Page 1368 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

FDD5N53TM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 530V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,448
TPCA8012-H(TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A SOP-8 ADV

Package: 8-PowerVDFN

Stock7,216
FQAF17N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 12.2A TO-3PF

Package: SC-94

Stock5,952
FQU6N25TU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 4.4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock5,120
FDD6672A
Fairchild/ON Semiconductor

MOSFET N-CH 30V 65A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock134,520
NTD18N06LT4
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock65,232
STF6NK70Z
STMicroelectronics

MOSFET N-CH 700V 5A TO-220FP

Package: TO-220-3 Full Pack

Stock6,576
NVATS5A304PLZT4G
ON Semiconductor

MOSFET P-CH 30V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,040
PH4840S,115
Nexperia USA Inc.

MOSFET N-CH 40V 94.5A LFPAK

Package: SC-100, SOT-669

Stock6,192
AOTF14N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 14A TO220F

Package: TO-220-3 Full Pack

Stock121,980
RSH125N03TB1
Rohm Semiconductor

MOSFET N-CH 30V 12.5A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,048
NTTFS4C08NTWG
ON Semiconductor

MOSFET N-CH 30V 52A U8FL

Package: 8-PowerWDFN

Stock4,768
STQ2LN60K3-AP
STMicroelectronics

MOSFET N-CH 600V 0.6A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock7,952
PMV30XPEAR
Nexperia USA Inc.

MOSFET P-CH 20V TO-236AB

Package: TO-236-3, SC-59, SOT-23-3

Stock6,576
IXFH36N50P
IXYS

MOSFET N-CH 500V 36A TO-247

Package: TO-247-3

Stock390,000
FQA9P25
Fairchild/ON Semiconductor

MOSFET P-CH 250V 10.5A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,152
IPW65R019C7FKSA1
Infineon Technologies

MOSFET N-CH 650V 75A TO247-3

Package: TO-247-3

Stock11,472
IPB107N20N3 G
Infineon Technologies

MOSFET N-CH 200V 88A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,000
FDMA905P
Fairchild/ON Semiconductor

