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IPB80N06S407ATMA1
Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,968
IPS04N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A IPAK

Package: TO-251-3 Stub Leads, IPak

Stock4,176
NVB5860NT4G
ON Semiconductor

MOSFET N-CH 60V 169A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,224
SI4836DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,744
2SK3462(TE16L1,NQ)
Toshiba Semiconductor and Storage

MOSFET N-CH 250V 3A PW-MOLD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock13,224
SIR496DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 35A PPAK SO-8

Package: PowerPAK? SO-8

Stock43,200
FQPF6N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 3.3A TO-220F

Package: TO-220-3 Full Pack

Stock6,144
2N7002-7
Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,262,280
IRLR2705PBF
Infineon Technologies

MOSFET N-CH 55V 28A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,424
BSZ180P03NS3GATMA1
Infineon Technologies

MOSFET P-CH 30V 39.6A TSDSON-8

Package: 8-PowerTDFN

Stock6,272
CSD16415Q5T
Texas Instruments

N-CHANNEL NEXFET POWER MOSFET

Package: 8-PowerTDFN

Stock2,688
BUK663R5-55C,118
Nexperia USA Inc.

MOSFET N-CH 55V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,136
NVMFS5C468NLWFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock2,704
NTTFS4C05NTWG
ON Semiconductor

MOSFET N-CH 30V 75A U8FL

Package: 8-PowerWDFN

Stock5,184
STP7NK40ZFP
STMicroelectronics

MOSFET N-CH 400V 5.4A TO-220FP

Package: TO-220-3 Full Pack

Stock83,100
RCX511N25
Rohm Semiconductor

MOSFET N-CH 250V 51A TO220

Package: TO-220-2 Full Pack

Stock9,228
CMLDM8120G TR
Central Semiconductor Corp

MOSFET P-CH 20V 0.86A SOT563

Package: SOT-563, SOT-666

Stock27,648
MIC94052YC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock134,706
SI2318DS-T1-E3
Vishay Siliconix

MOSFET N-CH 40V 3A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,262,316
IXTA42N15T-TRL
IXYS

