Diode (Isolated)	710mW (Ta)	100 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
SI4420DY,518	NXP	MOSFET N-CH 30V SOT96-1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,608	MOSFET (Metal Oxide)	30V	-	4.5V, 10V	1V @ 250µA	120nC @ 10V	-	±20V	-	2.5W (Ta)	9 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ZVN0124ZSTOB	Diodes Incorporated	MOSFET N-CH 240V 0.16A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16 Ohm @ 250mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,544	MOSFET (Metal Oxide)	240V	160mA (Ta)	10V	3V @ 1mA	-	85pF @ 25V	±20V	-	-	16 Ohm @ 250mA, 10V	-	Through Hole	E-Line (TO-92 compatible)	E-Line-3
IRFP264NPBF	Vishay Siliconix	MOSFET N-CH 250V 44A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,792	MOSFET (Metal Oxide)	250V	44A (Tc)	10V	4V @ 250µA	210nC @ 10V	3860pF @ 25V	±20V	-	380W (Tc)	60 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFI614G	Vishay Siliconix	MOSFET N-CH 250V 2.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,400	MOSFET (Metal Oxide)	250V	2.1A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	23W (Tc)	2 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
BSC020N03LSGATMA1	Infineon Technologies	MOSFET N-CH 30V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,912	MOSFET (Metal Oxide)	30V	28A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	93nC @ 10V	7200pF @ 15V	±20V	-	2.5W (Ta), 96W (Tc)	2 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IXTX17N120L	IXYS	MOSFET N-CH 1200V 17A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 8.5A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,912	MOSFET (Metal Oxide)	1200V	17A (Tc)	20V	5V @ 250µA	155nC @ 15V	8300pF @ 25V	±30V	-	700W (Tc)	900 mOhm @ 8.5A, 20V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IXTH12N100Q	IXYS	MOSFET N-CH 1000V 12A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock6,768	MOSFET (Metal Oxide)	1000V	12A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
APT22F80S	Microsemi Corporation	MOSFET N-CH 800V 22A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4595pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,488	MOSFET (Metal Oxide)	800V	23A (Tc)	10V	5V @ 1mA	150nC @ 10V	4595pF @ 25V	±30V	-	625W (Tc)	430 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
DI9405T	Diodes Incorporated	MOSFET P-CH 20V 4.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SMD, Gull Wing	Package: 8-SMD, Gull Wing	Stock2,192	MOSFET (Metal Oxide)	20V	4.3A (Ta)	4.5V, 10V	-	40nC @ 10V	1425pF @ 10V	±20V	-	1W (Ta)	100 mOhm @ 2A, 10V	-	Surface Mount	8-SOP	8-SMD, Gull Wing
IXFY5N50P3	IXYS	MOSFET N-CH 500V 5A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 1.65 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,832	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	5V @ 1mA	6.9nC @ 10V	370pF @ 25V	±30V	-	114W (Tc)	1.65 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
PMZ420UNYL	Nexperia USA Inc.	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,904	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ZVN4525E6TA	Diodes Incorporated	MOSFET N-CH 250V 230MA SOT-23-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock243,276	MOSFET (Metal Oxide)	250V	230mA (Ta)	2.4V, 10V	1.8V @ 1mA	3.65nC @ 10V	72pF @ 25V	±40V	-	1.1W (Ta)	8.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
SIR844DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,560	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2.6V @ 250µA	90nC @ 10V	3215pF @ 10V	±20V	-	5W (Ta), 50W (Tc)	2.8 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIHP12N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 12A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock15,000	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	58nC @ 10V	937pF @ 100V	±30V	-	147W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP15NK50Z	STMicroelectronics	MOSFET N-CH 500V 14A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 7A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock13,896	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 100µA	106nC @ 10V	2260pF @ 25V	±30V	-	160W (Tc)	340 mOhm @ 7A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STFI10NK60Z	STMicroelectronics	MOSFET N-CH 600V 10A I2PAK FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAKFP (TO-281) Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock6,128	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4.5V @ 250µA	70nC @ 10V	1370pF @ 25V	±30V	-	35W (Tc)	750 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAKFP (TO-281)	TO-262-3 Full Pack, I2Pak
RFD14N05LSM9A	Fairchild/ON Semiconductor	MOSFET N-CH 50V 14A TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock96,192	MOSFET (Metal Oxide)	50V	14A (Tc)	5V	2V @ 250µA	40nC @ 10V	670pF @ 25V	±10V	-	48W (Tc)	100 mOhm @ 14A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
FDPF33N25T	Fairchild/ON Semiconductor	MOSFET N-CH 250V 33A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2135pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock11,808	MOSFET (Metal Oxide)	250V	33A (Tc)	10V	5V @ 250µA	48nC @ 10V	2135pF @ 25V	±30V	-	37W (Tc)	94 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
ECH8311-TL-H	onsemi	PCH 2.5V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MMFTP3008AK	Diotec Semiconductor	IC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	230mA (Ta)	2.5V, 4.5V	1.6V @ 250µA	0.55 nC @ 4.5 V	31 pF @ 15 V	±8V	-	420mW (Ta)	4.1Ohm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
MCT04P06Y-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	4A	4.5V, 10V	2.5V @ 250µA	4.27 nC @ 4.5 V	505 pF @ 15 V	±20V	-	2W	85mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NDB6030L	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 26A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	52A (Tc)	4.5V, 10V	3V @ 250µA	60 nC @ 10 V	1350 pF @ 15 V	±16V	-	75W (Tc)	13.5mOhm @ 26A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PXP011-20QXJ	Nexperia USA Inc.	PXP011-20QX/SOT8002/MLPAK33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MLPAK33 Package / Case: 8-PowerVDFN	Package: -	Stock8,670	MOSFET (Metal Oxide)	20 V	10.5A (Ta), 56.6A (Tc)	2.5V, 4.5V	1.25V @ 250µA	65.1 nC @ 4.5 V	4200 pF @ 10 V	±12V	-	1.8W (Ta), 50W (Tc)	11.4mOhm @ 10.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN
FDMS86369	onsemi	FET 80V 7.5MOHM PQFN8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (5.2x6.3) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	65A (Tc)	10V	4V @ 250µA	46 nC @ 10 V	2470 pF @ 40 V	±20V	-	107W (Tc)	7.5mOhm @ 65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (5.2x6.3)	8-PowerTDFN