MOSFET P-CH 12V 6-MLP 2X2

Package: 6-VDFN Exposed Pad

Stock975,348
TK160F10N1-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

Package: -

Stock13,491

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDD5N53TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 530V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 530V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,448	MOSFET (Metal Oxide)	530V	4A (Tc)	10V	5V @ 250µA	15nC @ 10V	640pF @ 25V	±30V	-	40W (Tc)	1.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TPCA8012-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 40A SOP-8 ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3713pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock7,216	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	2.5V @ 1mA	42nC @ 10V	3713pF @ 10V	±20V	-	-	4.9 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
FQAF17N40	Fairchild/ON Semiconductor	MOSFET N-CH 400V 12.2A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock5,952	MOSFET (Metal Oxide)	400V	12.2A (Tc)	10V	5V @ 250µA	60nC @ 10V	2300pF @ 25V	±30V	-	100W (Tc)	270 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
FQU6N25TU	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4.4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock5,120	MOSFET (Metal Oxide)	250V	4.4A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	300pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	1 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDD6672A	Fairchild/ON Semiconductor	MOSFET N-CH 30V 65A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock134,520	MOSFET (Metal Oxide)	30V	65A (Ta)	4.5V, 10V	2V @ 250µA	46nC @ 4.5V	5070pF @ 15V	±12V	-	3.2W (Ta), 70W (Tc)	8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
NTD18N06LT4	ON Semiconductor	MOSFET N-CH 60V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 55W (Tj) Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock65,232	MOSFET (Metal Oxide)	60V	18A (Ta)	5V	2V @ 250µA	22nC @ 5V	675pF @ 25V	±15V	-	2.1W (Ta), 55W (Tj)	65 mOhm @ 9A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF6NK70Z	STMicroelectronics	MOSFET N-CH 700V 5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,576	MOSFET (Metal Oxide)	700V	5A (Tc)	10V	4.5V @ 100µA	47nC @ 10V	930pF @ 25V	±30V	-	30W (Tc)	1.8 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
NVATS5A304PLZT4G	ON Semiconductor	MOSFET P-CH 30V DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 108W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,040	MOSFET (Metal Oxide)	60V	120A (Ta)	4.5V, 10V	2.6V @ 1mA	250nC @ 10V	13000pF @ 20V	±20V	-	108W (Tc)	6.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	ATPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PH4840S,115	Nexperia USA Inc.	MOSFET N-CH 40V 94.5A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 94.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,192	MOSFET (Metal Oxide)	40V	94.5A (Tc)	7V, 10V	3V @ 1mA	67nC @ 10V	3660pF @ 10V	±20V	-	62.5W (Tc)	4.1 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
AOTF14N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 14A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock121,980	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4.5V @ 250µA	51nC @ 10V	2297pF @ 25V	±30V	-	50W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
RSH125N03TB1	Rohm Semiconductor	MOSFET N-CH 30V 12.5A SOP8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,048	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4V, 10V	2.5V @ 1mA	28nC @ 5V	1670pF @ 10V	±20V	-	2W (Ta)	9.1 mOhm @ 12.5A, 10V	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
NTTFS4C08NTWG	ON Semiconductor	MOSFET N-CH 30V 52A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,768	MOSFET (Metal Oxide)	30V	9.3A (Ta)	4.5V, 10V	2.2V @ 250µA	18.2nC @ 10V	1113pF @ 15V	±20V	-	820mW (Ta), 25.5W (Tc)	5.9 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
STQ2LN60K3-AP	STMicroelectronics	MOSFET N-CH 600V 0.6A TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock7,952	MOSFET (Metal Oxide)	600V	600mA (Tc)	10V	4.5V @ 50µA	12nC @ 10V	235pF @ 50V	±30V	-	2.5W (Tc)	4.5 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
PMV30XPEAR	Nexperia USA Inc.	MOSFET P-CH 20V TO-236AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 490mW (Ta), 5.435W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,576	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.25V @ 250µA	17nC @ 4.5V	1465pF @ 10V	±12V	-	490mW (Ta), 5.435W (Tc)	34 mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
IXFH36N50P	IXYS	MOSFET N-CH 500V 36A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock390,000	MOSFET (Metal Oxide)	500V	36A (Tc)	10V	5V @ 4mA	93nC @ 10V	5500pF @ 25V	±30V	-	540W (Tc)	170 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
FQA9P25	Fairchild/ON Semiconductor	MOSFET P-CH 250V 10.5A TO-3P FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 620 mOhm @ 5.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,152	MOSFET (Metal Oxide)	250V	10.5A (Tc)	10V	5V @ 250µA	38nC @ 10V	1180pF @ 25V	±30V	-	150W (Tc)	620 mOhm @ 5.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IPW65R019C7FKSA1	Infineon Technologies	MOSFET N-CH 650V 75A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.92mA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 58.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock11,472	MOSFET (Metal Oxide)	650V	75A (Tc)	10V	4V @ 2.92mA	215nC @ 10V	9900pF @ 400V	±20V	-	446W (Tc)	19 mOhm @ 58.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPB107N20N3 G	Infineon Technologies	MOSFET N-CH 200V 88A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,000	MOSFET (Metal Oxide)	200V	88A (Tc)	10V	4V @ 270µA	87nC @ 10V	7100pF @ 100V	±20V	-	300W (Tc)	10.7 mOhm @ 88A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMA905P	Fairchild/ON Semiconductor	MOSFET P-CH 12V 6-MLP 2X2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 3405pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock975,348	MOSFET (Metal Oxide)	12V	10A (Ta)	1.8V, 4.5V	1V @ 250µA	29nC @ 6V	3405pF @ 6V	±8V	-	2.4W (Ta)	16 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
TK160F10N1-LXGQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 160A TO220SM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-220SM(W) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock13,491	MOSFET (Metal Oxide)	100 V	160A (Ta)	10V	4V @ 1mA	121 nC @ 10 V	8510 pF @ 10 V	±20V	-	375W (Tc)	2.4mOhm @ 80A, 10V	175°C	Surface Mount	TO-220SM(W)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHG17N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 15A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock6,000	MOSFET (Metal Oxide)	800 V	15A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	1260 pF @ 100 V	±30V	-	179W (Tc)	290mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
BSO083N03MSG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	2V @ 250µA	27 nC @ 10 V	2100 pF @ 15 V	±20V	-	1.56W (Ta)	8.3mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
ICE60N330FP	IceMOS Technology	Superjunction MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	3.9V @ 250µA	43 nC @ 10 V	1250 pF @ 25 V	±20V	-	35W (Tc)	330mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack, Isolated Tab
FCPF21N60NT	onsemi	MOSFET N-CH 600V 21A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
IMZA65R050M2HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMP3028LFDEQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6.8A (Ta)	4.5V, 10V	2.4V @ 250µA	33 nC @ 10 V	1860 pF @ 15 V	±20V	-	660mW (Ta)	25mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN
IXFH60N60X3	IXYS	MOSFET ULTRA JCT 600V 60A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Stock3	MOSFET (Metal Oxide)	600 V	60A (Tc)	10V	5V @ 4mA	51 nC @ 10 V	3450 pF @ 25 V	±20V	-	625W (Tc)	51mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
SQ7414AENW-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 18A PPAK1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	18A (Tc)	4.5V, 10V	2.5V @ 250µA	25 nC @ 10 V	1590 pF @ 30 V	±20V	-	62W (Tc)	23mOhm @ 8.7A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8