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Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock6,288 |
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MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 196µA | 275nC @ 10V | 23000pF @ 30V | ±20V | - | 250W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 25V 29A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
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Package: DirectFET? Isometric MX |
Stock3,840 |
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MOSFET (Metal Oxide) | 25V | 29A (Ta), 180A (Tc) | 4.5V, 10V | 2.35V @ 100µA | 51nC @ 4.5V | 4260pF @ 13V | ±20V | - | 2.8W (Ta), 100W (Tc) | 2.1 mOhm @ 29A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 70A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,896 |
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MOSFET (Metal Oxide) | 30V | 23A (Ta), 70A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 58nC @ 10V | 4300pF @ 15V | ±20V | - | 2.7W (Ta), 150W (Tc) | 3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 200V 30A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock5,856 |
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MOSFET (Metal Oxide) | 200V | 30A (Tc) | - | 4V @ 250µA | 38nC @ 10V | 1597pF @ 25V | - | - | 125W (Tc) | 75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi Corporation |
MOSFET P-CH 100V 11A TO-204AA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-204AA
- Package / Case: TO-204AA, TO-3
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Package: TO-204AA, TO-3 |
Stock5,056 |
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MOSFET (Metal Oxide) | 100V | 11A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 360 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA | TO-204AA, TO-3 |
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Microsemi Corporation |
MOSFET N-CH 800V 18A D3PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3757pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 580 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3Pak
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock6,656 |
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MOSFET (Metal Oxide) | 800V | 18A (Tc) | 10V | 5V @ 1mA | 122nC @ 10V | 3757pF @ 25V | ±30V | - | 500W (Tc) | 580 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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ON Semiconductor |
MOSFET P-CH 30V DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 77A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 79.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,288 |
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MOSFET (Metal Oxide) | 40V | 77A (Ta) | 4.5V, 10V | 2.6V @ 1mA | 79.5nC @ 10V | 3850pF @ 20V | ±20V | - | 72W (Tc) | 10.4 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI5060
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 6334pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 3.2W
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: 8-PowerTDFN |
Stock4,224 |
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MOSFET (Metal Oxide) | 12V | 80A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 124nC @ 8V | 6334pF @ 10V | ±8V | - | 3.2W | 6 mOhm @ 15A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 2A SC70-6L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock600,000 |
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MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 4nC @ 4.5V | 320pF @ 10V | ±8V | - | 350mW (Ta) | 62 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 150V 36.8A SO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 69.4W (Tc)
- Rds On (Max) @ Id, Vgs: 23.2 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
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Package: PowerPAK? SO-8 |
Stock5,072 |
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MOSFET (Metal Oxide) | 150V | 36.8A (Tc) | 7.5V, 10V | 4.5V @ 250µA | 31nC @ 10V | 1070pF @ 75V | ±20V | - | 69.4W (Tc) | 23.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
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IXYS |
MOSFET N-CH 800V 32A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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Package: TO-264-3, TO-264AA |
Stock6,048 |
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MOSFET (Metal Oxide) | 800V | 32A (Tc) | 10V | 6.5V @ 4mA | 140nC @ 10V | 6940pF @ 25V | ±30V | - | 1000W (Tc) | 270 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 100V 18.4A 8SO
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 6W (Tc)
- Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock26,496 |
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MOSFET (Metal Oxide) | 100V | 18.4A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 67nC @ 10V | 1970pF @ 50V | ±20V | - | 3W (Ta), 6W (Tc) | 8.8 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock387,756 |
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MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 10V | 1220pF @ 13V | ±20V | - | 50W (Tc) | 11 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N CH 800V 6A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,192 |
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MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 5V @ 100µA | 13.4nC @ 10V | 360pF @ 100V | ±30V | - | 110W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 88A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock17,652 |
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MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | ±20V | - | 300W (Tc) | 10.7 mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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Rohm Semiconductor |
MOSFET NCH 650V 70A TO247N
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V
- Vgs (Max): +22V, -4V
- FET Feature: -
- Power Dissipation (Max): 262W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock24,444 |
|
SiCFET (Silicon Carbide) | 650V | 70A (Tc) | 18V | 5.6V @ 13.3mA | 104nC @ 18V | 1526pF @ 500V | +22V, -4V | - | 262W (Tc) | 39 mOhm @ 27A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Vishay Siliconix |
MOSFET P-CH 150V 2.17A 1212-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
|
Package: PowerPAK? 1212-8 |
Stock25,668 |
|
MOSFET (Metal Oxide) | 150V | 2.17A (Tc) | 6V, 10V | 4.5V @ 250µA | 12nC @ 10V | 510pF @ 25V | ±20V | - | 3.2W (Ta), 12.5W (Tc) | 1.2 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Vishay Siliconix |
N-CHANNEL 100 V (D-S) MOSFET POW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 46.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 13.4A (Ta), 46.4A (Tc) | 7.5V, 10V | 4V @ 250µA | 20 nC @ 10 V | 920 pF @ 50 V | ±25V | - | 4.8W (Ta), 56.8W (Tc) | 8.9mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
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MOSLEADER |
Single P -20V -2.2A SOT-23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI506
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 84.7W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 105A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 44.8 nC @ 10 V | 2479 pF @ 30 V | ±20V | - | 3.3W (Ta), 84.7W (Tc) | 4.1mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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onsemi |
MOSFET N-CH 50V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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MOSFET (Metal Oxide) | 50 V | 75A (Tc) | - | 4V @ 250µA | 115 nC @ 10 V | 3600 pF @ 25 V | - | - | - | 13mOhm @ 40A, 10V | - | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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MOSFET (Metal Oxide) | 30 V | 15A (Ta), 35A (Tc) | - | 2.35V @ 25µA | 12 nC @ 4.5 V | 1160 pF @ 15 V | - | - | - | 8.7mOhm @ 14A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Micro Commercial Co |
N-CHANNEL MOSFET SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.7W
- Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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Package: - |
Stock8,925 |
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MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 1.55V @ 250µA | 5.2 nC @ 10 V | 340 pF @ 30 V | ±20V | - | 1.7W | 100mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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Sanyo |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Nexperia USA Inc. |
PMPB12R5UPE/SOT1220-2/DFN2020M
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020M-6
- Package / Case: 6-UDFN Exposed Pad
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 20 V | 9.4A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 38 nC @ 4.5 V | 2000 pF @ 10 V | ±10V | - | 1.9W (Ta), 12.5W (Tc) | 14.4mOhm @ 9.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020M-6 | 6-UDFN Exposed Pad |
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IXYS |
MOSFET N-CH 250V 120A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7870 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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Package: - |
Stock624 |
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MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 4.5V @ 4mA | 122 nC @ 10 V | 7870 pF @ 25 V | ±20V | - | 520W (Tc) | 12mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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MOSFET (Metal Oxide) | 30 V | 3.9A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 13.4 nC @ 10 V | 563 pF @ 25 V | ±20V | - | 1W | 65mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -3.2A, -60
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Stock17,394 |
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MOSFET (Metal Oxide) | 60 V | 3.2A (Ta) | 4.5V, 10V | - | 15 nC @ 10 V | 1300 pF @ 30 V | ±20V | - | 2W (Ta) | 105mOhm @ 3A, 10V | -55°C ~ 150°C | Surface Mount | SOT-223 | TO-261-4, TO-261AA |