MOSFET N-CH 150V 42A TO263

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB80N06S407ATMA1	Infineon Technologies	MOSFET N-CH 60V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,968	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 40µA	56nC @ 10V	4500pF @ 25V	±20V	-	79W (Tc)	7.1 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPS04N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,176	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 80µA	41nC @ 5V	5199pF @ 15V	±20V	-	115W (Tc)	4 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Stub Leads, IPak
NVB5860NT4G	ON Semiconductor	MOSFET N-CH 60V 169A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 283W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,224	MOSFET (Metal Oxide)	60V	220A (Tc)	10V	4V @ 250µA	180nC @ 10V	10760pF @ 25V	±20V	-	283W (Tc)	3 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4836DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 17A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,744	MOSFET (Metal Oxide)	12V	17A (Ta)	1.8V, 4.5V	400mV @ 250µA (Min)	75nC @ 4.5V	-	±8V	-	1.6W (Ta)	3 mOhm @ 25A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
2SK3462(TE16L1,NQ)	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 3A PW-MOLD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 267pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock13,224	MOSFET (Metal Oxide)	250V	3A (Ta)	10V	3.5V @ 1mA	12nC @ 10V	267pF @ 10V	±20V	-	20W (Tc)	1.7 Ohm @ 1.5A, 10V	150°C (TJ)	Surface Mount	PW-MOLD	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR496DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock43,200	MOSFET (Metal Oxide)	20V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	42nC @ 10V	1570pF @ 10V	±20V	-	5W (Ta), 27.7W (Tc)	4.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FQPF6N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3.3A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 1.65A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,144	MOSFET (Metal Oxide)	800V	3.3A (Tc)	10V	5V @ 250µA	31nC @ 10V	1500pF @ 25V	±30V	-	51W (Tc)	1.95 Ohm @ 1.65A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
2N7002-7	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,262,280	MOSFET (Metal Oxide)	60V	115mA (Ta)	5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	370mW (Ta)	7.5 Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IRLR2705PBF	Infineon Technologies	MOSFET N-CH 55V 28A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,424	MOSFET (Metal Oxide)	55V	28A (Tc)	4V, 10V	2V @ 250µA	25nC @ 5V	880pF @ 25V	±16V	-	68W (Tc)	40 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ180P03NS3GATMA1	Infineon Technologies	MOSFET P-CH 30V 39.6A TSDSON-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,272	MOSFET (Metal Oxide)	30V	9A (Ta), 39.6A (Tc)	6V, 10V	3.1V @ 48µA	30nC @ 10V	2220pF @ 15V	±25V	-	2.1W (Ta), 40W (Tc)	18 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
CSD16415Q5T	Texas Instruments	N-CHANNEL NEXFET POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 12.5V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,688	MOSFET (Metal Oxide)	25V	100A (Ta)	4.5V, 10V	1.9V @ 250µA	29nC @ 4.5V	4100pF @ 12.5V	+16V, -12V	-	3.2W (Ta)	1.15 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
BUK663R5-55C,118	Nexperia USA Inc.	MOSFET N-CH 55V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 191nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11516pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,136	MOSFET (Metal Oxide)	55V	120A (Tc)	4.5V, 10V	2.8V @ 1mA	191nC @ 10V	11516pF @ 25V	±16V	-	263W (Tc)	3.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C468NLWFT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,704	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	7.3nC @ 10V	570pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	10.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTTFS4C05NTWG	ON Semiconductor	MOSFET N-CH 30V 75A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,184	MOSFET (Metal Oxide)	30V	12A (Ta), 75A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	1988pF @ 15V	±20V	-	820mW (Ta), 33W (Tc)	3.6 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
STP7NK40ZFP	STMicroelectronics	MOSFET N-CH 400V 5.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock83,100	MOSFET (Metal Oxide)	400V	5.4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	535pF @ 25V	±30V	-	25W (Tc)	1 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
RCX511N25	Rohm Semiconductor	MOSFET N-CH 250V 51A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 25.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock9,228	MOSFET (Metal Oxide)	250V	51A (Tc)	10V	5V @ 1mA	120nC @ 10V	7000pF @ 25V	±30V	-	2.23W (Ta), 40W (Tc)	65 mOhm @ 25.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
CMLDM8120G TR	Central Semiconductor Corp	MOSFET P-CH 20V 0.86A SOT563 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock27,648	MOSFET (Metal Oxide)	20V	860mA (Ta)	1.8V, 4.5V	1V @ 250µA	3.56nC @ 4.5V	200pF @ 16V	8V	-	350mW (Ta)	150 mOhm @ 950mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563	SOT-563, SOT-666
MIC94052YC6-TR	Microchip Technology	MOSFET P-CH 6V 2A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock134,706	MOSFET (Metal Oxide)	6V	2A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	-	6V	-	270mW (Ta)	84 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
SI2318DS-T1-E3	Vishay Siliconix	MOSFET N-CH 40V 3A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,262,316	MOSFET (Metal Oxide)	40V	3A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 10V	540pF @ 20V	±20V	-	750mW (Ta)	45 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXTA42N15T-TRL	IXYS	MOSFET N-CH 150V 42A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	42A (Tc)	10V	4.5V @ 250µA	21 nC @ 10 V	1880 pF @ 25 V	±30V	-	200W (Tc)	45mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AOW66616	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 33A/140A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	33A (Ta), 140A (Tc)	6V, 10V	3.4V @ 250µA	60 nC @ 10 V	2870 pF @ 30 V	±20V	-	6.2W (Ta), 125W (Tc)	3.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
G300N04L	Goford Semiconductor	MOSFET N-CH 40V 5A SOT-23-3L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,670	MOSFET (Metal Oxide)	40 V	5A (Tc)	4.5V, 10V	2.5V @ 250µA	10 nC @ 10 V	517 pF @ 20 V	±20V	-	2.1W (Tc)	35mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
100N03A	UMW	TO-252 MOSFETS ROHS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,380	MOSFET (Metal Oxide)	30 V	90A (Tc)	4.5V, 10V	2.5V @ 250µA	41 nC @ 10 V	1963 pF @ 15 V	±20V	-	105W (Tc)	4.9mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
STBGS3D5N06C	onsemi	POWER MOSFET, 60 V, 3.7 M?, 127A FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TP65H050G4QS-TR	Transphorm	650 V 34 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	4.8V @ 700µA	24 nC @ 10 V	1000 pF @ 400 V	±20V	-	119W (Tc)	60mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TOLL	8-PowerSFN
AON7232	Alpha & Omega Semiconductor Inc.	MOSFET N-CHANNEL 100V 37A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	37A (Tc)	4.5V, 10V	2.5V @ 250µA	40 nC @ 10 V	1770 pF @ 50 V	±20V	-	39W (Tc)	13.5mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
APT10045JFLL	Microchip Technology	MOSFET N-CH 1000V 21A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	5V @ 2.5mA	154 nC @ 10 V	4350 pF @ 25 V	-	-	-	460mOhm @ 11.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
AOWF360A70	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 12A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 12A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29.5W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	12A (Tj)	10V	4V @ 250µA	22.5 nC @ 10 V	1360 pF @ 100 V	±20V	-	29.5W (Tc)	360mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Long Leads, I2PAK, TO-262AA